npn 2N2102 comset semiconductors 1/3 medium power amplifier & switch the 2N2102 is a silicon planar epitaxial npn transistor in jedec to-39 metal case. they are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. compliance to rohs . absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) 65 v v cbo collector-base voltage (i e = 0) 120 v v cer collector-emitter voltage (r be = 10 ? ) 80 v v ebo emitter-base voltage 7 v i c collector current 1 a p d total power dissipation t amb = 25c 1 w t case = 25c 5 t j junction temperature -65 to 200 c t st g storage temperature range thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction-case 35 c/ w r th j -a thermal resistance from junction to ambient in free air 175 www.datasheet.net/ datasheet pdf - http://www..co.kr/
npn 2N2102 2 | 3 24/09/2012 comset semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = 60 v i e = 0 t amb = 25c - - 2 na t amb = 150c - - 2 a i ebo emitter cutoff current v eb = 5 v, i c = 0 - - 5 na v cbo collector base sustaining voltage i c = 100 a, i e = 0 120 - - v v ceo collector emitter sustaining voltage (*) i c = 30 ma, i b = 0 65 - - v h fe dc current gain (*) i c = 10 a, v ce = 10 v 10 - - - i c = 0.1 ma, v ce = 10 v 20 - - i c = 10 ma, v ce = 10 v 35 - i c = 150 ma, v ce = 10 v 40 - 120 i c = 500 ma, v ce = 10 v 25 - - i c = 1 a, v ce = 10 v 10 - - v ce(sat) collector-emitter saturation voltage (*) i c = 150 ma, i b = 15 ma - - 0.5 v v be(sat) base-emitter saturation voltage (*) i c = 150 ma, i b = 15 ma - - 1.1 v c c collector capacitance i e = 0 ,v cb = 10 v f = 1mhz - - 15 pf c e emitter capacitance i c = 0 ,v eb = 0.5 v f = 1mhz - - 80 pf (*) pulse conditions : tp < 300 s, =2%. www.datasheet.net/ datasheet pdf - http://www..co.kr/
npn 2N2102 3 | 3 24/09/2012 comset semiconductors mechanical data case to-39 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
|
