absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter con dition ratings units v drm repetitive peak off-state voltage si ne wave, 50 to 60 hz, gate open 600 v i t(rms) r.m.s on-state current t c = 95 c, full sine wave 4.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 30/33 a i 2 t i 2 t for fusing tp = 10ms 4.5 a 2 s p gm peak gate power dissipation t c = 95 c, pulse width ? 1.0 us 3w p g(av) average gate power dissipation over any 20ms period 0.3 w i gm peak gate current tp = 20us, t j =125c 1.0 a v gm peak gate voltage tp = 20us, t j =125c 7.0 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 0.26 g jul, 2005. rev. 0 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 4 a ) high commutation dv/dt general description this device is suitable for low power ac switching applica- tion, phase control application such as fan speed and tem- perature modulation control, i ndustrial and domestic lighting control and static switching relay. 1/6 DTR4A60 triacs / standard gate 2.t2 3.gate 1.t1 symbol ? ? ? ? i t(rms) = 4 a i tsm = 30 a bv drm = 600v 1 2 3 to-126 copyright@ d&i semiconductor co., ltd., all rights reserved.
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 1.0 ma v tm peak on-state voltage i t = 6.0 a, inst. measurement 1.6 v i + gt1 gate trigger current v d = 6 v, r l =10 ? 20 ma i - gt1 ? 20 i - gt3 ? 20 v + gt1 gate trigger voltage v d = 6 v, r l =10 ? 1.5 v v - gt1 ? 1.5 v - gt3 ? 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -2.0 a/ms, v d =2/3 v drm 5.0 v/ k i h holding current 5.0 ma r th(j-c) thermal impedance junction to case 3.5 c/w DTR4A60 2/6 ? notes : 1. pulse width ? 300us , duty cycle ? 2%
10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) 25 ? i gm (1a) p g (av) (0.3w) p gm (3w) v gm (7v) gate voltage [v] gate current [ma] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 95 100 105 110 115 120 125 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] -50 0 50 100 150 0.1 1 10 v gt (t o c) v + gt1 v _ gt1 v _ gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 5 10 15 20 25 30 35 60hz 50hz surge on-state current [a] time (cycles) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 -1 10 0 10 1 10 2 125 o c 25 o c on-state current [a] on-state voltage [v] DTR4A60 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature ? ? 2 t 360 t ? : conduction angle ? ? 2 t 360 t ? : conduction angle
-50 0 50 100 150 0.1 1 10 i + gt1 i _ gt1 i _ gt3 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 1 10 transient thermal impedance [ o c/w] time (sec) 4/6 DTR4A60 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? ? a v 10 ? 6v r g ? ? test procedure test procedure ? test procedure ?
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126 DTR4A60 to-126 package dimension 1. gate 2. t2 3. t1 a b c d e f g 3 2 1 h i j k l 5/6
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 m 5.0 0.197 3.2 0.126 DTR4A60 to-126 package dimension, forming 6/6 1. gate 2. t2 3. t1 a b c d e f g 3 2 1 h i j k l m
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