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this is information on a product in full production. may 2012 doc id 16558 rev 9 1/18 18 2N2222AHR hi-rel 40 v - 0.8 a npn transistor datasheet ? production data features linear gain characteristics hermetic packages escc and jans qualified european preferred part list eppl up to 100 krad(si) low dose rate description the 2N2222AHR is a silicon planar npn transistor specifically designed and housed in hermetic packages for aerospace and hi-rel applications. it is available in the jan qualification system (mil-prf19500 compliance) and in the escc qualification system (escc 5000 compliance). in case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. figure 1. internal schematic diagrami parameter escc jans bv ceo min 40 v 50 v i c (max) 0.8 a h fe at 10 v - 150 ma 100 to-18 lcc-3 3 1 2 lcc-3ub 3 1 2 3 1 2 4 pin 4 in lcc- 3 ub is connected to the metallic lid. table 1. devices summary (1) device qualification agency spec. package radiation level eppl jans2n2222a jans mil-prf-19500/255 lcc- 3 ub -- jansr2n2222a 100 krad - soc2222aub escc 5201/002 lcc- 3 ub -yes soc2222aubxxsw 100 krad yes soc2222a lcc- 3 -yes soc2222axxsw 100 krad yes 2N2222AHR to-18 -- 2n2222asw 100 krad - 1. contact st sales office for information about the specific conditions for products in die form and other jan quality levels www.st.com
content 2N2222AHR 2/18 doc id 16558 rev 9 content 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 jans electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 escc electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2. 3 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.1 data code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2N2222AHR electrical ratings doc id 16558 rev 9 3 /18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 75 v v ceo collector-emitter voltage (i b = 0) for jans devices 50 v collector-emitter voltage (i b = 0) for escc devices 40 v v ebo emitter-base voltage (i c = 0) 6 v i c collector current 0.8 a p tot total dissipation at t amb 25 c escc: to-18 lcc- 3 and lcc- 3 ub lcc- 3 and lcc- 3 ub (1) jans: lcc- 3 ub total dissipation at t case 25 c escc: to-18 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 0.5 0.5 0.7 3 0.5 1.8 w total dissipation at t sp(is) = 25 c jans: lcc- 3 ub 1 w t stg storage temperature -65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data symbol parameter lcc-3 lcc-3ub to-18 unit r thjc thermal resistance junction-case (max) for jans - - c/w thermal resistance junction-case (max) for escc -97 rt hjsp(is) thermal resistance junction-solder pad (infinite sink) (max) for jans 90 - thermal resistance junction-solder pad (infinite sink) (max) for escc -- r thja thermal resistance junction-ambient (max) for jans 3 25 - thermal resistance junction-ambient (max) for escc 3 50 240 (1) 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 3 50 electrical characteristics 2N2222AHR 4/18 doc id 16558 rev 9 2 electrical characteristics jans and escc version of the products are assembled and tested in compliance with the agency specification it is qualified in. the electrical characteristics of each version are provided in dedicated tables. t case = 25 c unless otherwise specified. 2.1 jans electrical characteristics table 4. jans electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 75 v v cb = 60 v v cb = 60 v t amb = 150 c - 10 10 10 a na a i ces collector cut-off current (i e = 0) v ce = 50 v - 50 na i ebo emitter cut-off current (i c = 0) v eb = 6 v v eb = 4 v - 10 10 a na v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 10 ma 50 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma - 0. 3 1 v v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma i c =500ma i b =50ma 0.6 1.2 2 v h fe (1) dc current gain i c = 0.1 ma v ce = 10 v i c = 1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v i c = 10 ma v ce = 10 v t amb = -55 c 50 75 100 100 3 0 3 5 - 3 25 3 00 h fe small signal current gain v ce = 20 v i c = 20 ma f = 100 mhz v ce = 10 v i c =1 ma f = 1 khz 2.5 50 - c obo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf c ibo output capacitance (i e = 0) v eb = 0.5 v 100 khz f 1 mhz -25pf 2N2222AHR electrical characteristics doc id 16558 rev 9 5/18 2.2 escc electrical characteristics t on tu r n - o n t i m e v cc = 3 0 v i c = 150 ma i b1 = 15 ma - 3 5ns t off turn-off time v cc = 3 0 v i c = 150 ma i b1 = -i b2 = 15 ma - 3 00 ns 1. pulsed duration = 3 00 s, duty cycle 2 % table 4. jans electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit table 5. escc electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 60 v v cb = 60 v t amb = 150 c - 10 10 na a i ebo emitter cut-off current (i c = 0) v eb = 3 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 75 - v v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 3 0 ma 40 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 6 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma - 0. 3 v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma 0.87 1.2 v h fe (1) dc current gain i c = 0.1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v i c = 10 ma v ce = 10 v t amb = -55 c 3 5 75 100 40 3 5 - 3 00 h fe small signal current gain v ce = 20 v i c = 20 ma f = 100 mhz 3 -10 c obo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf electrical characteristics 2N2222AHR 6/18 doc id 16558 rev 9 2.3 electrical characteristics (curves) t on tu r n - o n t i m e v cc = 3 0 v i c = 150 ma i b1 = 15 ma - 3 5ns t off turn-off time v cc = 3 0 v i c = 150 ma i b1 = -i b2 = 15 ma - 285 ns 1. pulsed duration = 3 00 s, duty cycle 2 % table 5. escc electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit figure 2. dc current gain figure 3. collector emitter saturation voltage figure 4. base emitter saturation voltage ! - v , f $ ( ? # ? # ? # 6 # % 6 ! - v ? # , f $ ? # ? # h & |