1.2v drive nch mosfet RUB002N02 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) high speed switing. 2) small package(vmn3). 3) ultra low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code t2cl basic ordering unit (pieces) 8000 RUB002N02 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 20 v gate-source voltage v gss ? 8v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s 125 ma pulsed i sp 800 ma power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a recommended land. parameter type source current (body diode) drain current parameter vmn3 0.22 0.8 0.1 1.0 0.1 0.16 0.6 0.35 (1) (2) (3) 0.37 0.17 *2 *1 *1 * *2 *1 *1 abbreviated symbol : qr (1) gate (2) source (3) drain ?1 esd protection diode ?2 body diode ?2 ?1 (3) (1) (2) 1/6 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RUB002N02 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 20 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =20v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds =10v, i d =1ma - 0.7 1.0 i d =200ma, v gs =4v - 0.8 1.2 i d =200ma, v gs =2.5v - 1.0 1.4 i d =200ma, v gs =1.8v - 1.2 2.4 i d =40ma, v gs =1.5v - 1.6 4.8 i d =20ma, v gs =1.2v forward transfer admittance l y fs l 0.2 - - s i d =200ma, v ds =10v input capacitance c iss - 25 - pf v ds =10v output capacitance c oss - 10 - pf v gs =0v reverse transfer capacitance c rss - 10 - pf f=1mhz turn-on delay time t d(on) -5-nsi d =150ma, v dd 10v rise time t r - 10 - ns v gs =4v turn-off delay time t d(off) - 15 - ns r l =67 ? fall time t f - 10 - ns r g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =200ma, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) ? * * * * * * * * * * * 2/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RUB002N02 ? electrical characteristic curves (ta=25 ? c) 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 v gs = 1.2v v gs = 4.0v v gs = 2.5v v gs = 1.8v v gs = 1.3v v gs = 1.5v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 v gs = 1.5v ta=25 c pulsed v gs = 1.3v v gs = 2.5v v gs = 1.8v v gs = 1.2v fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 100 1000 10000 0.001 0.01 0.1 1 ta= 25 c pulsed v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.0v fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 1 v gs = 4.0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 1 v gs = 2.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 3/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RUB002N02 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.8v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.8 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.2v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.9 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 0.1 1 0.01 0.1 1 v ds = 10v pulsed ta= - 25 c ta=25 c ta=75 c ta=125 c fig.10 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0 0.5 1 1.5 2 2.5 0 2 4 6 8 ta=25 c pulsed i d = 0.02a i d = 0.2a fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds (on)[ ? ] gate - source voltage : v gs [v] 4/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RUB002N02 5/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RUB002N02 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.1-1 switching time measurement circuit fig.1-2 switching waveforms 6/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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