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BUT12AX silicon diffused power transistor rev. 01 16 june 2004 product data m3d308 1. product pro?le 1.1 description high voltage, high speed, npn power transistor in a plastic package. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information n isolated package n fast switching. n inverters n switching regulators n motor control systems n dc-to-dc converters. n v cesm 1000 v n i c 8a n p tot 23 w n t f 0.8 m s. table 1: pinning - sot186a (to-220f), simpli?ed outline and symbol pin description simpli?ed outline symbol 1 base (b) sot186a (to-220f) 2 collector (c) 3 emitter (e) mb mounting base; isolated mbk110 1 mb 23 3 2 1 mbb008
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 2 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. 3. ordering information 4. limiting values [1] mounted without heatsink compound. table 2: ordering information type number package name description version BUT12AX to-220f plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 leads. sot186a table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cesm peak collector-emitter voltage v be = 0 v - 1000 v v ceo collector-emitter voltage base open circuit - 450 v i c collector current figure 2 and 3 -8a i csat collector saturation current - 5 a i cm peak collector current figure 3 -20a i b base current (dc) - 4 a i bm peak base current - 6 a p tot total power dissipation t h =25 c; figure 1 [1] -23w t stg storage temperature - 65 +150 c t j junction temperature - +150 c
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 3 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. v be = - 1vto - 5 v; t h = 100 c. fig 1. normalized total power dissipation as a function of heatsink temperature. fig 2. reverse bias safe operating area; continuous collector current as a function of collector-emitter voltage. t h =25 c 1 - region of permissible dc operation. 2 - permissible extension for repetitive operation. fig 3. forward bias safe operating area; continuous and peak collector currents as a function of collector-emitter voltage. 03aa13 0 40 80 120 0 50 100 150 200 t h ( c) p der (%) 10 0 400 i c (a) 1200 v ce (v) 0 003aaa454 800 2 4 6 8 p der p tot p tot 25 c () ----------------------- 100 % = 1 10 1 10 2 10 3 v ce (v) 10 10 - 1 10 2 10 - 2 i c (a) i cm i c 003aaa455 2 1
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 4 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. 5. thermal characteristics [1] external heatsink connected to mounting base. 6. characteristics [1] measured with a half-sinewave voltage. [2] turn-off storage time table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-h) thermal resistance from junction to heatsink mounted without heatsink compound [1] - - 5.5 k/w mounted with heatsink compound [1] - - 3.9 k/w r th(j-a) thermal resistance from junction to ambient - 55 - k/w table 5: characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v ceosus collector-emitter sustaining voltage i c = 100 ma; i boff = 0 a; l = 25 mh; figure 9 and 10 400 - - v v cesat collector-emitter saturation voltage i c = 5 a; i b =1a; figure 5 - - 1.5 v v besat base-emitter saturation voltage i c = 5 a; i b =1a; figure 4 - - 1.5 v i ces collector-emitter cut-off current v ce =v cesm ; v be =0v t j =25 c [1] --1ma t j = 125 c [1] --3ma h fe dc current gain v ce =5v; figure 8 i c =10ma 10 18 35 i c = 1 a 10 20 35 dynamic characteristics t on turn-on time i con = 5 a; i bon =i boff =1a; resistive load; figure 11 and 12 --1 m s t s carrier storage time i con = 5 a; i bon =i boff =1a; resistive load; figure 11 and 12 [2] --4 m s i con = 5 a; i bon =1a; v cl = 250 v; t mb = 100 c; inductive load; figure 13 and 14 - 1.9 2.5 m s t f fall time i con = 5 a; i bon =i boff =1a; resistive load; figure 11 and 12 - - 0.8 m s i con = 5 a; i bon = 1 a; v cl = 300 v; t mb = 100 c; inductive load; figure 13 and 14 - 200 300 ns
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 5 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. t j =25 c and 100 ct j =25 c and 100 c fig 4. base-emitter saturation voltage as a function of collector current; typical values. fig 5. collector-emitter saturation voltage as a function of collector current; typical values. t j =25 c fig 6. base-emitter voltage as a function of base current; typical values. fig 7. collector-emitter saturation voltage as a function base current; typical and maximum values. 0 2.0 10 - 1 10 2 1 i c (a) v besat (v) 10 0.5 1.5 1.0 003aaa456 t j = 25 ?c t j = 100 ?c 0 2.0 10 - 1 10 2 1 i c (a) v cesat (v) 10 0.5 1.5 1.0 t j = 25 ?c t j = 100 ?c 003aaa457 3 i b (a) 1.4 0.8 0 v be (v) 1.2 1.0 2 1 003aaa458 i c = 8 a 6 a 3 a 10 -1 10 -1 1 10 1 v cesat (v) i b (a) 10 i c = 3 a 6 a 8 a typ max 003aaa459
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 6 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. v ce =5vand1v fig 8. dc current gain as a function of collector current; typical values. 003aaa460 10 2 10 -2 10 -1 11010 2 10 1 i c (a) h fe v ce = 5 v 1v
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 7 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. fig 9. test circuit for collector-emitter sustaining voltage. fig 10. oscilloscope display for collector-emitter sustaining voltage. v cc = 250 v; t p =20 m s; v im = - 6vto8v; t p /t = 0.01. the values of r b and r l are selected in accordance with i con and i bon requirements. fig 11. test circuit for resistive load switching times fig 12. switching time waveforms with resistive load. + 50 v 100 to 200 w 30 to 60 hz l 6 v oscilloscope vertical horizontal 1 w 300 w 003aaa461 003aaa462 i c (ma) 250 200 100 0 min v ceosus v ce (v) 003aaa463 v cc d.u.t. r l r b v im t p t 0 t 90% 10% 90% 10% i c i b i bon i boff i con t r 30 ns t s t f t on t 003aaa464
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 8 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. 7. isolation characteristics v cl 1000 v; v cc =30v;v be = - 1vto - 5v; l b =1 m h; l c = 200 m h fig 13. test circuit for inductive load switching and reverse bias safe operating area. fig 14. switching time waveforms with inductive load. 003aaa465 + i b - v be l b l c v cc d.u.t. v cl 003aa466 t r 90% 10% i b i bon - i boff i con 90% 10% i c t t t s t off t f table 6: isolation characteristics symbol parameter conditions min. typ. max. unit v isol(rms)m peak rms isolation voltage from all three terminals to external heatsink. f = 50 to 60 hz; sinusoidal waveform; rh 65%; clean and dust-free. - - 2500 v c c-h capacitance from collector to external heatsink. -12-pf
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 9 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. 8. package outline fig 15. sot186a (to-220f). references outline version european projection issue date iec jedec jeita sot186a 3-lead to-220f 0 5 10 mm scale plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead to-220 'full pack' sot186a a a 1 q c k j notes 1. terminal dimensions within this zone are uncontrolled. terminals in this zone are not tinned. 2. both recesses are ? 2.5 0.8 max. depth d d 1 l l 2 l 1 b 1 b 2 e 1 e b w m 1 23 q e p t unit d b 1 d 1 e q q p l c l 2 (1) max. e 1 a 5.08 3 mm 4.6 4.0 a 1 2.9 2.5 b 0.9 0.7 1.1 0.9 b 2 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 e 10.3 9.7 2.54 14.4 13.5 t (2) 2.5 0.4 l 1 3.30 2.79 j 2.7 1.7 k 0.6 0.4 2.6 2.3 3.0 2.6 w 3.2 3.0 dimensions (mm are the original dimensions) 02-03-12 02-04-09 mounting base
philips semiconductors BUT12AX silicon diffused power transistor product data rev. 01 16 june 2004 10 of 12 9397 750 13442 ? koninklijke philips electronics n.v. 2004. all rights reserved. 9. revision history table 7: revision history rev date cpcn description 01 20040616 - product data (9397 750 13442)
9397 750 13442 philips semiconductors BUT12AX silicon diffused power transistor ? koninklijke philips electronics n.v. 2004. all rights reserved. product data rev. 01 16 june 2004 11 of 12 9397 750 13442 philips semiconductors BUT12AX silicon diffused power transistor ? koninklijke philips electronics n.v. 2004. all rights reserved. product data rev. 01 16 june 2004 11 of 12 contact information for additional information, please visit http://www.semiconductors.philips.com . for sales of?ce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com . fax: +31 40 27 24825 10. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 12. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. level data sheet status [1] product status [2][3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004. printed in the netherlands all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 16 june 2004 document order number: 9397 750 13442 contents philips semiconductors BUT12AX silicon diffused power transistor 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 isolation characteristics . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 11 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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