sot23 pnp silicon planar medium power transistors issue 3 - october 1995 j features * low equivalent on-resistance; r ce(sat) 250m w at 1a * 1 amp continuous current complementary types ? FMMT549 - fmmt449 FMMT549a - n/a partmarking detail ? FMMT549 - 549 FMMT549a - 59a absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation: at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo -35 v i c =-100 m a v (br)ceo -30 v i c =-10ma* v (br)ebo -5 v i e =-100 m a cut-off currents i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, t amb =100c i ebo -0.1 m a v eb =-4v saturation voltages v ce(sat) -0.25 -0.50 -0.50 -0.75 v v i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* FMMT549a -0.30 v i c =-100ma, i b =-1ma* v be(sat) -0.9 -1.25 v i c =-1a, i b =-100ma* base emitter turn-on voltage v be(on) -0.85 -1 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 70 80 40 200 130 80 i c =-50ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* FMMT549 100 160 300 i c =-500ma, v ce =-2v* FMMT549a 150 200 500 i c =-500ma, v ce =-2v* transition frequency f t 100 mhz i c =-100ma, v ce =-5v f=100mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on 50 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 300 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT549 FMMT549a c b e 3 - 127 FMMT549 FMMT549a 3 - 128 0.1 1 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol t s) switching speeds i c - collector current (amps) sw i tchi n g tim e i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - g a i n v - (v ol t s) v - (v ol t s) i b1 =i b2 =i c /10 single pulse test at t amb =25c 0.7 0.8 0.9 1.0 0.01 0.001 0.01 10 0.1 1 40 80 120 160 200 0.01 10 0.1 1 i c /i b =100 0.001 0.01 0.1 1 i c /i b =10 0.01 0.1 10 1 i c /i b =100 0.6 v ce =2v i c /i b =10 i c /i b =10 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 0 100 80 60 40 0 20 160 140 120 td,tr,tf (ns) 180 1000 800 600 400 0 200 1600 1400 1200 ts (ns) 1800 tr ts tf td 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10
sot23 pnp silicon planar medium power transistors issue 3 - october 1995 j features * low equivalent on-resistance; r ce(sat) 250m w at 1a * 1 amp continuous current complementary types ? FMMT549 - fmmt449 FMMT549a - n/a partmarking detail ? FMMT549 - 549 FMMT549a - 59a absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation: at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo -35 v i c =-100 m a v (br)ceo -30 v i c =-10ma* v (br)ebo -5 v i e =-100 m a cut-off currents i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, t amb =100c i ebo -0.1 m a v eb =-4v saturation voltages v ce(sat) -0.25 -0.50 -0.50 -0.75 v v i c =-1a, i b =-100ma* i c =-2a, i b =-200ma* FMMT549a -0.30 v i c =-100ma, i b =-1ma* v be(sat) -0.9 -1.25 v i c =-1a, i b =-100ma* base emitter turn-on voltage v be(on) -0.85 -1 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 70 80 40 200 130 80 i c =-50ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* FMMT549 100 160 300 i c =-500ma, v ce =-2v* FMMT549a 150 200 500 i c =-500ma, v ce =-2v* transition frequency f t 100 mhz i c =-100ma, v ce =-5v f=100mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on 50 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 300 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT549 FMMT549a c b e 3 - 127 FMMT549 FMMT549a 3 - 128 0.1 1 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol t s) switching speeds i c - collector current (amps) sw i tchi n g tim e i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - g a i n v - (v ol t s) v - (v ol t s) i b1 =i b2 =i c /10 single pulse test at t amb =25c 0.7 0.8 0.9 1.0 0.01 0.001 0.01 10 0.1 1 40 80 120 160 200 0.01 10 0.1 1 i c /i b =100 0.001 0.01 0.1 1 i c /i b =10 0.01 0.1 10 1 i c /i b =100 0.6 v ce =2v i c /i b =10 i c /i b =10 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 0 100 80 60 40 0 20 160 140 120 td,tr,tf (ns) 180 1000 800 600 400 0 200 1600 1400 1200 ts (ns) 1800 tr ts tf td 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10
|
