1 semiconductors summary n-channel : v (br)dss = 30v : r ds(on) = 0.050 ; i d = 5.4a p-channel : v (br)dss = -30v : r ds(on) = 0.070 ; i d = -4.4a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? low profile soic package applications ? motor drive ? lcd backlighting device marking ? zxmc 3a17 ZXMC3A17DN8 provisional issue b - june 2003 complementary 30v enhancement mode mosfet device reel size tape width quantity per reel ZXMC3A17DN8ta 7? 12mm 500 units ZXMC3A17DN8tc 13? 12mm 2500 units ordering information q2 = p-channel top view pinout s o 8 q1 = n-channel
ZXMC3A17DN8 semiconductors provisional issue b - june 2003 2 parameter symbol value unit junction to ambient (a) (d) r ja 100 c/w junction to ambient (a) (e) r ja 70 c/w junction to ambient (b) (d) r ja 60 c/w notes: (a) for a dual device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditi ons. (b) for a dual device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating 25mm x 25mm fr4 pcb, d = 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature. (d) for a dual device with one active die. (e) for dual device with two active die running at equal power. thermal resistance parameter symbol n-channel p-channel unit drain-source voltage v dss 30 -30 v gate-source voltage v gs 20 20 v continuous drain current (v gs = 10v; t a =25c) (b)(d) (v gs = 10v; t a =70c) (b)(d) (v gs = 10v; t a =25c) (a)(d) i d 5.4 4.3 4.1 -4.4 -3.6 -3.4 a pulsed drain current (c) i dm 23 -20 a continuous source current (body diode) (b) i s 2.6 -2.5 a pulsed source current (body diode) (c) i sm 23 -20 a power dissipation at t a =25c (a) (d) linear derating factor p d 1.25 10 w mw/c power dissipation at t a =25c (a) (e) linear derating factor p d 1.8 14 w mw/c power dissipation at t a =25c (b) (d) linear derating factor p d 2.1 17 w mw/c operating and storage temperature range t j ,t stg -55 to +150 c absolute maximum ratings
characteristics ZXMC3A17DN8 semiconductors provisional issue b - june 2003 3
ZXMC3A17DN8 semiconductors provisional issue b - june 2003 4 parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 30 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 0.5 av ds =30v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.050 0.065 v gs = 10v, i d = 7.8a v gs = 4.5v, i d =6.8a forward transconductance (1) (3) g fs 10 s v ds = 10v, i d = 7.8a dynamic (3) input capacitance c iss 600 pf v ds = 25v, v gs =0v f=1mhz output capacitance c oss 104 pf reverse transfer capacitance c rss 58.5 pf switching (2) (3) turn-on-delay time t d(on) 2.9 ns v dd = 15v, i d =3.5a r g ? 6.0 , v gs = 10v rise time t r 6.4 ns turn-off delay time t d(off) 16 ns fall time t f 11.2 ns gate charge q g 6.9 nc v ds = 15v, v gs =5v i d = 3.5a total gate charge q g 12.2 nc v ds = 15v, v gs = 10v i d = 3.5a gate-source charge q gs 1.7 nc gate-drain charge q gd 2.4 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s = 3.2a, v gs =0v reverse recovery time (3) t rr 18.8 ns t j =25c, i f = 3.5a, di/dt=100a/ s reverse recovery charge (3) q rr 14.1 nc n-channel electrical characteristics (at t amb = 25c unless otherwise stated). (1) measured under pulsed conditions. pulse width 300ms; duty cycle 2%. (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMC3A17DN8 semiconductors provisional issue b - june 2003 5 parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -30 v i d = -250 a, v gs =0v zero gate voltage drain current i dss -1.0 av ds = -30v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d = -250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.070 0.110 v gs = -10v, i d = -3.2a v gs = -4.5v, i d = -2.5a forward transconductance (1) (3) g fs 6.4 s v ds = -15v, i d = -3.2a dynamic (3) input capacitance c iss 630 pf v ds = -15v, v gs =0v f=1mhz output capacitance c oss 113 pf reverse transfer capacitance c rss 78 pf switching (2) (3) turn-on-delay time t d(on) 1.7 ns v dd = -15v, i d = -1a r g ? 6.0 , v gs = -10v rise time t r 2.9 ns turn-off delay time t d(off) 29.2 ns fall time t f 8.7 ns gate charge q g 8.3 nc v ds = -15v, v gs = -5v i d = -3.2a total gate charge q g 15.8 nc v ds = -15v, v gs = -10v i d = -3.2a gate-source charge q gs 1.8 nc gate drain charge q gd 2.8 nc source-drain diode diode forward voltage (1) v sd -0.85 -0.95 v t j =25c, i s = -2.5a, v gs =0v reverse recovery time (3) t rr 19.5 ns t j =25c, i s = -1.7a, di/dt=100a/ s reverse recovery charge (3) q rr 16.3 nc p-channel electrical characteristics (at t amb = 25c unless otherwise stated). (1) measured under pulsed conditions. pulse width 300ms; duty cycle 2%. (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
n-channel typical characteristics ZXMC3A17DN8 semiconductors provisional issue b - june 2003 6
n-channel typical characteristics ZXMC3A17DN8 semiconductors provisional issue b - june 2003 7
p-channel typical characteristics ZXMC3A17DN8 semiconductors provisional issue b - june 2003 8
p-channel typical characteristics ZXMC3A17DN8 semiconductors provisional issue b - june 2003 9
ZXMC3A17DN8 semiconductors 10 provisional issue b - june 2003 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 dim millimetres inches dim millimetres inches min max min max min max min max a 1.35 1.75 0.053 0.069 e 1.27bsc 0.050bsc a1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 d 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 h 5.80 6.20 0.228 0.244 0 8 0 8 e 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 l 0.40 1.27 0.016 0.050 - ---- package dimensions controlling dimensions are in millimetres. approximate conversions are given in inches so8 package outline (conforms to jedec ms-012aa iss. c)
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