DMN3200U new prod u c t n-channel enhancement mode field effect transistor features ? low on-resistance ? 90 m @ v gs = 4.5v ? 110 m @ v gs = 2.5v ? 200 m @ v gs = 1.5v ? very low gate threshold voltage ? low input capacitance ? esd protected gate ? fast switching speed ? lead, halogen and antimony free, rohs compliant "green" device (notes 2, 3 and 5) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) sot-23 source gate protection diode gate drain d g s esd protected to 3kv top view e q uivalent circuit top view maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 8 v drain current (note 1) i d 2.2 a pulsed drain current (note 1) i dm 9 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 1) p d 650 mw thermal resistance, junction to ambient r ja 192 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 5 a v gs = 8v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs(th) 0.45 ? 1.0 v v ds = v gs , i d = 250 a v gs = 4.5v, i d = 2.2a v gs = 2.5v, i d = 2a static drain-source on-resistance r ds (on) ? 62 70 150 90 110 200 m v gs = 1.5v, i d = 0.67a forward transfer admittance |y fs | ? 5 ? s v ds =5v, i d = 2.2a diode forward voltage (note 4) v sd ? ? 0.9 v v gs = 0v, i s = 1a dynamic characteristics input capacitance c iss ? 290 ? pf output capacitance c oss ? 66 ? pf reverse transfer capacitance c rss ? 35 ? pf v ds = 10v, v gs = 0v f = 1.0mhz notes: 1. device mounted on fr-4 pcb, on minimum recommended pad layout on 2oz. copper pads. 2. no purposefully added lead. halogen and antimony free. 3. short duration pulse test used to minimize self-heating effect. 4. product manufactured with green moldi ng compound and does not contain halogens or sb 2 o 3 fire retardants. product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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