il205at/ 206at/ 207at/ 208at document number 83614 rev. 1.6, 18-apr-05 vishay semiconductors www.vishay.com 1 i179002 1 2 3 4 a k nc nc 8 7 6 5 nc b c e optocoupler, phototransistor ou tput, with base connection in soic-8 package features ? high bv ceo , 70 v isolation test voltage, 3000 v rms industry standard soic-8a surface mountable package compatible with dual wave, vapor phase and ir reflow soldering lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code y din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 description the il205at/ IL206AT/ il207at/ il208at are opti- cally coupled pairs with a gallium arsenide infrared led and a silicon npn phototransistor. signal infor- mation, including a dc leve l, can be transmitted by the device while maintaining a high degree of electri- cal isolation between inpu t and output. this family comes in a standard soic-8a small outline package for surface mounting which makes them ideally suited for high density application with limited space. in addi- tion to eliminating through-hole requirements, this package conforms to standards for surface mounted devices. a specified minimum and maximum ctr allows a narrow tolerance in the electrical design of the adja- cent circuits. the high bv ceo of 70 v gives a higher safety margin compared to the industry standard 30 v. order information available on tape and reel only. for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks il205at ctr 40 - 80 %, soic-8 IL206AT ctr 63 - 125 %, soic-8 il207at ctr 100 - 200 %, soic-8 il208at ctr 160 - 320 %, soic-8 parameter test condition symbol value unit peak reverse voltage v r 6.0 v forward continuous current i f 60 ma power dissipation p diss 90 mw derate linearly from 25 c 1.2 mw/c e3
www.vishay.com 2 document number 83614 rev. 1.6, 18-apr-05 il205at/ 206at/ 207at/ 208at vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 70 v emitter-collector breakdown voltage bv eco 7.0 v collector-base breakdown voltage bv cbo 70 v i cmax dc i cmax dc 50 ma i cmax t < 1.0 ms i cmax 100 ma power dissipation p diss 150 mw derate linearly from 25 c 2.0 mw/c parameter test condition symbol value unit total package dissipation (led + detector) p tot 240 mw derate linearly from 25 c 3.3 mw/c operating temperature t amb - 55 to + 100 c storage temperature t stg - 55 to + 150 c soldering time at 260 c 10 s parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.3 1.5 v reverse current v r = 6.0 v i r 0.1 100 a capacitance v r = 0 v c o 13 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 100 abv ceo 70 v emitter-collector breakdown voltage i e = 100 abv eco 7.0 10 v collector-emitter leakage current v ce = 10 v i ceo 5.0 50 na parameter test condition symbol min ty p. max unit saturation voltage, collector- emitter i c = 2.0 ma, i f = 10 ma v cesat 0.4 v isolation test voltage v iso 3000 v rms equivalent dc, isolation voltage 3535 vdc capacitance (input-output) c io 0.5 pf resistance, input to output r io 100 ?
il205at/ 206at/ 207at/ 208at document number 83614 rev. 1.6, 18-apr-05 vishay semiconductors www.vishay.com 3 current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit current transfer ratio i f = 10 ma, v ce = 5.0 v il205at ctr 40 80 % IL206AT ctr 63 125 % il207at ctr 100 200 % il208at ctr 100 320 % i f = 1.0 ma, v ce = 5.0 v il205at ctr 13 25 % IL206AT ctr 22 40 % il207at ctr 34 60 % il208at ctr 56 95 % parameter test condition symbol min ty p. max unit switching time i c = 2 ma, r l = 100 ? , v cc = 10 v t on , t off 3.0 s figure 1. forward voltage vs. forward current figure 2. normalized non-saturated and saturated ctr ce vs. led current i205at_01 .1 1 10 100 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 v f - forward voltage - v i f - forward current - ma t a = 25c t a = 85c t a = C55c i205at_02 .1 1 10 100 normalized to: v ce =10 v i f =10 ma 1.5 1.0 0.5 0.0 v ce =5v v ce =0.4v i f - led current - ma nctr ce - normalized - ctr ce figure 3. collector-emitter current vs.led current figure 4. normalized collecto r-base photocurrent vs. led current i205at_03 .1 1 10 100 i f - led current - ma i ce - collector-emitter current - ma v ce =0.4v v ce =10v 150 100 50 0 i205at_04 .1 1 10 100 i f - led current - ma ni cb - normalized i cb normalized to: v cb =9.3 v i f =1 ma 100 10 1 .1
www.vishay.com 4 document number 83614 rev. 1.6, 18-apr-05 il205at/ 206at/ 207at/ 208at vishay semiconductors figure 5. normalized collector- base photocurrent vs. led current figure 6. collector-emitter p hotocurrent vs. led current figure 7. collector-emitter p hotocurrent vs. led current i205at_05 .1 1 10 100 i f - led current - ma ni cb - normalized - i cb normalized to: v cb =9.3 v i f =10 ma 10 1 .1 .01 i205at_06 i f - led current - ma i cb - collector-base current - a v cb =9.3 v 1000 100 10 1 .1 .1 1 10 100 i205at_07 t a - ambient temperature - c i ceo - collector-emitter - na 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 v ce =10 v typical figure 8. base current vs. i f and hfe figure 9. typical switching charac teristics vs. base resistance (saturated operation) i205at_08 .1 10 100 1000 i b - base current - a nh fe(sat) normalized saturated h fe v ce =0.4 v 2.0 1.5 1.0 0.5 0.0 50c 25c 25c normalized to: i b =20 a v ce =10 v i205at_09 100 50 10 5 1.0 input: =10m pulse width=100 ms duty cycle=50% base-emitter resistance, r be ( ? ) t o ff t on switching time ( s) 10k 50k 100k 500k 1m i f a
il205at/ 206at/ 207at/ 208at document number 83614 rev. 1.6, 18-apr-05 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) figure 10. switching test circuit i205at_11 v out v cc =5 v r l input t off t r 10% 50% 90% t s t pdoff t pdon t on t r t d output input 10% 50% 90% .036 (.91) .014 (.36) .170 (4.32) .045 (1.14) .260 (6.6) r .010 (.13) .050 (1.27) i178003 40 .240 (6.10) .154 .005 (3.91 .13) .050 (1.27) typ. .016 (.41) .192 .005 (4.88 .13) .004 (.10) .008 (.20) lead coplanarity .0015 (.04) max. .015 .002 (.38 .05) .008 (.20) 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) pin one id .120 .005 (3.05 .13) c l .021 (.53) 5 max. r.010 (.25) max. .020 .004 (.51 .10) 2 plcs. iso method a
www.vishay.com 6 document number 83614 rev. 1.6, 18-apr-05 il205at/ 206at/ 207at/ 208at vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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