PMV50UPE 20 v, single p-channel trench mosfet 20 july 2012 product data sheet 1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? 3 kv esd protected ? trench mosfet technology ? low threshold voltage 1.3 applications ? relay driver ? high-side loadswitch ? switching circuits 1.4 quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage - - -20 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c; t 5 s [1] - - -3.7 a static characteristics r dson drain-source on-state resistance v gs = -4.5 v; i d = -3.2 a; t j = 25 c - 50 66 m [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . product specification sales@twtysemi.com 1 of 4 http://www.twtysemi.com
PMV50UPE 20 v, single p-channel trench mosfet 2. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 s source 3 d drain 1 2 3 to-236ab (sot23) 017aaa259 g d s 3. ordering information table 3. ordering information package type number name description version PMV50UPE to-236ab plastic surface-mounted package; 3 leads sot23 4. marking table 4. marking codes type number marking code [1] PMV50UPE %cz [1] % = placeholder for manufacturing site code 5. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - -20 v v gs gate-source voltage t j = 25 c -8 8 v v gs = -4.5 v; t amb = 25 c; t 5 s [1] - -3.7 a v gs = -4.5 v; t amb = 25 c [1] - -3.2 a i d drain current v gs = -4.5 v; t amb = 100 c [1] - -2 a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -12.8 a p tot total power dissipation t amb = 25 c [2] - 500 mw product specification sales@twtysemi.com 2 of 4 http://www.twtysemi.com
PMV50UPE 20 v, single p-channel trench mosfet symbol parameter conditions min max unit [1] - 955 mw t sp = 25 c - 3570 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb = 25 c [1] - -1 a esd maximum rating v esd electrostatic discharge voltage hbm [3] - 3000 v [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [3] measured between all pins. 6. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit [1] - 218 250 k/w [2] - 114 130 k/w r th(j-a) thermal resistance from junction to ambient in free air [3] - 80 92 k/w r th(j-sp) thermal resistance from junction to solder point - 30 35 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 6 cm 2 , t 5 s. 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = -250 a; v gs = 0 v; t j = 25 c -20 - - v v gsth gate-source threshold voltage i d = -250 a; v ds = v gs ; t j = 25 c -0.47 -0.6 -0.9 v v ds = -20 v; v gs = 0 v; t j = 25 c - - -1 a i dss drain leakage current v ds = -20 v; v gs = 0 v; t j = 150 c - - -10 a product specification sales@twtysemi.com 3 of 4 http://www.twtysemi.com
PMV50UPE 20 v, single p-channel trench mosfet symbol parameter conditions min typ max unit v gs = -8 v; v ds = 0 v; t j = 25 c - - 10 a i gss gate leakage current v gs = 8 v; v ds = 0 v; t j = 25 c - - 10 a v gs = -4.5 v; i d = -3.2 a; t j = 25 c - 50 66 m v gs = -4.5 v; i d = -3.2 a; t j = 150 c - 73 96 m v gs = -2.5 v; i d = -2.1 a; t j = 25 c - 57 81 m r dson drain-source on-state resistance v gs = -1.8 v; i d = -2.1 a; t j = 25 c - 70 110 m g fs forward transconductance v ds = -5 v; i d = -3.2 a; t j = 25 c - 18 - s dynamic characteristics q g(tot) total gate charge - 10.5 15.7 nc q gs gate-source charge - 2.2 - nc q gd gate-drain charge v ds = -10 v; i d = -3.2 a; v gs = -4.5 v; t j = 25 c - 2.7 - nc c iss input capacitance - 24 - pf c oss output capacitance - 106 - pf c rss reverse transfer capacitance v ds = -10 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 14.6 - pf t d(on) turn-on delay time - 400 - ns t r rise time - 700 - ns t d(off) turn-off delay time - 2180 - ns t f fall time v ds = -10 v; i d = -3.2 a; v gs = -4.5 v; r g(ext) = 6 ; t j = 25 c - 8800 - ns source-drain diode v sd source-drain voltage i s = -1 a; v gs = 0 v; t j = 25 c - -0.8 -1.2 v product specification sales@twtysemi.com 4 of 4 http://www.twtysemi.com
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