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1/11 www.dynexsemi.com dcr1574sy / DCR1574SV dcr1574sy / DCR1574SV phase control thyristor replaces july 2001 version, ds4400-4.0 ds4400-5.5 november 2002 package outline key parameters v drm 2800v i t(av) 3419a i tsm 54500a dvdt 1000v/ s di/dt 300a/ s see package details for further information. fig. 1 package outline outline type code: y outline type code: v voltage ratings ordering information when ordering select the required part number shown in the voltage ratings selection table. for example: dcr1574sy28 for a 2800v 'y' outline variant or DCR1574SV28 for a 2800v 'v' outline variant if a lower voltage grade is required, then use v drm /100 for the grade required e.g.: dcr1574sy 26 for a 2600v 'y' outline variant etc. note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. dcr1574sy28 or DCR1574SV28 conditions t vj = 0? to 125?c. i drm = i rrm = 300ma. v drm , v rrm = 10ms 1/2 sine. v dsm & v rsm = v drm & v rrm + 100v respectively. lower voltage grades available. part number repetitive peak voltages v drm v rrm v 2800 2800
2/11 www.dynexsemi.com dcr1574sy / DCR1574SV current ratings t case = 80?c unless stated otherwise symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load 2667 a - 4189 a - 3680 a half wave resistive load 1680 a - 2640 a - 2140 a current ratings t case = 60?c unless stated otherwise symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load 3419 a - 5370 a - 4836 a half wave resistive load 2197 a - 3451 a - 2857 a
3/11 www.dynexsemi.com dcr1574sy / DCR1574SV surge ratings conditions 10ms half sine; t case = 125 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 125 o c v r = 0 max. units symbol parameter i tsm surge (non-repetitive) on-state current i 2 ti 2 t for fusing i tsm surge (non-repetitive) on-state current i 2 t i 2 t for fusing 14.85 x 10 6 a 2 s 54.5 ka 9.59 x 10 6 a 2 s 43.8 ka thermal and mechanical data dc conditions min. max. units o c/w - 0.019 anode dc clamping force 50kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.002 double side - 125 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) single side - thermal resistance - junction to case r th(j-c) single side cooled symbol parameter clamping force 45 55 kn ?5 150 o c - on-state (conducting) - 135 o c - 0.004 o c/w o c/w cathode dc - 0.019 o c/w double side cooled - 0.0095 o c/w
4/11 www.dynexsemi.com dcr1574sy / DCR1574SV dynamic characteristics parameter symbol conditions max. units i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 o c from 67% v drm to 1000a gate source 20v, 10 ? t r 0.5 s, t j = 125 o c dv/dt maximum linear rate of rise of off-state voltage to 67% v drm t j = 125 o c. 300 ma 1000 v/ s repetitive 50hz 250 a/ s non-repetitive 500 a/ s rate of rise of on-state current di/dt v t(to) threshold voltage at t vj = 125 o c r t on-state slope resistance at t vj = 125 o c t gd delay time 0.883 v 0.11 m ? 2 s v d = 67% v drm , gate source 30v, 15 ? , t r 0.5 s, t j = 25 o c gate trigger characteristics and ratings v drm = 5v, t case = 25 o c conditions parameter symbol v gt gate trigger voltage v drm = 5v, t case = 25 o c i gt gate trigger current v gd gate non-trigger voltage at v drm t case = 125 o c v fgm peak forward gate voltage anode positive with respect to cathode v fgn peak forward gate voltage anode negative with respect to cathode v rgm peak reverse gate voltage i fgm peak forward gate current anode positive with respect to cathode p gm peak gate power see figs. 7 and 8, gate characteristics table p g(av) mean gate power 3.0 v 300 ma 0.25 v 30 v 0.25 v 5v 30 a 150 w 10 w max. units i t = 4000a, t p = 3ms, t j = 125?c, v rm = 200v, di rr /dt = 6a/ s, v dr = 67% v drm , dv dr /dt = 20v/ s linear s 400 turn-off time t q i l latching current t j = 25 o c, v d = 5v i h holding current t j = 25 o c, r g - k = 1000 ma 300 ma
5/11 www.dynexsemi.com dcr1574sy / DCR1574SV curves fig.2 maximum (limit) on-state characteristics fig.3 maximum (limit) on-state characteristics v tm equation: v tm(max) = a + bin (i t ) + c.i t + d. i t where a = 1.328994 b = ?.1381631 c = 3.565973 x 10 ? d = 0.01786171 these values are valid for t j = 125?c for i t 500a to 6000a 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 min max instantaneous on-state voltage, v t - (v) instantaneous on-state current, i t - (a) measured under pulse conditions t j = 125 ? c 0 500 1000 1500 2000 2500 3000 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 min max instantaneous on-state voltage, v t - (v) instantaneous on-state current, i t - (a) measured under pulse conditions t j = 125 ? c
6/11 www.dynexsemi.com dcr1574sy / DCR1574SV fig.4 sine wave power dissipation curves fig.5 sine wave power dissipation curves fig.6 square wave power dissipation curves fig.7 square wave power dissipation curves 0 1000 2000 3000 4000 5000 6000 7000 0 500 1000 1500 2000 2500 3000 3500 4000 mean on-state current, i t(av) - (a) power loss - (w) 180 120 90 60 30 15 conduction angle 0 400 800 1200 1600 2000 2400 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) power loss - (w) 180 120 90 60 30 15 conduction angle 0 1000 2000 3000 4000 5000 6000 7000 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) power loss - (w) d.c. 180 120 90 60 30 conduction angle 0 400 800 1200 1600 2000 2400 0 500 1000 1500 2000 2500 mean on-state current, i t(av) - (a) power loss - (w) d.c. 180 120 90 60 30 conduction angle
7/11 www.dynexsemi.com dcr1574sy / DCR1574SV fig.7 gate characteristics fig.8 gate characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) t j = 125 c t j = 25 c t j = -40 c pulse width s 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - frequency hz table gives pulse power p gm in watts preferred gate drive area upper limit lower limit 0 2 4 6 8 10 12 0246810 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) 2w 5w 10w 20w 50w upper limit lower limit
8/11 www.dynexsemi.com dcr1574sy / DCR1574SV 10 1 0.1 0.01 0.001 time - (s) 0.1 0.01 0.001 0.0001 thermal impedance - (?c/w) double side cooled anode side cooled 100 conduction d.c. halfwave 3 phase 120 ? 6 phase 60 ? effective thermal resistance junction to case ? c/w double side 0.0095 0.0105 0.0112 0.0139 anode side 0.019 0.020 0.0207 0.0234 fig.12 surge (non-repetitive) on-state current vs time (with 50% v rrm at t case = 125?c) fig.11 maximum (limit) transient thermal impedance - junction to case 110 5 10 1 50 cycles at 50hz ms duration 0 25 50 75 peak half sinewave on-state current - (ka) 100 2 3 0 1 4 i 2 t value - (a 2 s x 10 6 ) 5 6 7 8 9 10 i 2 t i 2 t = 2 x t 2 fig.10 reverse recovery current fig.9 stored charge 100 1000 10000 100000 0.1 100 110 rate of decay of on-state current di/dt - (a/s) stored charge, q s - (c) i rr q s i t di/dt conditions: i t = 4000a, v r = 600v, t j = 125 ? c, t p = 3ms q s is the total integral stored charge max. 10 100 1000 10000 0.1 100 110 rate of decay of on-state current di/dt - (a/s) peak reverse recovery current, i rr - (a) conditions: i t = 4000a, v r = 600v, t j = 125 ? c, t p = 3ms max.
9/11 www.dynexsemi.com dcr1574sy / DCR1574SV package details for further package information, please contact customer service. all dimensions in mm, unless stated otherwise. do not scale. hole 3.6 x 2.0 deep (one in each electrode) 37.7 36.0 1.5 cathode gate anode 73 nom 112.5 max 73 nom nominal weight: 1600g clamping force: 50kn 10% lead length: 420mm lead terminal connector: m4 ring package outine type code: y cathode tab fig.12 package details
10/11 www.dynexsemi.com dcr1574sy / DCR1574SV for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale . 2 holes 3.6 x 2.0 deep (in both electrodes) 73 nom cathode gate anode 27.0 25.4 cathode tab 73 nom 112.5 max 1.5 nominal weight: 1100g clamping force: 50kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: v fig.12 package details
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.

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