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? large and small area ? wide performance range ? te coolers and dewars available ? filtered windows for high power available ? standard and custom packages/submounts optoelectronics corp. germanium photodetectors gpd gpd optoelectronics corp. small & large area pn, pin detectors two-color detectors
cc introduction/glossary of terms gpd optoelectronics corp. i ntroduction gpd manufactures a broad range of ge and ingaas photodetectors, as well as si/ge dual detectors to meet the most demanding military and commercial applications. this brochure contains technical specifications for ge pn, pin and dual (si/ge) detectors; other brochures describe ingaas detectors (including extended- wavelength) and apds. custom devices and packages are also available. both germanium and ingaas are sensitive to light in the near-infrared region of the spec- trum. while ingaas detectors offer better noise performance, ge detectors offer signifi- cant cost advantages, particularly where a large detection area is required. in addition, ge detectors have linear response at higher optical input power levels. table of contents glossary of terms 2 operating circuits 3 ge pn detectors 4-5 ge pin detectors 6 two-color detectors 6 package outline drawings 7-12 glossary of terms dark current (i d ) the current through a photodetector when a specified reverse bias is applied under conditions of no incident radiation. shunt resistance (r sh ) the resistance of a photodetector at or near zero bias; shunt resistance values in this catalog are calculated at 10mv reverse bias. maximum reverse voltage (v rm ) the maximum reverse voltage that may be applied without damaging the detector. responsivity (r) the photocurrent output per unit incident radiant power, usually at a specified wavelength. noise equivalent power (nep) the incident radiant power that creates a signal- to-noise ratio of one at the photodetector output. junction capacitance (c j ) the total device capacitance, usually measured at a specified reverse bias and frequency. cutoff frequency (f c ) the frequency at which the responsivity de- creases by 3 db from the dc responsivity value. it can be calculated from the load resistance and the junction capacitance. f c = 1/(2 p r l c j ) 0.01 0.1 1 400 600 800 1000 1200 1400 1600 1800 responsivity vs. wavelength comparison responsivity (a/w) wavelength (nanometers) silicon germanium ingaas 2
gpd optoelectronics corp. operating circuits 3
ge pn detectors vhr series: designed for zero reverse bias applications requiring high shunt resistance. vhs series: designed for zero reverse bias applications. hs series: designed for < 5v reverse bias applications. gm series: designed for high speed applications with reverse bias > 10v. tec series: mounted on a one- or two-stage thermoelectric cooler for low-noise applications. gpd optoelectronics corp. 4 type active dia. (mm.) shunt res. @ v r =10mv (k w ) min. typ. dark current @ v r =v test ( m a max) test reverse bias (volts) max reverse volts capacitance @v r max (pf) nep (pw/ ? hz) cut-off freq. @v r , 50 w r l (mhz) gm2 gm2hs gm2vhs gm2vhr 0.5 sq 30 100 250 550 60 150 350 900 2.0 1.0 0.7 0.5 10 3.0 0.3 0.3 15 5.0 0.5 0.5 27 55 200 250 1.0 0.3 0.2 0.1 120 60 35 30 gm3 gm3hs gm3vhs gm3vhr 0.1 120 350 1500 2000 180 500 2500 3000 1.0 0.3 0.1 0.1 10 3.0 0.3 0.3 15 5.0 0.5 0.5 2.0 6.0 8.0 12 0.3 0.1 0.1 0.1 1500 500 350 250 GM4 GM4hs GM4vhs GM4vhr 0.3 60 250 400 900 80 400 650 1600 1.5 0.4 0.2 0.2 10 3.0 0.3 0.3 15 5.0 0.5 0.5 10 25 60 60 0.6 0.3 0.2 0.15 300 120 80 80 gm5 gm5hs gm5vhs gm5vhr 1.0 20 60 200 330 40 100 280 450 3.0 1.5 0.5 0.5 10 2.0 0.3 0.3 15 3.0 0.5 0.5 65 300 1800 1800 1.5 0.5 0.3 0.3 55 10 2.0 2.0 gm6 gm6hs gm6vhs gm6vhr 2.0 6 30 80 120 12 60 120 200 10 3.0 1.0 1.0 10 2.0 0.3 0.3 15 3.0 0.5 0.5 300 1200 9000 9000 2.0 0.8 0.4 0.4 17 1.0 0.6 0.6 gm7 gm7hs gm7vhs gm7vhr 3.0 4 25 40 65 8 35 65 90 30 4.0 3.0 2.0 5.0 1.0 0.25 0.25 10 3.0 0.5 0.5 800 4000 13000 13000 3.0 1.0 0.6 0.6 4.0 0.7 0.2 0.2 gm8 gm8hs gm8vhs gm8vhr 5.0 2 10 15 20 4 15 20 30 40 15 5 5 3.0 1.0 0.1 0.1 5.0 3.0 0.3 0.3 3000 6000 35000 35000 4.0 2.0 1.0 1.0 1.6 0.5 0.1 0.1 gm10hs 10 sq. 2.0 3.5 50 0.5 1.0 30000 4.0 0.1 gm13hs 13 1.0 2.0 100 0.5 1.0 50000 8.0 0.05 gm5tec1 1.0 300 0.2 5.0 7.0 65 0.4 55 gm8tec2 5.0 60 1.0 1.0 2.0 3000 1.0 1.6
ge pn detectors responsivity of filtered units responsivity of filtered units responsivity of filtered units responsivity of filtered units responsivity of filtered units uniformity of response uniformity of response uniformity of response uniformity of response uniformity of response 0 5 10 15 20 25 0 5 10 15 20 25 30 linearity of response linearity of response linearity of response linearity of response linearity of response photocurrent (ma) photocurrent (ma) photocurrent (ma) photocurrent (ma) photocurrent (ma) input power (mw) input power (mw) input power (mw) input power (mw) input power (mw) h t g n e l e v a w s e i r e s0 5 80 0 3 10 5 5 1 . n i m. p y t. n i m. p y t. n i m. p y t m g0 2 .6 2 .0 6 .5 6 .5 7 .5 8 . s h m g0 2 .6 2 .0 6 .0 7 .5 7 .5 8 . s h v m g0 2 .6 2 .0 6 .0 7 .0 8 .5 8 . r h v m g6 2 .2 3 .0 7 .0 8 .2 8 .7 8 . p e g0 2 .6 2 .0 6 .5 6 .5 7 .5 8 . responsivity vs. wavelength responsivity vs. wavelength responsivity vs. wavelength responsivity vs. wavelength responsivity vs. wavelength electrical specifications optical specifications 0.1 1 10 100 0.01 0.1 1 10 gm8 gm7 gm6 gm5 dark current vs. reverse bias dark current vs. reverse bias dark current vs. reverse bias dark current vs. reverse bias dark current vs. reverse bias dark current (a) dark current (a) dark current (a) dark current (a) dark current (a) reverse bias (v) reverse bias (v) reverse bias (v) reverse bias (v) reverse bias (v) 0.01 0.1 1 10 100 1000 -60 -40 -20 0 20 40 60 80 shunt resistance vs. temperature shunt resistance vs. temperature shunt resistance vs. temperature shunt resistance vs. temperature shunt resistance vs. temperature relative shunt resistance relative shunt resistance relative shunt resistance relative shunt resistance relative shunt resistance temperature ( temperature ( temperature ( temperature ( temperature ( c) c) c) c) c) 5
special options ? high response at short wavelength available ? bnc connectors ? thermoelectric coolers (1- and 2-stage) ? dewars ? neutral density filters ? reflective filters ? ar-coated lenses/windows ? custom devices including arrays ? calibrated spectral response ge pin detector: electrical specifications si/ge two-color detector: electrical specifications e p y t e v i t c a . m a i d ) m m ( h t g n e l e v a w e g n a r ) m n ( k a e p . p s e r ) w / a ( p e n ) z h / w p ( r t n u h s ) k ( x a m e s r e v e r ) v ( s t l o v e g a k a e l t n e r r u c d r a w r o f ) v ( e g a t l o v i h p a m 0 1 = ) i s ( 5 i s 6 m g ) e g ( 5 2 0 0 0 1 - 0 0 4 0 0 8 1 - 0 0 0 1 5 . 0 6 . 0 0 1 x 0 . 1 4 1 - 0 1 x 0 . 1 2 1 - 0 0 0 1 > 0 6 0 3 3 a n 2 a 2 1 . 1 5 4 . 0 ) i s ( 5 i s 7 m g ) e g ( 5 3 0 0 0 1 - 0 0 4 0 0 8 1 - 0 0 0 1 5 . 0 6 . 0 0 1 x 0 . 1 4 1 - 0 1 x 5 . 1 2 1 - 0 0 0 1 > 5 2 0 3 3 a n 2 a 3 1 . 1 5 4 . 0 ) i s ( 5 i s 8 m g ) e g ( 5 5 0 0 0 1 - 0 0 4 0 0 8 1 - 0 0 0 1 5 . 0 6 . 0 0 1 x 0 . 1 4 1 - 0 1 x 0 . 2 2 1 - 0 0 0 1 > 0 1 0 3 5 . 1 a n 2 a 0 1 1 . 1 5 4 . 0 : s r e t e m a r a p l a c i r t c e l e: s r e t e m a r a p l a c i r t c e l e : s r e t e m a r a p l a c i r t c e l e : s r e t e m a r a p l a c i r t c e l e: s r e t e m a r a p l a c i r t c e l e e c n a t s i s e r t n u h s ) . x a m ( e g a t l o v e s r e v e r ) . x a m ( t n e r r u c k r a d ) . p y t ( e c n a t i c a p a c r , b d 3 - h t d i w d n a b l 0 5 = r , e m i t e s i r l 0 5 = ) d r a d n a t s ( e l y t s e s a c r e t e m a i d e v i t c a 0 0 6 p e g0 0 6 p e g 0 0 6 p e g 0 0 6 p e g0 0 6 p e g k 2 v 0 1 a 0 3 f p 0 5 z h m 0 6 . s n 3 5 - o t . m m 2 0 0 7 p e g0 0 7 p e g 0 0 7 p e g 0 0 7 p e g0 0 7 p e g k 1 v 0 1 a 5 5 f p 0 1 1 z h m 5 2 . s n 6 5 - o t . m m 3 0 0 8 p e g0 0 8 p e g 0 0 8 p e g 0 0 8 p e g0 0 8 p e g k 7 . 0 v 0 1 a 0 7 f p 0 5 4 z h m 0 1 . s n 5 1 8 - o t . m m 5 : s n o i t a c i l p p a: s n o i t a c i l p p a : s n o i t a c i l p p a : s n o i t a c i l p p a: s n o i t a c i l p p a s t n e m e r u s a e m r e s a l d e s l u p r i t f y p o c s o r t c e p s d e e p s - h g i h n o i t a t n e m u r t s n i r a d i l 0 20 40 60 80 100 -2024681012 gm series hs series capacitance vs. reverse bias capacitance vs. reverse bias capacitance vs. reverse bias capacitance vs. reverse bias capacitance vs. reverse bias reverse bias (v) reverse bias (v) reverse bias (v) reverse bias (v) reverse bias (v) relative capacitance (%) relative capacitance (%) relative capacitance (%) relative capacitance (%) relative capacitance (%) 6 gpd optoelectronics corp. pin, two-color detectors
to-18 (chip diameter to 2 mm) to-5 (chip diameter to 3 mm) to-8 (5 mm chip) gpd optoelectronics corp. package drawings dimensions in mm (in.) many other packages (including lensed packages) available. 7
package drawings gpd optoelectronics corp. to-9 (chip diameter to 13 mm) dimensions in mm (in.) many other packages (including lensed packages) available. 8 to-18 with lens cap (chip diameter to 2 mm) to-5 with lens cap (chip diameter to 3 mm)
to-8 with tec (chip diameter to 5 mm) 9 package drawings to-5 with tec (chip diameter to 3 mm) dimensions in mm (in.) many other packages (including lensed packages) available. gpd optoelectronics corp.
10 package drawings gm8hscs gm10hscs gm10bnc
gpd optoelectronics corp. st active mount sc active mount fc active mount 11 package drawings
si/ge two-color detector gpd optoelectronics corp. 7 manor parkway salem, nh 03079-2842 tel: (603) 894-6865 fax: (603) 894-6866 e-mail address: sales@gpd-ir.com web site:http://www.gpd-ir.com dimensions in mm (in.) many other packages (including lensed packages) available. gpd optoelectronics corp. (formerly germanium power devices) has been a manufacturer of power transistors and diodes since 1973 and a manufacturer of infrared photodetectors since 1980. gpd offers germanium p-n, p-i-n, apd and ingaas p-i-n high-speed and large area photodetectors for infrared radiation detection and telecommunications applications. gpd can offer you a photodetector that meets your technical and cost requirements. gpd maintains an inspection system in accordance with mil-i-45208. photodiodes are sub- jected to telcordia testing requirements (gr-468-core), mil-std-883 test methods and/or customer specifications. package drawings 0205 fiber-pigtailed detector

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