features 1.8-v rated rohs compliant pb-free available si2312ds vishay siliconix document number: 71338 s-50574?rev. e, 04-apr-05 www.vishay.com 1 n-channel 20 -v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) q g (typ) 0.033 @ v gs = 4.5 v 4.9 20 0.040 @ v gs = 2.5 v 4.4 11.2 0.051 @ v gs = 1.8 v 3.9 ordering information: si2312ds-t1 si2312ds-t1?e3 (lead (pb)-free) *marking code si2312ds (c2)* g s d top view 2 3 to-236 (sot-23) 1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 sec steady state unit drain-source voltage v ds 20 v gate-source v oltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d 4.9 3.77 continuous drain current (t j = 150 c) a t a = 70 c i d 3.9 3.0 a pulsed drain current b i dm 15 a avalanche current b l = 0 1 mh i as 15 single avalanche energy l = 0.1 mh e as 11.25 mj continuous source current (diode conduction) a i s 1.0 a power dissipation a t a = 25 c p d 1.25 0.75 w power dissipation a t a = 70 c p d 0.80 0.48 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 75 100 maximum junction-to-ambient a steady state r thja 120 166 c/w maximum junction-to-foot steady state r thjf 40 50 c/w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature
si2312ds vishay siliconix www.vishay.com 2 document number: 71338 s-50574?rev. e, 04-apr-05 specifications (t a = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v( br)dss v gs = 0 v, i d = 250 a 20 v gate-threshold v oltage v gs(th) v ds = v gs , i d = 250 a 0.45 0.65 0.85 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 70 c 75 a on-state drain current a i d(on) v ds 10 v, v gs = 4.5 v 15 a v gs = 4.5 v, i d = 5.0 a 0.027 0.033 drain-source on-resistance a r ds(on) v gs = 2.5 v, i d = 4.5 a 0.033 0.040 so ds(on) v gs = 1.8 v, i d = 4.0 a 0.042 0.051 forward t ransconductance a g fs v ds = 15 v, i d = 5.0 a 40 s diode forward voltage v sd i s = 1.0 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 11.2 14.0 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 5.0 a 1.4 nc gate-drain charge q gd ds gs d 2.2 switching turn-on delay time t d(on) 15 25 rise time t r v dd = 10 v, r l = 10 40 60 turn-off delay time t d(off) v dd = 10 v , r l = 10 i d 1.0 a, v gen = 4.5 v, r g = 6 48 70 ns fall-time t f g 31 45 source-drain reverse recovery time t rr i f = 1.0 a, di/dt = 100 a/ s 13 25 notes a. pulse test: pw 300 s duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 0 3 6 9 12 15 01234 v gs = 4.5 thru 2.0 v t c = 125 c ? 55 c 1.5 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 1.0 v 0.5 v
si2312ds vishay siliconix document number: 71338 s-50574?rev. e, 04-apr-05 www.vishay.com 3 typical characteristics (25 c unless noted) ? on-resistance ( r ds(on) ) 0 300 600 900 1200 1500 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 0 4 8 12 16 20 0.00 0.03 0.06 0.09 0.12 0.15 03691215 v ds ? drain-to-source voltage (v) c oss c iss v ds = 10 v i d = 5.0 a i d ? drain current (a) v gs = 4.5 v i d = 5.0 a v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 02468 i d = 5.0 a 20 1 0.01 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s 0.1 t j = 150 c t j = 25 c v gs = 2.5 v v gs = 4.5 v c rss 10 r ds(on) ? on-resiistance (normalized)
si2312ds vishay siliconix www.vishay.com 4 document number: 71338 s-50574?rev. e, 04-apr-05 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.01 0 1 10 12 4 6 100 600 0.1 single pulse power time (sec) 2 8 power (w) ? 0.4 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 166 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 t a = 25 c vishay siliconix maintains worldw ide manufacturing capability. pr oducts may be manufactured at on e of several q ualified locati ons. reliability data fo r silicon te chnology and package reliability represent a co mposite of all qualifie d locations. for relate d documents such as pa ckage/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?71338 .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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