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| BAT54V schottky diode features surface mount schottky barrier diode arrays marking: kav maximum ratings @t a =25 parameter symbol limits unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 v average rectified output current i o 200 ma power dissipation p d 150 mw thermal resistance junction to ambient air r ja 833 /w storage temperature t stg -65-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br)r i r = 100 a 30 v reverse voltage leakage current i r v r =25v 2 u a forward voltage v f i f =1ma i f =10ma i f =30ma i f =100ma 320 400 500 1000 mv total capacitance c t v r =1v,f=1mhz 10 pf reverse recovery time t r r i f =10ma, i r =10ma~1ma r l =100 ? 5 ns 1 sot-563 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
typical characteristics BAT54V www.htsemi.com semiconductor jinyu 2 date:2011/ 05 |
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