point light source led chip gaasp/gaas 1. material substrate gaas (n type) epitaxial layer gaasp (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side aluminum alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics f orward voltag e v f 1.75 1.9 v if=10ma reverse voltag e v r 5 v ir=10ua brightness iv 25 mcd if=20ma d 650 nm if=10ma ? 35 nm if=10ma note : brightness is measured by sorter e/t system with bare chip. 4. mechanical data (a) emission area ---------------------- - 5.1mil x 5.1mil (b) bottom area ---------------------- - ####### ##### (c) bonding pad ---------------------- - 115um (d) chip thickness ---------------------- - 11mil eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA6530S1 wavelength auk corp. p side electrode n side electrode
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