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mw5ic2030nbr1 mw5ic2030gnbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw5ic2030n wi deband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 mhz. this multi - stage structure is rated for 26 to 28 volt operation and covers all typical cellular base station modulation formats. final application ? typical cdma performance: v dd = 27 volts, i dq1 = 160 ma, i dq2 = 230 ma, p out = 5 watts avg., full frequency band, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13), channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 23 db drain efficiency ? 20% acpr @ 885 khz offset ? - 49 dbc in 30 khz channel bandwidth driver application ? typical cdma performance: v dd = 27 volts, i dq1 = 220 ma, i dq2 = 240 ma, p out = 1 watt avg., full frequency band, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13), channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 24 db acpr @ 885 khz offset ? - 63 dbc in 30 khz channel bandwidth ? capable of handling 10:1 vswr, @ 27 vdc, 1990 mhz, 30 watts cw output power ? stable into a 3:1 vswr. all spurs below - 60 dbc @ 0 to 43 dbm cw p out . ? on - chip matching (50 ohm input, >4 ohm output) ? integrated temperature compensation capability with enable/disable function ? on - chip current mirror g m reference fet for self biasing application (1) ? integrated esd protection ? 200 c capable plastic package ? n suffix indicates lead - free terminations. rohs compliant. ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel 1. refer to an1987, quiescent current control for the rf integrated circuit device family. go to http://www.freescale.com/rf . select documentation/application notes - an1987. document number: mw5ic2030n rev. 8, 5/2006 freescale semiconductor technical data 1930 - 1990 mhz, 30 w, 26 v gsm/gsm edge, w - cdma, phs rf ldmos wideband integrated power amplifiers case 1329 - 09 to - 272 wb - 16 plastic mw5ic2030nbr1 mw5ic2030nbr1 mw5ic2030gnbr1 case 1329a - 03 to - 272 wb - 16 gull plastic mw5ic2030gnbr1 figure 1. functional block diagram figure 2. pin connections (top view) gnd gnd rf in v rg1 /v gs1 gnd v ds1 v ds2/ rf out gnd v gs2 gnd v rd2 v rg2 v rd1 nc nc nc v rg1 /v gs1 rf in v ds1 v gs2 v ds2 /rf out quiescent current temperature compensation v rd2 v rg2 v rd1 2 3 4 5 6 7 8 16 15 14 13 12 9 10 11 1 note: exposed backside flag is source terminal for transistors. ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1 table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc storage temperature range t stg - 65 to +175 c operating junction temperature t j 200 c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case cdma application stage 1, 27 vdc, i dq = 160 ma (p out = 5 w cw) stage 2, 27 vdc, i dq = 230 ma phs application stage 1, 26 vdc, i dq = 300 ma (p out = 12.6 w cw) stage 2, 26 vdc, i dq = 1300 ma r jc 4.89 1.75 4.85 1.61 c/w table 3. esd protection characteristics test conditions class human body model 1b (minimum) machine model a (minimum) charge device model 3 (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit cdma functional tests (in freescale 1900 mhz test fixture, 50 hm system) v dd = 27 vdc, i dq1 = 160 ma, i dq2 = 230 ma, p out = 5 w avg., 1960 mhz, single - carrier n - cdma, 1.2288 mhz channel bandwidth carrier. acpr measured in 30 khz channel bandwidth @ 885 khz offset. par = 9.8 db @ 0.01 probability on ccdf. power gain g ps 21.5 23 ? db drain efficiency d 18 20 ? % input return loss irl ? -18 -10 db adjacent channel power ratio acpr ? -49 -47 dbc gain flatness in 30 mhz bw, 1930 - 1990 mhz g f ? 0.2 0.3 db 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. (continued)
mw5ic2030nbr1 mw5ic2030gnbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture) v dd = 26 vdc, i dq1 = 160 ma, i dq2 = 230 ma, p out = 5 w, f = 1960 mhz p out @ 1 db compression point, cw p1db ? 30 ? w deviation from linear phase in 30 mhz bw (characterized from 1930 - 1990 mhz) ? 1 ? delay delay ? 2.25 ? ns part - to - part phase variation ? ? 10 ? part - to - part gain variation (per lot or reel) g ? 1.5 ? db reference fet to rf fet scaling ratio delta (stages 1 and 2) ? 10 ? % typical phs performances (in freescale test fixture, 50 hm system) v dd = 26 vdc, i dq1 = 260 ma, i dq2 = 1100 ma, p out = 12.6 w, 1900 mhz, phs signal mask power gain g ps ? 24 ? db drain efficiency d ? 25 ? % input return loss irl ? -15 ? db adjacent channel power ratio (600 khz offset in 192 khz bw) acpr ? -72 ? dbc
4 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1 116 figure 3. mw5ic2030nbr1(gnbr1) test circuit schematic rf output rf input z1 v d2 z9 z8 c5 c20 z3 z4 z5 z6 z7 c3 c4 c1 v bias2 r2 r5 c10 c16 v rd2 c13 2 3 4 5 6 7 8 nc nc 14 15 12 13 + c8 z11 v bias1 r1 r4 c11 c15 v rg1 /v gs1 c14 v bias r2 11 10 9 nc quiescent current temperature compensation c2 nc c17 + c18 + z2 c7 v d1 r3 r6 c12 z10 c9 + c6 c19 v rd1 z7 0.200 x 0.025 microstrip z8 0.274 x 0.050 microstrip z9 0.615 x 0.050 microstrip z10 0.450 x 0.025 microstrip z11 0.340 x 0.014 microstrip pcb rogers 4350, 0.020 , r = 3.5 z1 0.465 x 0.041 microstrip z2 0.518 x 0.041 microstrip z3 0.282 x 0.235 microstrip z4 0.221 x 0.081 microstrip z5 0.489 x 0.041 microstrip z6 0.471 x 0.025 microstrip table 6. mw5ic2030nbr1(gnbr1) test circuit component designations and values part description part number manufacturer c1 1.8 pf high q chip capacitor (0603) 600s1r8at - 250 - t atc c2 1.5 pf high q chip capacitor (0603) 600s1r5at - 250 - t atc c3 3.9 pf high q chip capacitor (0603) 600s3r9at - 250 - t atc c4 6.8 pf high q chip capacitor (0805) 600s6r8at - 250 - t atc c5, c6 100 pf class 1 npo chip capacitors (0805) grm215cb1h101cz01d murata c7 4.7 pf class 1 npo chip capacitor (0805) grm215cb1h4r7cz01d murata c8, c9, c10, c11 0.1 f x7r chip capacitors (1206) c1206c104k5ract kemet c12, c13, c14, c15, c16 0.01 f class 2 x7r chip capacitors (0805) c0805c103k5ract kemet c17, c18 22 f, 35 v electrolytic capacitors ece - 1avks220 panasonic c19, c20 330 f, 50 v electrolytic capacitors eca - 1hm331 panasonic r1, r3 1 k , 5% chip resistors (0805) r2 499 , 1% chip resistor (0805) r4, r5, r6 100 k , 5% chip resistors (0805)
mw5ic2030nbr1 mw5ic2030gnbr1 5 rf device data freescale semiconductor figure 4. mw5ic2030nbr1(gnbr1) test circuit component layout v d1 v d2 r d2 r g2 nc v g2 r d1 v g1 r g1 rev 3 mw5ic2030m cutout area c11 c12 r3 r2 r1 r4 c10 r5 c16 c15 c14 c18 c17 c7 c13 r6 c9 c6 c19 c20 c8 c5 c3 c2 c1 c4 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
6 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1 typical characteristics 2040 18 23 1880 ?36 32 f, frequency (mhz) figure 5. two - tone broadband performance @ p out = 10 watts avg. g ps , power gain (db) ?21 ?16 ?18 ?19 ?20 input return loss (db) irl, irl g ps imd 31 22 30 29 21 28 ?26 20 ?28 ?30 19 ?32 ?34 2020 2000 1900 1920 1940 1960 1980 ?17 2040 19 24 1880 ?51 9 f, frequency (mhz) figure 6. two - tone broadband performance @ p out = 1 watt avg. g ps , power gain (db) ?21 ?16 ?18 ?19 ?20 input return loss (db) irl, irl g ps imd v dd = 27 vdc, p out = 1 w (avg.) i dq1 = 160 ma, i dq2 = 230 ma 100 khz tone spacing 8 23 7 6 22 5 ?46 21 ?47 ?48 20 ?49 ?50 2020 2000 1900 1920 1940 1960 1980 ?17 v dd = 27 vdc, p out = 10 w (avg.) i dq1 = 160 ma, i dq2 = 230 ma 100 khz tone spacing 100 19 26 0.1 i dq1 = 200 ma i dq2 = 300 ma p out , output power (watts) pep figure 7. two - tone power gain versus output power g ps , power gain (db) v dd = 27 vdc f1 = 1960 mhz, f2 = 1960.1 mhz two?tone measurements i dq1 = 160 ma i dq2 = 230 ma i dq1 = 120 ma i dq2 = 175 ma 25 24 23 22 21 20 110 100 ?80 ?10 0.1 7th order p out , output power (watts) pep intermodulation distortion (dbc) imd, v dd = 27 vdc i dq1 = 160 ma, i dq2 = 230 ma f1 = 1960 mhz, f2 = 1960.1 mhz two?tone measurements 5th order 3rd order ?15 ?20 ?25 ?30 ?35 ?40 ?45 ?50 ?55 ?60 ?65 ?70 ?75 110 figure 8. intermodulation distortion products versus output power d , drain efficiency (%) imd, intermodulation distortion (dbc) d , drain efficiency (%) imd, intermodulation distortion (dbc) d d
mw5ic2030nbr1 mw5ic2030gnbr1 7 rf device data freescale semiconductor typical characteristics 100 ?60 ?15 0.1 7th order two?tone spacing (mhz) figure 9. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, v dd = 27 vdc, p out = 30 w (pep), i dq1 = 160 ma, i dq2 = 230 ma, two?tone measurements (f1 + f2/2) = center frequency of 1960 mhz 5th order 3rd order ?20 ?25 ?30 ?35 ?40 ?45 ?50 ?55 110 27 39 50 15 25 c p3db = 44.91 dbm (31 w) ideal p in , input power (dbm) figure 10. pulse cw output power versus input power p out , output power (dbm) v dd = 27 vdc i dq1 = 160 ma, i dq2 = 230 ma pulsed cw, 8 sec(on), 1 msec(off) f = 1960 mhz actual p1db = 44.69 dbm (29.5 w) ?30 c 85 c 49 48 47 46 45 44 43 42 41 40 16 17 18 19 20 21 22 23 24 25 26 41 0 30 29 ?55 ?25 p out , output power (dbm) figure 11. 2 - carrier w - cdma acpr, im3, power gain, and drain efficiency versus output power 25 ?30 20 ?35 15 ?40 10 ?45 5 ?50 30 31 32 33 34 35 36 37 38 39 40 im3 (dbc), acpr (dbc) 100 17 27 0 0 50 p out , output power (watts) cw figure 12. power gain and drain efficiency versus output power g ps , power gain (db) v dd = 27 vdc i dq1 = 160 ma i dq2 = 230 ma f = 1960 mhz ?30 c 25 c 85 c t c = ?30 c 25 c 85 c 26 45 25 40 24 35 23 30 22 25 21 20 20 15 19 10 18 5 110 g ps 60 15 25 0 v dd = 12 v 24 v p out , output power (watts) cw figure 13. power gain versus output power g ps , power gain (db) i dq1 = 160 ma, i dq2 = 230 ma f = 1960 mhz 28 v 32 v 24 23 22 21 20 19 18 17 16 20 40 3000 ?30 40 1000 ?35 0 s21 f, frequency (mhz) figure 14. broadband frequency response s11 (db) s21 (db) s11 1500 2000 2500 30 ?5 20 ?10 10 ?15 0 ?20 ?10 ?25 ?20 ?30 d d , drain efficiency (%) g ps acpr im3 d 2?carrier w?cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) v dd = 27 vdc, i dq1 = 160 ma, i dq2 = 230 ma, f = 1960 mhz v dd = 27 vdc, p out = 30 w i dq1 = 160 ma, i dq2 = 230 ma d , drain efficiency (%), g ps , power gain (db)
8 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1 typical characteristics 2000 20 27 1920 t c = ?30 c f, frequency (mhz) figure 15. power gain versus frequency g ps , power gain (db) v dd = 27 vdc, p out = 5 w (cw), i dq1 = 160 ma, i dq2 = 230 ma f1 = 1960 mhz, f2 = 1960.1 mhz, two?tone measurements 25 c 85 c 26 25 24 23 22 21 1930 1940 1950 1960 1970 1980 1990 100 0 8 1 0 40 p out , output power (watts) avg. figure 16. evm and drain efficiency versus output power evm, error vector magnitude (% rms) v dd = 27 vdc i dq1 = 160 ma i dq2 = 230 ma f = 1960 mhz 25 c 85 c t c = ?30 c source evm = 0.60% 630 420 210 10 100 ?85 ?45 0 25 c sr @ 400 khz p out , output power (watts) avg. figure 17. spectral regrowth at 400 khz and 600 khz versus output power v dd = 27 vdc i dq1 = 160 ma i dq2 = 230 ma f = 1960 mhz edge modulation sr @ 600 khz 25 c 85 c 85 c ?50 ?55 ?60 ?65 ?70 ?75 ?80 10 t c = ?30 c ?30 c spectral regrowth @ 400 khz and 600 khz (dbc) 40 ?80 ?40 22 alt2 p out , is?95 output power (dbm) figure 18. single - carrier n - cdma acpr, alt1 and alt2 versus output power v dd = 27 vdc i dq1 = 160 ma, i dq2 = 230 ma f = 1960 mhz n?cdma is?95 (pilot, sync, paging, traffic codes 8 through 13) acpr alt1 ?45 ?50 ?55 ?60 ?65 ?70 ?75 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 alt 1 & 2, alternate 1 & 2 channel power ratio (dbc) acpr, adjacent channel power ratio (dbc) 100 ?60 ?10 0 25 c p out , output power (watts) cw figure 19. insertion phase versus output power insertion phase ( ) t c = ?30 c 85 c ?20 ?30 ?40 ?50 110 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. figure 20. mttf factor versus junction temperature 190 1.e+09 90 1st stage mttf factor (hours x amps 2 ) 2nd stage 100 110 120 130 140 150 160 170 180 1.e+08 1.e+07 1.e+06 d d , drain efficiency (%)
mw5ic2030nbr1 mw5ic2030gnbr1 9 rf device data freescale semiconductor 2050 6.4 + j0.4 1990 figure 21. series equivalent input and load impedance f mhz z in z load 1800 1850 1930 6.9 - j0.3 6.7 - j0.1 6.9 - j0.3 49.7 - j9.3 47.7 - j9.8 44.8 - j8.5 v dd = 27 v, i dq1 = 160 ma, i dq2 = 230 ma z o = 50 z load * f = 1800 mhz f = 2200 mhz z in f = 2200 mhz f = 1800 mhz 1960 6.6 + j0.1 6.6 - j0.0 44.0 - j7.3 44.6 - j5.6 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z in z load device under test output matching network 45.7 - j8.6 2150 2100 6.1 + j1.1 6.2 + j0.8 42.5 - j8.3 40.6 - j6.8 2200 6.0 + j1.6 39.3 - j5.0
10 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1 driver application performance 116 figure 22. mw5ic2030nbr1(gnbr1) test circuit schematic for driver application tests rf output rf input z1 v d2 z9 z8 c5 c20 z3 z4 z5 z6 z7 c3 c4 c1 v bias2 r2 r5 c10 c16 v rd2 c13 2 3 4 5 6 7 8 nc nc 14 15 12 13 + c8 z11 v bias1 r1 r4 c11 c15 v rg1 /v gs1 c14 v bias r2 11 10 9 nc quiescent current temperature compensation c2 nc c17 + c18 + z2 c7 v d1 r3 r6 c12 z10 c9 + c6 c19 v rd1 z7 0.200 x 0.025 microstrip z8 0.274 x 0.050 microstrip z9 0.615 x 0.050 microstrip z10 0.450 x 0.025 microstrip z11 0.340 x 0.014 microstrip pcb rogers 4350, 0.020 , r = 3.5 z1 0.465 x 0.041 microstrip z2 0.518 x 0.041 microstrip z3 0.282 x 0.235 microstrip z4 0.221 x 0.081 microstrip z5 0.489 x 0.041 microstrip z6 0.471 x 0.025 microstrip table 7. mw5ic2030nbr1(gnbr1) test circuit component designations and values for driver application tests part description part number manufacturer c1 2.2 pf high q chip capacitor (0603) 600s2r2at - 250 - t atc c2 1.8 pf high q chip capacitor (0603) 600s1r8at - 250 - t atc c3 3.9 pf high q chip capacitor (0603) 600s3r9at - 250 - t atc c4 6.8 pf high q chip capacitor (0805) 600s6r8at - 250 - t atc c5, c6 100 pf class 1 npo chip capacitors (0805) grm215cb1h101cz01d murata c7 4.7 pf class 1 npo chip capacitor (0805) grm215cb1h4r7cz01d murata c8, c9, c10, c11 0.1 f x7r chip capacitors (1206) c1206c104k5ract kemet c12, c13, c14, c15, c16 0.01 f class 2 x7r chip capacitors (0805) c0805c103k5ract kemet c17, c18 22 f, 35 v electrolytic capacitors ece - 1avks220 panasonic c19, c20 330 f, 50 v electrolytic capacitors eca - 1hm331 panasonic r1, r3 1 k , 5% chip resistors (0805) r2 499 , 1% chip resistor (0805) r4, r5, r6 100 k , 5% chip resistors (0805)
mw5ic2030nbr1 mw5ic2030gnbr1 11 rf device data freescale semiconductor driver application performance figure 23. mw5ic2030nbr1(gnbr1) test circuit component layout for driver application tests v d1 v d2 r d2 r g2 nc v g2 r d1 v g1 r g1 rev 3 mw5ic2030m cutout area c11 c12 r3 r2 r1 r4 c10 r5 c16 c15 c14 c18 c17 c7 c13 r6 c9 c6 c19 c20 c8 c5 c3 c2 c1 c4 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
12 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1 typical driver application characteristics figure 24. 2 - carrier n - cdma acpr versus output power ?70 p out , output power (dbm) ?60 ?61 20 30 v dd = 27 vdc, i dq1 = 220 ma, i dq2 = 240 ma f1 = 1957.5 mhz, f2 = 1960 mhz, 2?carrier n?cdma 2.5 mhz carrier spacing, 1.2288 mhz channel bandwidth par = 9.8 db @ 0.01% probability (ccdf) acpr (dbc) ?62 ?63 ?64 ?65 ?66 ?67 ?68 ?69 21 22 23 24 25 26 27 28 29
mw5ic2030nbr1 mw5ic2030gnbr1 13 rf device data freescale semiconductor 2050 1990 figure 25. series equivalent input and load impedance for driver application f mhz z in z load 1800 1850 1930 49.7 - j9.3 47.7 - j9.8 44.8 - j8.5 v dd = 27 v, i dq1 = 220 ma, i dq2 = 240 ma z o = 50 z load f = 1800 mhz f = 2200 mhz z in f = 2200 mhz f = 1800 mhz 1960 44.0 - j7.3 44.6 - j5.6 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z in z load device under test output matching network 45.7 - j8.6 2150 2100 42.5 - j8.3 40.6 - j6.8 2200 39.3 - j5.0 9.8 - j7.0 8.9 - j6.3 7.2 - j4.6 6.8 - j3.9 6.5 - j3.4 5.9 - j2.3 5.6 - j1.5 5.4 - j0.7 5.2 + j0.1
14 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1 package dimensions
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16 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1
mw5ic2030nbr1 mw5ic2030gnbr1 17 rf device data freescale semiconductor
18 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1
mw5ic2030nbr1 mw5ic2030gnbr1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor mw5ic2030nbr1 mw5ic2030gnbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw5ic2030n rev. 8, 5/2006 rohs- compliant and/or pb - free versions of freescale products have the functionality and electrical characteristics of their non - rohs- compliant and/or non - pb - free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products pr ogram, go to http: //www .freescale.com/epp.

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