2SD2656 transistors 1/2 general purpose amplification (30v, 1a) 2SD2656 ! ! ! ! application low frequency amplifier ! ! ! ! features 1) a collector current is large. 2) collector saturation voltage is low. v ce(sat) 350mv at i c = 500ma / i b = 25ma ! ! ! ! external dimensions (units : mm) rohm : umt3 eiaj : sc-70 jedec : sot-323 (1) emitter (2) base (3) collector 1.25 2.1 0.3 0.15 0~0.1 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 abbreviated symbol : eu each lead has same dimensions ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol unit ? v cbo v collector-base voltage v ceo v collector-emitter voltage v ebo v emitter-base voltage i c a i cp a collector current p c mw power dissipation tj c junction temperature tstg limits 30 30 6 1 2 200 150 ? 55~ + 150 c range of storage temperature ? single pulse, p w = 1ms ! ! ! ! packaging specifications 2SD2656 t106 3000 type package code basic ordering unit (pieces) taping ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions 30 ?? v i c = 10 a collector-base breakdown voltage bv cbo 30 ?? v i c = 1ma collector-emitter breakdown voltage bv ceo 6 ?? v i e = 10 a emitter-base breakdown voltage bv ebo ?? 100 na v cb = 30v collector cutoff current i cbo emitter cutoff current ?? 100 na v eb = 6v i ebo ? 140 350 mv i c /i b = 500ma/25ma collector-emitter saturation voltage v ce(sat) 270 ? 680 ? v ce /i c = 2v/100ma dc current gain h fe ? 400 ? mhz v ce = 2v, i e =? 100ma, f = 100mhz transition frequency f t ? 5 ? pf v cb = 10v, i e = 0a, f = 1mhz corrector output capacitance cob ? 1 ? 1 ? 1 pulsed
2SD2656 transistors 2/2 ! ! ! ! electrical characteristic curves 0.001 0.01 0.1 1 collector current : i c (a) 10 dc current gain : h fe 100 1000 ta = 25 c ta =? 40 c ta = 100 c v ce = 2v pulsed fig.1 dc current gain vs. collector current 0.001 0.01 0.1 1 collector current : i c (a) base saturation voltage : v be (sat) (v) collector saturation voltage : v ce (sat) (v) 0.1 0.01 10 1 ta = 25 c ta = 25 c ta =? 40 c ta =? 40 c ta = 100 c ta = 100 c v be(sat) v ce(sat) i c /i b = 20 pulsed i c /i b = 20/1 pulsed fig.2 collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 1 collector current : i c (a) 0.001 collector saturation voltage : v ce(sat) (v) 0.01 0.1 10 1 ta = 25 c v ce = 2v i c /i b = 50/1 i c /i b = 20/1 i c /i b = 10/1 fig.3 collector-emitter saturation voltage vs. collector current 0 0.001 0.01 0.1 1 base to emitter voltage : v be (v) collector current : i c (a) 1.5 1.0 0.5 v ce = 2v pulsed ta = 25 c ta =? 40 c ta = 100 c fig.4 grounded emitter propagation characteristics 0.01 0.1 1 emitter current : i e (a) 10 transition frequency : f t (mhz) 100 1000 v ce = 2v ta = 25 c f = 100mhz fig.5 gain bandwidth product vs. emitter current 0.01 0.1 1 collector current : i c (a) fig.6 switching time 1 switching time : (ns) 10 100 1000 ta = 25 c v ce = 5v i c /i b = 20/1 tstg tdon tr tf 0.01 0.1 1 10 100 emitter to base voltage : v eb (v) collector to base voltage : v cb (v) 1 emitter input capacitance : cib (pf) collector output capacitance : cob (pf) 10 100 cib cob i c = 0a f = 1mhz ta = 25 c fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 0.1 1 10 100 collector to emitter voltage : v ce (v) 0.001 0.01 collector current : i c (a) 0.1 1 10 ta = 25 c single pulse 10ms 1ms dc operation p w = 100ms fig.8 safe operating area
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