philips semiconductors product specification thyristors bt258u series logic level general description quick reference data passivated, sensitive gate thyristors symbol parameter max. max. max. unit in a plastic envelope, intended for use in general purpose switching and bt258u- 500r 600r 800r phase control applications. these v drm , repetitive peak off-state 500 600 800 v devices are intended to be interfaced v rrm voltages directly to microcontrollers, logic i t(av) average on-state current 5 5 5 a integrated circuits and other low i t(rms) rms on-state current 8 8 8 a power gate trigger circuits. i tsm non-repetitive peak on-state 75 75 75 a current pinning - sot533 pin configuration symbol pin description number 1 cathode 2 anode 3 gate tab anode limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500r -600r -800r v drm , v rrm repetitive peak off-state - 500 1 600 1 800 v voltages i t(av) average on-state current half sine wave; t mb 111 ?c - 5 a i t(rms) rms on-state current all conduction angles - 8 a i tsm non-repetitive peak half sine wave; t j = 25 ?c prior to on-state current surge t = 10 ms - 75 a t = 8.3 ms - 82 a i 2 ti 2 t for fusing t = 10 ms - 28 a 2 s di t /dt repetitive rate of rise of i tm = 10 a; i g = 50 ma; - 50 a/ m s on-state current after di g /dt = 50 ma/ m s triggering i gm peak gate current - 2 a v gm peak gate voltage - 5 v v rgm peak reverse gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 2 ?c temperature 1 top view mbk915 23 ak g 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/ m s. 2 note: operation above 110?c may require the use of a gate to cathode resistor of 1k w or less. march 1999 1 rev 1.000
philips semiconductors product specification thyristors bt258u series logic level thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance - - 2.0 k/w junction to mounting base r th j-a thermal resistance in free air - 70 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 50 200 m a i l latching current v d = 12 v; i gt = 0.1 a - 0.4 10 ma i h holding current v d = 12 v; i gt = 0.1 a - 0.3 6 ma v t on-state voltage i t = 16 a - 1.3 1.5 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.4 1.5 v v d = v drm(max) ; i t = 0.1 a; t j = 110 ?c 0.1 0.2 - v i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; 50 100 - v/ m s off-state voltage exponential waveform; r gk = 100 w t gt gate controlled turn-on i tm = 10 a; v d = v drm(max) ; i g = 5 ma; - 2 - m s time di g /dt = 0.2 a/ m s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; - 100 - m s turn-off time i tm = 12 a; v r = 24 v; di tm /dt = 10 a/ m s; dv d /dt = 2 v/ m s; r gk = 1 k w march 1999 2 rev 1.000
philips semiconductors product specification thyristors bt258u series logic level fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 111?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0123456 0 1 2 3 4 5 6 7 8 a = 1.57 1.9 2.2 2.8 4 bt150 it(av) / a ptot / w tmb(max) / c 125 123 121 119 117 115 113 111 109 conduction angle form factor degrees 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a bt258 1 10 100 1000 0 40 number of half cycles at 50hz itsm / a 10 20 30 50 60 70 80 t i tsm time i t tj initial = 25 c max 10 100 1000 bt150 10us 100us 1ms 10ms t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t 0.01 0.1 1 10 0 4 8 12 16 20 24 bt150 surge duration / s it(rms) / a -50 0 50 100 150 0 1 2 3 4 5 6 7 8 9 bt258 tmb / c it(rms) / a 111 c -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt151 tj / c vgt(tj) vgt(25 c) march 1999 3 rev 1.000
philips semiconductors product specification thyristors bt258u series logic level fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 5 10 15 20 25 30 typ bt150+ vt / v it / a max tj = 125 c tj = 25 c vo = 0.99 v rs = 0.0325 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s 0.01 0.1 1 10 bt150 tp / s zth j-mb (k/w) t p p t d -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c ih(tj) ih(25 c) 0 50 100 150 1 10 100 1000 tj / c dvd/dt (v/us) rgk = 100 ohms march 1999 4 rev 1.000
philips semiconductors product specification thyristors bt258u series logic level mechanical data dimensions in mm net mass: 1.3 g fig.13. sot533 (to251). pin 2 connected to mounting base. references outline version european projection issue date iec jedec eiaj sot533 99-02-18 to-251 0 2.5 5 mm scale plastic single-ended package (philips version of i-pak); 3 leads (in-line) sot533 unit d e q l c e 1 a 2.285 mm 2.38 2.22 7.28 6.94 a 1 0.89 0.71 b 0.89 0.71 0.56 0.46 e 1 d 1 1.06 0.96 e 6.73 6.47 5.36 5.26 4.57 9.8 9.4 1.00 1.10 dimensions (mm are the original dimensions) d d 1 l 123 mounting base e 1 e q b a e e 1 a 1 c w m march 1999 5 rev 1.000
philips semiconductors product specification thyristors bt258u series logic level definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1999 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. march 1999 6 rev 1.000
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