silicon carbide (sic) schottky diode semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9109 issue 3 page 1 of 4 SML10SIC06YC hermetic metal to-257aa package. semelab?s silicon carbide (sic) schottky diodes exhi bit low forward voltage and superb high temperature per formance. suitable for high-frequency hard switching applicat ions, where system efficiency and reliability are paramou nt. no reverse recovery time due to absence of minority carrier injection. screening options available. absolute maximum ratings (per diode, t c = 25c unless otherwise stated) v r dc reverse voltage 600v v rrm repetitive peak reverse voltage 600v i f dc forward current (t j = 175c) 10a i frm repetitive peak forward current (1) 67a i fsm surge peak forward current (2) 250a p d total power dissipation at 100w derate above 25c 0.5w/c t j junction temperature range -55 to +225c t stg storage temperature range -55 to +225c thermal properties symbols parameters max. units r jc thermal resistance, junction to case 2.0 c/w notes notes notes notes (1) (1)(1) (1) t c = 25 c, t p = 10ms, half sine wave, d = 0.3 (2) (2)(2) (2) t c = 25 c, t p = 10 s
silicon carbide (sic) schottky diode SML10SIC06YC semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9109 issue 3 2 of 4 electrical characteristics (per diode, t c = 25c unless otherwise stated) static characteristics symbols parameters test conditions min. typ. max. units i f = 10a 1.5 1.8 v f forward voltage t j = 175c 2.0 2.4 v v r = 600v 10 50 i r reverse current t j = 175c 20 200 a dynamic characteristics q c total capacitive charge v r = 600v, i f = 10a i/ t = 500a/s 25 nc v r = 1.0v, f = 1.0mhz 480 v r = 200v, f = 1.0mhz 50 c total capacitance v r = 400v, f = 1.0mhz 42 pf
silicon carbide (sic) schottky diode SML10SIC06YC semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9109 issue 3 3 of 4 typical performance over temperature range reverse leakage characteristics of sml10sic06syc 0 0.00001 0.00002 0.00003 0.00004 0.00005 0.00006 0.00007 0.00008 0.00009 0.0001 0 100 200 300 400 500 600 700 800 900 1000 vr reverse voltage (volts reverse current (a) 150 25 100 125 150 175 225 forward characteristic of sml10sic06syc 0 1 2 3 4 5 6 7 0 0.5 1 1.5 2 vf - forward voltage (v) if - forw a rd c urre nt (a ) -55 25 100 125 150 175 225
silicon carbide (sic) schottky diode SML10SIC06YC semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9109 issue 3 4 of 4 SML10SIC06YC equivalent reverse recovery time device i f =500ma, i r = 1a, i rr =250ma -1.400 -1.200 -1.000 -0.800 -0.600 -0.400 -0.200 0.000 0.200 0.400 0.600 0.800 -18 -16 -14 -12 -10 -8 -6 -4 -2 02 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 time (ns) current(a) -55c 0c 25c 50c 100c 150c 200c 225c sic schottky diode, no minority carrier recombination thus zero reverse recovery. recovery time shown is due to a small junction capacitance charge and is independent of junction temperature mechanical data dimensions in mm (inches) 1 2 3 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.67 (0.420) 3.56 (0.140) 3.81 (0.150) 4.83 (0.190) 5.08 (0.200) 1 0 . 4 1 ( 0 . 4 1 0 ) 1 0 . 9 2 ( 0 . 4 3 0 ) 1 3 . 3 8 ( 0 . 5 2 7 ) 1 3 . 6 4 ( 0 . 5 3 7 ) 1 6 . 3 8 ( 0 . 6 4 5 ) 1 6 . 8 9 ( 0 . 6 6 5 ) 0.64 (0.025) 0.89 (0.035) 3.05 (0.120) bsc 2.54 (0.100) bsc dia. 1 2 . 0 7 ( 0 . 5 0 0 ) 1 9 . 0 5 ( 0 . 7 5 0 ) dia. to - 2 57 a a pin 1 ? anode 1 pin 2 ? case / common cathode pin 3 - anode 2 1 2 3 case
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