vishay tlmo / s / y300. document number 83224 rev. 1.3, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19225 low current smd led description these new devices have been designed to meet the increasing demand for allngap based low current smd leds. the package of the tlm.300. is the plcc-2 package. it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. features ? smd led with exceptional brightness compatible with automatic placement equipment eia and ice standard package compatible with infrared, vapor phase and wave solder processes according to cecc available in 8 mm tape low profile package non-diffused lens: excellent for coupling to light pipes and backlighting very low power consumption luminous intensity ratio in one packaging unit i vmax /i vmin 2.0 esd withstand voltage up to 1 kv lead-free device applications automotive: backlighting in dashboards and switches telecommunication: indicator and backlighting in telephone and fax indicator and backlight for audio and video equipment indicator and backlight for battery driven equipment indicator and backlight in office equipment flat backlight for lcds, switches and symbols general use parts table part color, luminous intensity angle of half intensity ( ? ) technology tlms3000 red, i v = 2.8 mcd (typ.) 60 allngap tlms3001 red, i v = 4.5 mcd (typ.) 60 allngap tlmo3000 orange, i v = 5.6 mcd (typ.) 60 alingap tlmo3001 orange, i v = 9.0 mcd (typ.) 60 alingap TLMY3000 yellow, i v = 4.5 mcd (typ.) 60 alingap tlmy3001 yellow, i v = 7.1 mcd (typ.) 60 alingap
www.vishay.com 2 document number 83224 rev. 1.3, 31-aug-04 vishay tlmo / s / y300. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified tlm.300. optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlms300. 1) in one packing unit i vmax /i vmin 2.0 orange tlmo300. 1) in one packing unit i vmax /i vmin 2.0 parameter test condition symbol value unit reverse voltage v r 6v dc forward current i f 15 ma surge forward current t p 10 si fsm 0.1 a power dissipation t amb 100 c p v 40 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 2 ma tlms3000 i v 2.5 mcd i f = 10 ma tlms3000 i v 20 mcd i f = 2 ma tlms3001 i v 4.0 12.5 mcd dominant wavelength i f = 2 ma d 624 636 nm peak wavelength i f = 2 ma p 635 nm angle of half intensity i f = 2 ma ? 60 deg forward voltage i f = 2 ma v f 1.8 2.2 v reverse voltage i r = 10 av r 615 v parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 2 ma tlmo3000 i v 5.0 mcd i f = 10 ma tlmo3000 i v 50 mcd i f = 2 ma tlmo3001 i v 6.3 20 mcd dominant wavelength i f = 2 ma d 600 609 nm peak wavelength i f = 2 ma p 610 nm angle of half intensity i f = 2 ma ? 60 deg forward voltage i f = 2 ma v f 1.8 2.2 v reverse voltage i r = 10 av r 615 v
vishay tlmo / s / y300. document number 83224 rev. 1.3, 31-aug-04 vishay semiconductors www.vishay.com 3 yellow tlmy300. 1) in one packing unit i vmax /i vmin 2.0 typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 2 ma TLMY3000 i v 4.0 mcd i f = 10 ma TLMY3000 i v 50 mcd i f = 2 ma tlmy3001 i v 6.3 20 mcd dominant wavelength i f = 2 ma d 581 594 nm peak wavelength i f = 2 ma p 585 nm angle of half intensity i f = 2 ma ? 60 deg forward voltage i f = 2 ma v f 1.8 2.2 v reverse voltage i r = 10 av r 615 v figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature 0 10 20 30 40 50 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 18253 100 80 60 40 20 0 0 5 10 15 20 25 i - forward current ( ma ) f 18254 100 80 60 40 20 0 t amb - ambient temperature ( c) figure 3. rel. luminous intensity vs. angular displacement figure 4. forward current vs. forward voltage 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vre l 1 10 100 1.0 1.5 2.0 2.5 3.0 v f - forward voltag e(v) 95 10878 f i - forward current ( ma )
www.vishay.com 4 document number 83224 rev. 1.3, 31-aug-04 vishay tlmo / s / y300. vishay semiconductors figure 5. relative intensity vs. wavelength figure 6. rel. luminous intensity vs. ambient temperature figure 7. forward voltage vs. ambient temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 540 560 580 600 620 640 660 680 700 o ? wavelength ( nm ) 18266 i ? relative luminous intensity vrel orange red yellow 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 -40 -20 0 20 40 60 80 100 t amb - ambient t emperature ( c) 18251 i - relative luminous intensity vrel yellow orange red 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 -40 -20 0 20 40 60 80 100 t amb - ambient temperature ( c) 18252 v - forward voltage frel yellow orange red figure 8. forward current vs. pulse length 10 100 1000 0.01 0.10 1.00 10.00 100.00 t p ? pulse duration ( ms ) 17557 i ? forward current ( a ) f t p /t= 0.01 0.05 0.2 0.5 1 0.02 0.1
vishay tlmo / s / y300. document number 83224 rev. 1.3, 31-aug-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 95 11314 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 ca
www.vishay.com 6 document number 83224 rev. 1.3, 31-aug-04 vishay tlmo / s / y300. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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