2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter MJD45H11 features lead formed for surface mount applications in plastic sleeves fast switching speeds complementary pairs simplifies designs pb?free packages are available absolute maximum ratings ta = 25 parameter symbol rating unit collector-emitter voltage v ceo 80 v emitter-base voltage v eb 5v collector current i c 8a collector current (pulse) i cp 16 a total device dissipation fr-5 board @t a =25 derate above 25 p d 20 0.16 w w/ total device dissipation alumina substrate @t a =25 derate above 25 p d 1.75 0.014 w w/ junction temperature t j 150 storage temperature t stg -55to+150 thermal resistance, junction?to?case r jc 6.25 /w thermal resistance, junction-to-ambient r ja 71.4 /w lead temperature for soldering t l 260 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter sustaining voltage v ceo(sus) i c =30ma,i b =0 80 v collector cutoff current i ces v ce = rated v ceo ,v eb =0 10 a emitter cutoff current i ebo v be =5v,i c =0 50 a collector-emitter saturation voltage v ce( sat) i c =8a,i b =0.4a 1 v base-emitter saturation voltage v be( sat) i c =8a,i b = 0.8 a 1.5 v i c =2a,v ce =1v 60 i c =4a,v ce =1v 40 collector capacitance ccb v cb = 10 v,ftest = 1 mhz 230 pf current-gain-bandwidth product *2 ft i c =0.5a,v ce =10v,f=20mhz 40 mhz delay and rise times t d +t r i c =5a,i b 1 = 0.5 a 135 ns storage time t s i c =5a,i b 1=i b 2 = 0.5 a 500 ns fall time t f i c =5a,i b 1=i b 2 = 0.5 a 100 ns dc current gain h fe marking marking j45h11 MJD45H11 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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