AON6403L p-channel power transistor v ds -30v i d (at v gs = -10v) -85a r ds(on) (at v gs = -10v) < 3.1m ? r ds(on) (at v gs = -4.5v) < 4.3m ? - rohs compliant - halogen free symbol v ds v gs i dm i ar e ar t j , t stg symbol t 10s steady-state steady-state r jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1 55 1.5 power dissipation b p d w power dissipation a p dsm w t a =70c 83 1.4 t a =25c a t a =25c i dsm a t a =70c i d -85 -67 t c =25c t c =100c repetitive avalanche energy l=0.1mh c mj avalanche current c -17 continuous drain current 259 -21 a -72 the AON6403L combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted v 20 gate-source voltage drain-source voltage -30 units maximum junction-to-ambient a c/w r ja 14 40 17 junction and storage temperature range -55 to 150 c thermal characteristics -280 pulsed drain current c continuous drain current g parameter typ max t c =25c 2.3 33 t c =100c top view g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.2 -1.7 -2.2 v i d(on) -280 a 2.6 3.1 t j =125c 3.6 4.4 3.5 4.3 m ? g fs 82 s v sd -0.7 -1 v i s -85 a c iss 6100 7600 9120 pf c oss 930 1320 1720 pf c rss 630 1050 1470 pf r g 124 ? q g (10v) 130 163 196 nc q g (4.5v) 63 79 95 nc q gs 18 22 26 nc q gd 20 33 46 nc t d(on) 13 ns t r 18 ns t d(off) 135 ns t f 52 ns t rr 21 26 32 ns q rr 63 78 94 nc components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-20a reverse transfer capacitance i f =-20a, di/dt=500a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =v gs i d =-250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m ? i s =-1a,v gs =0v v ds =-5v, i d =-20a v gs =-4.5v, i d =-20a v gs =-10v, v ds =-15v, r l =0.75 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-20a gate source charge gate drain charge total gate charge rev 1: january 2009 body diode reverse recovery charge i f =-20a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c.maximum uis current limited by test equipment. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. www.freescale.net.cn 2/6 AON6403L p-channel power transistor
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 30 60 90 120 150 012345 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 1 2 3 4 5 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-20a v gs =-10v i d =-20a 1 2 3 4 5 6 7 8 9 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-20a 25c 125c 0 30 60 90 120 150 012345 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-2.5v -3v -10v -3.5v -4v www.freescale.net.cn 3/6 AON6403L p-channel power transistor
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0 30 60 90 120 150 180 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 50 100 150 200 250 300 350 400 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =-15v i d =-20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 1 0 m s 1m s dc r ds(on) limited t j(max) =150c t c =25c 1 00 s r jc =1.5c/w www.freescale.net.cn 4/6 AON6403L p-channel power transistor
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 20.0 50.0 80.0 110.0 140.0 170.0 200.0 230.0 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) -i ar (a) peak avalanche current 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 20 40 60 80 100 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) -current rating i d (a) t a =25c 1 10 100 1000 10000 0.0001 0.01 1 100 10000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r ja =55c/w www.freescale.net.cn 5/6 AON6403L p-channel power transistor
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds tt t t t t 90% 10% r on d(off) f off d(on) www.freescale.net.cn 6/6 AON6403L p-channel power transistor
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