ammp-5618 6C20 ghz general purpose amplifer data sheet description avagos ammp-5618 is a high power, medium gain amplifier that operates from 6 ghz to 20 ghz. the amplifer is designed to be an easy-to-use component for any surface mount pcb application. in communication systems, it can be used as a lo bufer, or as a transmit driver amplifer. during typical operation with a single 5v supply, each gain stage is biased for class-a operation for optimal power output with minimal distortion. the amplifer has integrated 50? i/o match, dc blocking, self-bias and choke to eliminate complex tuning and assembly processes typically required by hybrid (discrete- fet) amplifers. the package is fully smt compatible with backside grounding and i/o to simplify assembly. note: these devices are esd sensitive. the following pre - cautions are strongly recommended. ensure that an esd approved carrier is used when dice are transported from one destination to another. personal grounding is to be worn at all times when handling these devices. features ? 5 x 5 mm surface mount package ? broad band performance 6C20 ghz ? high +19 dbm output power ? medium 13 db typical gain ? 50 input and output match ? single 5v (107 ma) supply bias applications ? microwave radio systems ? satellite vsat ? commercial grade military attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) = 50v esd human body model (class 0) = 150v refer to avago application note a004r: electrostatic discharge damage and control. package diagram functional block diagram 4 3 2 1 5 6 7 8 1 2 3 7 5 6 4 8 rf in nc nc nc rf out nc vd nc pin function 1 nc 2 vd 3 nc 4 rf_out 5 nc 6 nc 7 nc 8 rf_in
2 electrical specifcations 1. small/large -signal data measured in a fully de-embedded test fxture form ta = 25c, vd=5v, idq=107ma. 2. pre-assembly into package performance verifed 100% on-wafer per ammc-5618 published specifcations 3. this fnal package part performance is verifed by a functional test correlated to actual performance at one or more frequencies 4. specifcations are derived from measurements in a 50 test environment. aspects of the amplifer performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. table 1. rf electrical characteristics (t a = 25c, v d = 5.0v, i dq =107 ma, zo=50 ) parameter typ. sigma unit frequency small-signal gain, gain 12 13 0.40 db 5-6 ghz noise figure into 50 ?, nf 4.4 0.2 db output power at 1db gain compression, p1db 19 0.9 dbm third order intercept point; ?f=100mhz; pin=-20dbm, oip3 25 30 1.2 dbm 5-6 ghz input return loss, rlin -12 0.7 db output return loss, rlout -12 0.6 db reverse isolation, isolation -40 1.2 db table 2. recommended operating range 1. ambient operational temperature t a = 25c unless otherwise noted. 2. channel-to-backside thermal resistance (tchannel (tc) = 34c) as measured using infrared microscopy. thermal resistance at backside temperature (tb)= 25c calculated from measured data. description specifcations unit comments min. typical max. drain supply current, id 107 140 ma (vd = 5 v, under any rf power drive and temperature table 3. thermal properties parameter test conditions value thermal resistance, q ch-b backside temperature, t a =25c q ch-b = 34 c/w absolute minimum and maximum ratings table 4. minimum and maximum ratings description specifcations unit comments min. max. positive drain voltage, vd 7 v drain current, id 150 ma rf input power (pin), rfin 20 dbm cw channel temperature, tch +150 c storage temperature, tstg -65 +150 c max. assembly temp, tmax +300 c 30 second maximum notes: 1. operation in excess of any one of these conditions may result in permanent damage to this device.
3 selected performance plots these measurements are in 50 test environment at ta = 25c, vd = 5v, id = 107 ma. aspects of the amplifer per - formance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise (opt) matching. figure 1. gain. frequency (ghz) s21 (db) 4 22 6 8 10 12 14 16 18 20 15 12 9 6 3 0 figure 2. isolation. frequency (ghz) s12 (db) 4 22 6 8 10 12 14 16 18 20 0 -10 -20 -30 -40 -50 figure 3. input return loss. frequency (ghz) s11 (db) 4 22 6 8 10 12 14 16 18 20 0 -5 -10 -15 -20 -25 -30 figure 4. output return loss. frequency (ghz) s22 (db) 4 22 6 8 10 12 14 16 18 20 0 -5 -10 -15 -20 -25 -30 figure 5. noise figure. frequency (ghz) nf (db) 6 20 8 10 12 14 16 18 8 7 6 5 4 3 figure 6. typical power, op-1db and oip3. frequency (ghz) op-1db (dbm) 6 20 8 10 12 14 16 18 35 30 25 20 15 10 5 0 op1db oip3
4 over temperature performance plots these measurements are in 50 test environment at ta = 25c, vd = 5v, id = 107 ma. aspects of the amplifer per - formance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise (opt) matching. figure 7. gain over temperature. frequency (ghz) s21 (db) 4 22 6 8 10 12 14 16 18 20 20 15 10 5 0 -5 25c ?40c ?85c figure 8. isolation over temperature. frequency (ghz) s12 (db) 4 22 6 8 10 12 14 16 18 20 0 -10 -20 -30 -40 -50 -60 25c ?40c ?85c 25c ?40c ?85c figure 9. input rl over temperature. frequency (ghz) s11 (db) 4 22 6 8 10 12 14 16 18 20 0 -5 -10 -15 -20 figure 10. output return loss over temperature. frequency (ghz) s22 (db) 4 22 6 8 10 12 14 16 18 20 0 -5 -10 -15 -20 -25 -30 figure 11. nf over temperature. frequency (ghz) nf (db) 6 20 8 10 12 14 16 18 8 7 6 5 4 3 figure 12. bias current over temperature. vdd (v) idd (ma) 3 5 3.5 4 4.5 108 106 104 102 100 98 96 94 25c ?40c ?85c 25c ?40c ?85c 25c ?40c ?85c
5 over voltage plots these measurements are in 50 test environment at ta = 25c, vd = 5v, id = 107 ma. aspects of the amplifer per - formance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise (opt) matching. figure 13. gain over vdd. frequency (ghz) s21 (db) 4 22 6 8 10 12 14 16 18 20 16 12 8 4 0 3v 4v 5v figure 14. isolation over vdd. frequency (ghz) s12 (db) 4 20 6 8 10 12 14 16 18 0 -10 -20 -30 -40 -50 -60 figure 15. input rl over vdd. frequency (ghz) s11 (db) 4 20 6 8 10 12 14 16 18 0 -5 -10 -15 -20 figure 16. output return loss over vdd. frequency (ghz) s22 (db) 4 20 6 8 10 12 14 16 18 0 -5 -10 -15 -20 -25 -30 -35 figure 17. output power over vdd. frequency (ghz) op-1db (dbm) 6 20 8 10 12 14 16 18 20 16 12 8 4 0 figure 18. oip3 over vdd. frequency (ghz) oip3 (dbm) 6 20 8 10 12 14 16 18 35 30 25 20 15 10 5 0 3v 4v 5v 3v 4v 5v 3v 4v 5v 3v 4v 5v 3v 4v 5v
6 biasing and operation the ammc-5618 is normally biased with a single positive drain supply connected to both v d pins through bypass capacitors as shown in figure 19. the recommended supply voltage is 5v. it is important to have 0.1 f bypass capacitor, and the capacitor should be placed as close to the component as possible. the ammc-5618 does not require a negative gate voltage to bias any of the two stages. no ground wires are needed because all ground connections are made with plated through-holes to the backside of the package. refer to the absolute maximum ratings table for allowed dc and thermal conditions. figure 19. typical application. figure 20. simplifed mmic schematic. figure 21. demonstration board (available upon request). application circuit feedback network feedback network matching matching rf input v d1 v d2 matching rf output v g2 v g1 base gnd rfout rfin vd (typ 5v) 0.1 f 4 3 2 1 5 6 7 8 typical scattering parameters please refer to for typical scattering parameters data.
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2013 avago technologies. all rights reserved. obsoletes 5989-3545en av02-0485en - july 8, 2013 part number ordering information devices part number per container container ammp-5618-blk 10 antistatic bag AMMP-5618-TR1 100 7 reel ammp-5618-tr2 500 7 reel package dimension, pcb layout and tape and reel information please refer to avago technologies application note 5520, amxp-xxxx production assembly process (land pattern a).
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