features low saturation voltage, typically v ce(sat) =0.1vati c /i b = 1a/50ma excellent dc current gain characteristics complements the 2sa1797 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6v 3a(dc) 6a(pulse)*1 0.5 2*2 jumction temperature t j 150 storage temperature range t stg -55to+150 *1 single pulse, p w = 10ms *2 40 x 40 x t 0.7mm ceramic board w i c collector current collector power dissipation p c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = 60v 0.1 a emitter cut-off current i ebo v eb =5v 0.1 a collector-base breakdown voltage v (br)cbo i c = 50ua 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma 50 v emitter-base breakdown voltage v (br)ebo i e = 50ua 6 v v ce =2v,i c = 0.5a * 82 270 v ce =2v,i c =1.5a * 45 collector-emitter saturation voltage v ce(sat) i c =1a,i b = 50ma * 0.13 0.35 v transistion frequency f t v ce =2v,i e = -0.5a , f = 100mhz 210 mhz collector output capacitance c ob v cb = 10v , i e = 0 , f = 1mhz 25 pf * measured using pulse current. dc current transfer ratio h fe 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SC4672 smd type ic smd type transistors product specification 4008-318-123
smd type transistors 2SC4672 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 grounded emitter propagation characteristics base to emitter voltage : v (v) be v=-2v ce ta=25 ta=100 ta=-40 collector current : ic (a) 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 5 10 20 50 100 200 500 1000 2000 5000 v=2v ce ta=-40 ta=25 ta=100 collector current : i (a) c dc current gain vs. collector current dc current gain : h fe 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 0.05 1 0.5 0.2 0.1 collector current : i (a) c collector-emitter saturation voltage vs. collector current collector saturation voltage : v (v) ce(sat) ta = 100 ta = 2 5 ta = - 4 0 i/i =20 cb 1000 500 200 collector to emitter voltage : v (v) ce 100 50 safe operating area 20 10 5 2 1 0.5 0.2 0.1 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 5 10 collector current : i (a) c pw=100ms* pw=10ms* pw=1ms* dc ic max. (pulse*) ta=25 * single nonrepetitive pulse electrical characteristics curves h fe classification marking rank p q h fe 82 180 120 270 dk sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type transistors product specification 4008-318-123
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