smd type ic www.kexin.com.cn 1 smd type transistors 30v complementary powertrench mosfet KI4542DY features n-channel 6a,30v r ds(on) = 28m @v gs = 10v r ds(on) = 35m @v gs =4.5v p-channel -6 a, -30 v r ds(on) = 32m @v gs =- 10 v r ds(on) = 45m @v gs =-4.5v absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage v dss 30 -30 v gate to source voltage v gs 20 20 v drain current continuous (note 1a) 6 -6 a drain current pulsed 20 -20 a power dissipation for single operation p d w power dissipation for single operation (note 1a) (note 1b) (note 1c) operating and storage temperature t j ,t stg thermal resistance junction to ambient (note 1a) r ja /w thermal resistance junction to case (note 1) r jc /w -55to175 78 40 2 i d 1.6 p d w 1.2 1
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit v gs =0v,i d = 250 a n-ch 30 v gs =0v,i d = -250 a p-ch -30 i d = 250 a, referenced to 25 n-ch 23 i d = -250 a, referenced to 25 p-ch -21 v ds = 24v, v gs =0v n-ch 1 v ds =-24v,v gs =0v p-ch -1 v gs = 20v, v ds =0v n-ch 100 v gs = 20 v, v ds =0v p-ch 100 v ds =v gs ,i d = 250 a n-ch 1 1.5 3 v ds =v gs ,i d = -250 a p-ch -1 -1.7 -3 i d = 250 a, referenced to 25 n-ch -4 i d = -250 a, referenced to 25 p-ch 4 v gs =10v,i d =6a 19 28 v gs =10v,i d =6a,t j =125 32 48 v gs =4.5v,i d =5a 25 35 v gs =-10v,i d =-6 a 21 32 v gs =-10v,i d =-5 a,t j =125 29 51 v gs =-4.5v,i d =-5a 30 45 v gs =10v,v ds =5v n-ch 20 v gs =-10v,v ds =-5v p-ch -20 v ds = 15v, i d =6a n-ch 18 v ds = -10v, i d = -6a p-ch 16 n-channel n-ch 830 v ds =15v,v gs = 0 v,f = 1.0 mhz p-ch 1540 n-ch 185 p-channel p-ch 400 v ds =-15v,v gs = 0 v,f = 1.0 mhz n-ch 80 p-ch 170 n-channel n-ch 6 12 v dd =15v,i d = 1 a, p-ch 13 24 v gs =10v,r gen =6 (note 2) n-ch 10 18 p-ch 22 35 p-channel n-ch 18 29 v dd =-15v,i d =-1a, p-ch 47 75 v gs =-10v,r gen =6 (note 2) n-ch 5 12 p-ch 18 30 n-channel n-ch 9 13 v ds =15v,i d =7.5a,v gs =5v(note 2) p-ch 15 20 n-ch 2.8 p-channel p-ch 4 v ds =-10v,i d =-6a,v gs =-5v(note 2) n-ch 3.1 p-ch 5 v gs(th) gate threshold voltage n-ch b vdss drain-source breakdown voltage breakdown voltage temperature coefficient gate-body leakage i gss i dss zero gate voltage drain current g fs forward transconductance gate threshold voltage temperature coefficient r ds(on) static drain-source on-resistance i d(on) on-state drain current r ds(on) static drain-source on-resistance c iss c oss c rss input capacitance output capacitance reverse transfer capacitance t d(on) turn-on delay time tr turn-on rise time t d(off) turn-off delay time t f turn-off fall time q g total gate charge gate-source charge q gs q gd gate-drain charge p-ch v mv/ a na v mv/ m ns ns a s pf nc testconditons ns ns nc nc pf pf KI4542DY
www.kexin.com.cn 3 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit n-ch 1.3 p-ch -1.3 v gs =0v,i s = 1.3a (not 2) n-ch 0.7 1.2 v gs =0v,i s = -1.3a (not 2) p-ch -0.7 -1.2 v sd drain-source diode forward voltage i s maximum continuous drain-source diode forward current a v testconditons KI4542DY
|