ITR61810 single channel 6-18 ghz 1 watt power amplifier mmic www.iterrac.com r3.1 sept. 15, 2004 doc. 1320 page 1 of 6 iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. description ? 21 db typical small signal gain ? 2.0:1 typical input vswr, 2.5:1 typical output vswr ? 31 dbm output power at 1 db gain compression ? 32 dbm output power at 3 db gain compression ? 22% typical power added efficiency at 1 db gain comp ? chip size: 6.55 mm x 2.67 mm x 0.1 mm features the ITR61810 is a fully monolithic power amplif ier operating over the 6.0 to 18.0 ghz frequency band. the amplifier uses a 0.25 micron pseudomor phic high electron mobility transistor (phemt) process to maximize efficiency and output power. the chip configuration in corporates two stages of reactively combined amplifiers at the output preceded by an input amplif ier stage. this single channel amplifier provides typically, 21 db sma ll signal gain and 31 dbm output power at 1 db gain compression. electrical characteristics (at 25c) 50 system, vd=+8v, quiescent current (idq=600 ma) parameter min typ max unit frequency range 6.0 18.0 ghz small signal gain 15 21 db p1db compression 28 31 dbm p3db compression 30 32 dbm pae at 1db gain comp. 12 22 % parameter min typ max unit input return loss 9.5 db output return loss 7.4 db gate voltage (v g ) 1 -0.4 v gain vs. temp. 0~85c -0.025 db/c absolute ratings parameter symbol value unit positive drain dc voltage v d 8.5 v negative dc voltage v g -2 v simultaneous (v d -v g )v dg +10.5 v rf cw input power (50 source) pin 27 dbm drain current i d 1.2 a storage temperature tstg -55 to +125 c operating base plate temp tc -40 to +85 c thermal resistance (channel to backside) rjc 12 c/w note: 1. typical range of the negative gate voltage is -1 to 0v to set a typical i dq of 600 ma.
ITR61810 single channel 6-18 ghz 1 watt power amplifier mmic www.iterrac.com r3.1 sept. 15, 2004 doc. 1320 page 2 of 6 iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. caution: this is an esd sensitive device chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper moly bdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325c for 15 minutes. die attachment for power devices should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backside of t he chip is gold plated and is used as rf and dc ground. these gaas devices should be handled with care a nd stored in dry nitrogen environment to prevent contamination of bonding surfaces . these are esd sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prev ent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012? long corresponding to a typical 2 mil gap between the chip and the substrate material. application information figure 1 functional block diagram vg vg vd g rf in rf out figure 2 chip layout and bond pad locations (chip size = 6.55mm x 2.67mm x 100m. back of chip is rf and dc ground) ITR61810
ITR61810 single channel 6-18 ghz 1 watt power amplifier mmic www.iterrac.com r3.1 sept. 15, 2004 doc. 1320 page 3 of 6 iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. scope: this application note briefly descri bes the procedure for evaluating t he ITR61810, high efficiency 0.25 m phemt single-channel amplifier. the chip conf iguration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. carrier assembly: the attached drawing shows a recommended off chip bias scheme for the ITR61810. the mmic is mounted on a cu shim or ridge, which in turn blaz ed to cu-mo-cu, or cu-w, or mo carrier with alumina 50-ohm microstrip lines for in/out rf connections and off-chip dc bias components. the drawing shows the placement of components and bond wire connections. the following should be noted: application note (1) 1 mil gold bond wires are used on the carrier assembly. (2) use 3-1 mil gold wires about 25 mils in length for optimum rf performance. (3) v g : gate voltage (negative) input terminal for amplifier stages. for best results, the gate supply should have a source resistance less than 100 ohms. (4) v d : drain voltage (positive) input terminal for amplifier stages. (5) v g and v d on both sides of the mmic must be biased to insure proper operation. (6) bias decoupling capacitors of 0.01 f (multilayer) and 100 pf (single layer) are used on the carrier. (7) close placement of external components is essential to stability. (8) the test fixture may require a pair of 25 f capacitor on the drain and gate(optional) bias terminals to prevent oscillations caused by the test fixture connections. (9) for laboratory testing, use good power supplies. set current limits on supplies to rf drive-up current level. keep supply wire/leads as short as possible and if required use additional bypass capacitors at the fixture terminals. figure 3 recommended application schematic circuit diagram drain supply (v d = +8 v)* gate supply (v g )* rf in rf out ground (back of chip) mmic chip 100pf 10,000pf l bond wire ls 10,000pf 100pf bond wire ls l l l *v g and v d on both sides of the mmic must be biased to insure proper operation.
ITR61810 single channel 6-18 ghz 1 watt power amplifier mmic www.iterrac.com r3.1 sept. 15, 2004 doc. 1320 page 4 of 6 iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. figure 4 recommended assembly and bonding diagram caution:loss of gate voltage (vg) while drain voltage (v d ) is present may damage the amplifier. this amplifier is an esd sensitive device. the following procedure must be followed to properly test the amplifier: step 1: slowly apply gate voltage (typical vpinch-off = -1.5v) to terminal v g . step 2: slowly apply drain voltage at v d (<+5 volts) and monitor drain current ids. adjust negative voltage v g to set the drain current (i dq ) to approximately 600 ma. adjust the drain voltage v g to nominal +8 volts (adjust gate voltage v g , if needed, to maintain the drain current at i dq . recommended procedure for biasing and operation step 3: after the bias condition is established, rf input signal may now be applied at the appropriate frequency band. step 4: follow turn-off sequence: (i) rf input power=off, (ii) v d =off, (iii) v g =off. ITR61810
ITR61810 single channel 6-18 ghz 1 watt power amplifier mmic www.iterrac.com r3.1 sept. 15, 2004 doc. 1320 page 5 of 6 iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. performance data 0 5 10 15 20 25 4 6 8 10 12 14 16 18 20 frequency (ghz) small signal gain v d =8.0v, i dq =600ma 0 5 10 15 20 25 30 4 6 8 101214161820 frequency (db) power added efficiency @ p1db v d =8.0v, i dq =600 ma the above data is derived from fixtured measurements which incl udes 3 parallel, 1 mil diameter, 15 mil long, gold bond wires connected to the rf input and output. the i d @ 1 db compression increases to approximately 1 a. the dc supply should be able to support the required current to achieve the above performance.
ITR61810 single channel 6-18 ghz 1 watt power amplifier mmic www.iterrac.com r3.1 sept. 15, 2004 doc. 1320 page 6 of 6 iterra communications 2400 geng road, ste. 100, palo alto, ca 94303 phone (650) 424-1937 fax(650) 424-1938 this is a production data sheet. se e ?product status definitions? on web site or catalog for product development status. 25 26 27 28 29 30 31 32 33 34 35 4 6 8 101214161820 frequency (ghz) output power @ 1 db compression v d =8.0v, i dq =600ma 40 35 30 25 20 15 10 5 0 4 6 8 101214161820 frequency (ghz) input & output return loss v d =8.0v, i dq = 600ma s11 s22 the above data is derived from fixtured measurements which incl udes 3 parallel, 1 mil diameter, 15 mil long, gold bond wires connected to the rf input and output. the i d @ 1 db compression increases to approximately 1 a. the dc supply should be able to support the required current to achieve the above performance. performance data
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