HVU132 silicon epitaxial planar pin diode for antenna switching ade-208-321a (z) rev. 1 features low capacitance.(c = 0.5pfmax) low forward resistance. (r f = 2.0 w max) u ltra small r esin p ackage (urp) is suitable for surface mount design. ordering information type no. laser mark package code HVU132 p2 urp outline cathode mark mark 12 1. cathode 2. anode p2
HVU132 2 absolute maximum ratings (ta = 25c) item symbol value unit peak reverse voltage v rm 65 v reverse voltage v r 60 v forward current i f 100 ma power dissipation pd 150 mw junction temperature tj 125 c storage temperature tstg C55 to +125 c electrical characteristics (ta = 25c) item symbol min typ max unit test condition forward voltage v f 1.0 v i f = 10ma reverse current i r 0.1 a v r = 60v capacitance c 0.5 pf v r = 1v, f = 1mhz forward resistance r f 2.0 w i f = 10ma, f = 100mhz
HVU132 3 0 0.2 0.4 0.6 0.8 1.0 10 10 ? 10 ? 10 ? 10 ?0 10 ?2 ? forward voltage v (v) f forward current i (a) f fig.1 forward current vs. forward voltage 080 20 60 40 100 10 ? 10 10 ? 10 ? 10 ? 10 ?1 10 ?2 ?0 reverse voltage v (v) r reverse current i (a) r fig.2 reverse current vs. reverse voltage
HVU132 4 10 10 10 10 1.0 2 1.0 ? f = 1mhz reverse voltage v (v) r capacitance c (pf) fig.3 capacitance vs. reverse voltage 10 10 10 10 10 1.0 10 10 2 ? ? ? ? 10 3 ? f = 100mhz forward current i (a) f forward resistance r ( ) f w fig.4 forward resistance vs. forward current
HVU132 5 package dimensions 1.25 0.15 2.5 0.15 1.7 0.15 0.3 0.15 0.9 0.15 0 0.05 p2 cathode mark 1 2 hitachi code jedec code eiaj code weight (g) urp 0.004 1 2 cathode anode unit: mm
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