2006-01-24 1 bsp60-BSP62 1 2 3 4 pnp silicon darlington transistor ? high collector current ? low collector-emitter saturation voltage ? complementary types: bsp50...bsp52 (npn) type marking pin configuration package bsp60 bsp61 BSP62 bsp60 bsp61 BSP62 1=b 1=b 1=b 2=c 2=c 2=c 3=e 3=e 3=e 4=c 4=c 4=c - - - - - - sot223 sot223 sot223 maximum ratings parameter symbol value unit collector-emitter voltage bsp60 bsp61 BSP62 v ceo 45 60 80 v collector-base voltage bsp60 bsp61 BSP62 v cbo 60 80 90 emitter-base voltage v ebo 5 collector current i c 1 a peak collector current i cm 2 base current i b 100 ma total power dissipation- t s 124 c p tot 1.5 w junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 17 k/w 1 for calculation of r thja please refer to application note thermal resistance
2006-01-24 2 bsp60-BSP62 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bsp60 i c = 10 ma, i b = 0 , bsp61 i c = 10 ma, i b = 0 , bcp62 v (br)ceo 45 60 80 - - - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 , bsp60 i c = 100 a, i e = 0 , bsp61 i c = 100 a, i e = 0 , BSP62 v (br)cbo 60 80 90 - - - - - - emitter-base breakdown voltage i e = 100 a, i c = 0 v (br)ebo 5 - - collector-emitter cutoff current v ce = v ce0max , v be = 0 i ces - - 10 a emitter-base cutoff current v eb = 4 v, i c = 0 i ebo - - 10 a dc current gain 1) i c = 150 ma, v ce = 10 v i c = 500 ma, v ce = 10 v h fe 1000 2000 - - - - - collector-emitter saturation voltage 1) i c = 500 ma, i b = 0.55 ma i c = 1 a, i b = 1 ma v cesat - - - - 1.3 1.8 v base emitter saturation voltage 1) i c = 500 ma, i b = 0.5 ma i c = 1 a, i b = 1 ma v besat - - - - 1.9 2.2 ac characteristics transition frequency i c = 100 ma, v ce = 5 v, f = 100 mhz f t - 200 - mhz 1 pulse test: t < 300s; d < 2%
2006-01-24 3 bsp60-BSP62 switching time test circuit switching time waveform 10% 0 v 90% 10% - v cc t d r t t on 10% off t t sf t ehn00068 v in out v 90% 90%
2006-01-24 4 bsp60-BSP62 dc current gain h fe = ? ( i c ) v ce = 10 v ehp00667 bsp 60...62 10 10 ma 5 fe 5 10 2 5 10 3 5 10 4 1 10 2 10 3 10 4 c h collector-emitter saturation voltage i c = ? ( v cesat ), i b = parameter ehp00669 bsp 60...62 0 1 v 2 4 ma 10 1 5 ma 10 2 c 5 10 3 v ce sat = 0.5 ma b base-emitter saturation voltage i c = ? ( v besat ), i b = parameter ehp00670 bsp 60...62 10 0 1 v be sat 3 5 2 10 3 2 10 1 5 v ma = 0.5 ma 4 ma c b transition frequency f t = ? ( i c ) v ce = 10 v, f = 100 mhz ehp00668 bsp 60...62 10 10 ma f c 10 mhz 10 t 5 12 3 10 3 2 10 1 5 5
2006-01-24 5 bsp60-BSP62 collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb ) 2 4 6 8 10 12 14 16 18 pf 22 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 150 300 450 600 750 900 1050 1200 1350 mw 1650 p tot permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00273 bsp 60...62 -6 0 10 5 d = 5 10 1 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t external resistance r be = ? ( t a )** v cb = v cemax ** r bemax f or thermal stability ehp00666 bsp 60...62 10 050 ? c r a 150 5 100 be 10 7 6 10 5 5 t ?
2006-01-24 6 bsp60-BSP62 package sot223 package outline foot print marking layout packing reel ?180 mm = 1.000 pieces/reel reel ?330 mm = 4.000 pieces/reel manufacturer date code (year/calendarweek) type code example 2005, june bcp52-16 pin 1 12 3 3 4 0.1 0.0 4 0.5 min. 0.28 0.1 max. 15? max. 6.5 0.2 a 4.6 2.3 0.7 0.1 0.25 m a 1.6 0.1 7 0.3 b 0.25 m 0.2 3.5 b 3.5 1.4 4.8 1.4 1.1 1.2 8 0.3 max. 6.8 7.55 12 1.75 pin 1
2006-01-24 7 bsp60-BSP62 published by infineon technologies ag, 81726 mnchen ? infineon technologies ag 2006. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
