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?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt 1 1.base 2.collector 3.emitter 1 npn triple diffused planar silicon transistor absolute maximum ratings t c =25 c unless otherwise noted * pulse test : pulse width = 5ms, duty cycle 10% thermal characteristics t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 1200 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 12 v i c collector current (dc) 2 a i cp *collector current (pulse) 4 a i b base current (dc) 1 a i bp *base current (pulse) 2 a p c collector dissipation (t c =25 c) 50 w t j junction temperature 150 c t stg storage temperature - 65 ~ 150 c eas avalanche energy(t j =25 c) 2.5 mj symbol characteristics rating unit r jc thermal resistance junction to case 2.5 c/w r ja junction to ambient 62.5 t l maximun lead temperature for soldering purpose : 1/8? from case for 5 seconds 270 c ksc5502d/ksc5502dt high voltage power switch switching application ? wide safe operating area ? built-in free-wheeling diode ? suitable for electronic ballast application ? small variance in storage time ? two package choices : d-pak or to-220 d-pak to-220 c b e equivalent circuit
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt electrical characteristics t c =25 c unless otherwise noted symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 1200 1350 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 600 750 v bv ebo emitter-base breakdown voltage i e =500 a, i c =0 12 13.7 v i ces collector cut-off current v ces =1200v, v be =0 t c =25 c 100 a t c =125 c 500 i ceo collector cut-off current v ce =600v, i b =0 t c =25 c 100 a t c =125 c 500 i ebo emitter cut-off current v eb =12v, i c =0 t c =25 c10 a h fe dc current gain v ce =1v, i c =0.2a t c =25 c152840 t c =125 c8 18 v ce =1v, i c =1a t c =25 c46.4 t c =125 c3 4.7 v ce =2.5v, i c =0.5a t c =25 c122030 t c =125 c6 12 v ce (sat) collector-emitter saturation voltage i c =0.2a, i b =0.02a t c =25 c0.310.8v t c =125 c0.541.1v i c =0.4a, i b =0.08a t c =25 c0.150.6v t c =125 c0.231.0v i c =1a, i b =0.2a t c =25 c0.401.5v t c =125 c1.33.0v v be (sat) base-emitter saturation voltage i c =0.4a, i b =0.08a t c =25 c0.771.0v t c =125 c0.600.9v i c =1a, i b =0.2a t c =25 c0.831.2v t c =125 c0.701.0v c ib input capacitance v eb =8v, i c =0, f=1mhz 385 500 pf c ob output capacitance v cb =10v, i e =0, f=1mhz 60 100 pf f t current gain bandwidth product i c =0.5a,v ce =10v 11 mhz v f diode forward voltage i f =0.2a t c =25 c0.751.2v t c =125 c0.59 v i f =0.4a t c =25 c0.801.3v t c =125 c0.64 v i f =1a t c =25 c0.91.5v
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt electrical characteristics t c =25 c unless otherwise noted symbol parameter test condition min typ. max. units t fr diode froward recvery time (di/dt=10a/ s) i f =0.2a i f =0.4a i f =1a 650 740 785 ns ns ns v ce (dsat) dynamic saturation voltage i c =0.4a, i b1 =80ma v cc =300v @ 1 s7.2v @ 3 s1.8v i c =1a, i b1 =200ma v cc =300v @ 1 s18v @ 3 s6v resistive load switching (d.c < 10%, pulse width=20s) t on turn on time i c =0.4a, i b1 =80ma i b2 =0.2a, v cc =300v r l = 750 ? t c =25 c 175 350 ns t c =125 c 185 ns t off turn off time t c =25 c2.13.0 s t c =125 c2.6 s t on turn on time i c =1a, i b1 =160ma i b2 =160ma, v cc =300v r l = 300 ? t c =25 c 240 450 ns t c =125 c 310 ns t off turn off time t c =25 c3.75.0 s t c =125 c4.5 s inductive load switching (v cc =15v) t stg storage time i c =0.4a, i b1 =80ma i b2 =0.2a, v z =300v l c =200h t c =25 c1.22.0 s t c =125 c1.5 s t f fall time t c =25 c 90 200 ns t c =125 c65 ns t c cross-over time t c =25 c 185 350 ns t c =125 c 145 ns t stg storage time i c =0.8a, i b1 =160ma i b2 =160ma, v cc =300v l c =200h t c =25 c3.34.5 s t c =125 c3.75 s t f fall time t c =25 c 90 250 ns t c =125 c 160 ns t c cross-over time t c =25 c 300 600 ns t c =125 c 570 ns
?2001 fairchild semiconductor corporation ksc5502d/ksc5502dt rev. a2, august 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. collector-emitter saturation voltage figure 5. typical collector saturation voltage figure 6. base-emitter saturation voltage 01234567 0 1 2 3 1a 900ma 800ma 700ma 600ma 500ma 400ma 300ma i b =100ma 200ma i c [a], collector current v ce [v], collector emitter voltage 1m 10m 100m 1 1 10 100 v ce =1v t j =25 t j =125 h fe , dc current gain i c [a], collector current) 1m 10m 100m 1 0.1 1 10 i c =5i b t j =25 t j =125 v ce(sat) (v), voltage i c (a), collector current 1m 10m 100m 1 0.1 1 10 i c =10i b t j =25 t j =125 v ce(sat) (v), voltage i c (a), collector current 1m 10m 100m 1 0 1 2 t j =25 2.0a 1.5a 1.0a 0.4a i c =0.2a v ce [v], voltage i b [a], base current 1m 10m 100m 1 0.1 1 10 i c =10i b t j =25 t j =125 v be [v], voltage i c [a], collector current
?2001 fairchild semiconductor corporation ksc5502d/ksc5502dt rev. a2, august 2001 typical characteristics (continued) figure 7. base-emitter saturation voltage figure 8. diode forward voltage figure 9. collector output capacitance figure 10. resistive switching time, t on figure 11. resistive switching time, t off figure 12. resistive switching time, t on 1m 10m 100m 1 0.1 1 10 i c =5i b t j =25 t j =125 v be [v], voltage i c [a], collector current 1m 10m 100m 1 0.1 1 10 t j =25 t j =125 v fd [v], voltag e i fd [a], forward current 1 10 100 10 100 1000 f=1mhz c ob c ib capacitance[pf] reverse voltage[v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 i c =5i b1 =2i b2 v cc =300v pw=20us t j =25 t j =125 t on [ns],time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 1 1 1.5 2 2.5 3 3.5 4 4.5 5 i c =5i b1 =2i b2 v cc =300v pw=20us t j =25 t j =125 t on (us),time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 i c =5i b1 =5i b2 v c =300v pw=20us t j =25 t j =125 t on (ns),time i c [a], collector current
?2001 fairchild semiconductor corporation ksc5502d/ksc5502dt rev. a2, august 2001 typical characteristics (continued) figure 13. resistive switching time, t off figure 14. inductive switching time, t stg figure 15. inductive switching time, t f figure 16. inductive switching time, t c figure 17. inductive switching time, t stg figure 18. inductive switching time, t f 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 i c =5i b1 =5i b2 v c =300v pw=20us t j =25 t j =125 t on (us),time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 1 1 1.5 2 2.5 3 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t stg (us),time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 40 45 50 55 60 65 70 75 80 85 90 95 100 50 100 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t f (ns),time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 150 200 250 300 350 400 450 500 550 600 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t c [ns],time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 2 2.5 3 3.5 4 4.5 5 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t stg [us],tim e i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 50 60 70 80 90 100 100 200 300 400 500 600 700 800 900 1000 1000 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t f [ns],time i c [a], collector current
?2001 fairchild semiconductor corporation ksc5502d/ksc5502dt rev. a2, august 2001 typical characteristics (continued) figure 19. inductive switching time, t c figure 20. inductive switching time, t stg figure 21. inductive switching time, t f figure 22. inductive switching time, t c figure 23. forward bias safe operating area figure 24. power derating 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t stg [ns],time i c [a], collector current 4 5 6 7 8 9 10 11 12 13 14 1 2 i c =2i b2 v cc =15v v z =300v l c =200uh i c =0.4a i c =0.8a t j =25 t j =125 t stg , time[us] h fe , forced gain 4567891011121314 40 60 80 i c =2i b2 v cc =15v v z =300v l c =200uh i c =0.4a i c =0.8a t j =25 t j =125 t f , time[ns] h fe , forced gain 4 5 6 7 8 9 10 11 12 13 14 80 120 160 200 i c =2i b2 v cc =15v v z =300v l c =200uh i c =0.4a i c =0.8a t j =25 t j =125 t c , time[ns] h fe , forced gain 10 100 1000 0.01 0.1 1 10 t c =25 50us 1ms 5ms dc i c [a], collector current v ce [a], collector emitter voltage 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 p c [w ], pow er dissipation t c ( ), case temperature
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt typical characteristics (continued) figure 25. forward bias safe operating area figure 26. power derating 10 100 1000 0.01 0.1 1 10 t c =25 50us 1ms 5ms dc i c [a], collector current v ce [a], collector emitter voltage 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 p c [w ], pow er dissipation t c ( ), case temperature
4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 package demensions ?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt dimensions in millimeters
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt dimensions in millimeters package demensions (continued) 6.60 0.20 2.30 0.10 0.50 0.10 5.34 0.30 0.70 0.20 0.60 0.20 0.80 0.20 9.50 0.30 6.10 0.20 2.70 0.20 9.50 0.30 6.10 0.20 2.70 0.20 min0.55 0.76 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 0.76 0.10 (5.34) (1.50) (2xr0.25) (5.04) 0.89 0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 0.10 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) d-pak
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h3 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
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