inchange semiconductor isc product specification isc silicon npn power transistor 2SD2047 description high breakdown voltage- : v cbo = 1500v (min) high speed switching applications color tv horizontal deflection output color display horizontal deflection output absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 10 v i c collector current- continuous 5 a i cp collector current-pulse 10 a i b b base current- continuous 3 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.55 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD2047 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 700 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 1500 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 4.5a; i b = 2.0a 2.0 v v be (sat) base-emitter saturation voltage i c = 4.5a; i b = 2.0a 1.5 v v cb = 750v ; i e = 0 50 a i cbo collector cutoff current v cb = 1500v ; i e = 0 1.0 ma h fe dc current gain i c = 1a ; v ce = 5v 18 50 switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i c = 2.5a, i b1 = 0.25a; i b2 = -0.5a 0.5 s isc website www.iscsemi.cn 2
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