vishay siliconix SI8800EDB new product document number: 66700 s10-1046-rev. a, 03-may-10 www.vishay.com 1 n-channel 20 v (d-s) mosfet product summary v ds (v) r ds(on) ( )i d (a) a q g (typ.) 20 0.080 at v gs = 4.5 v 2.8 3.2 nc 0.090 at v gs = 2.5 v 2.6 0.105 at v gs = 1.8 v 2.4 0.150 at v gs = 1.5 v 2.0 micro foot device markin g : 8 00 xxx = date/lot tracea b ility code orderin g information: si 88 00edb-t2-e1 (lead (p b )-free and halogen-free) b u mp side v ie w backside v ie w xxx 8 00 s d g s 1 2 4 3 d s g r notes: a. surface mounted on 1" x 1" fr4 board with full copper, t = 5 s. b. surface mounted on 1" x 1" fr4 board with minimum copper, t = 5 s. c. refer to ipc/jedec (j-std-020c), no manual or hand soldering. d. maximum under steady state conditions is 185 c/w. e. maximum under steady state conditions is 330 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t a = 25 c i d 2.8 a a t a = 70 c 2.2 a t a = 25 c 2.0 b t a = 70 c 1.6 b pulsed drain current i dm 15 continuous source-drain diode current t a = 25 c i s 0.7 a t a = 25 c 0.4 b maximum power dissipation t a = 25 c p d 0.9 a w t a = 70 c 0.6 a t a = 25 c 0.5 b t a = 70 c 0.3 b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, d t 5 s r thja 105 135 c/w maximum junction-to-ambient b, e 200 260 features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? ultra small 0.8 mm x 0.8 mm outline ? ultra thin 0.357 mm height ? typical esd protection 1500 v ? compliant to rohs directive 2002/95/ec applications ? portable devices such as cell phones, smart phones and mp3 players - load switch - small signal switch
www.vishay.com 2 document number: 66700 s10-1046-rev. a, 03-may-10 vishay siliconix SI8800EDB new product notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 18 mv/c v gs(th) temperature coefficient v gs(th) /t j - 2.3 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.4 1.0 v gate-source leakage i gss v ds = 0 v, v gs = 4.5 v 0.5 a v ds = 0 v, v gs = 8 v 6 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 10 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1.0 a 0.066 0.080 v gs = 2.5 v, i d = 1.0 a 0.072 0.090 v gs = 1.8 v, i d = 1.0 a 0.082 0.105 v gs = 1.5 v, i d = 0.5 a 0.095 0.150 forward transconductance a g fs v ds = 10 v, i d = 1.0 a 10 s dynamic b total gate charge q g v ds = 10 v, v gs = 8 v, i d = 1.0 a 5.5 8.3 nc v ds = 10 v, v gs = 4.5 v, i d = 1.0 a 3.2 5.0 gate-source charge q gs 0.42 gate-drain charge q gd 0.5 gate resistance r g f = 1 mhz 1.0 k tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 10 i d ? 1.0 a, v gen = 4.5 v, r g = 1 65 130 ns rise time t r 85 170 turn-off delay time t d(off) 900 1800 fall time t f 350 700 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 10 i d ? 1.0 a, v gen = 8 v, r g = 1 25 50 rise time t r 40 80 turn-off delay time t d(off) 1100 2200 fall time t f 350 700 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 0.7 a pulse diode forward current i sm 15 body diode voltage v sd i s = 1.0 a, v gs = 0 v 1.0 1.5 v body diode reverse recovery time t rr i f = 1.0 a, di/dt = 100 a/s, t j = 25 c 13 25 ns body diode reverse recovery charge q rr 510nc reverse recovery fall time t a 8 ns reverse recovery rise time t b 5
document number: 66700 s10-1046-rev. a, 03-may-10 www.vishay.com 3 vishay siliconix SI8800EDB new product typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current - gate current (ma) i gss v gs - gate-to-source voltage (v) 0.0 0.3 0.6 0.9 1.2 1.5 03691215 t j = 25 c 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5vthru2v v gs =1v v gs =1.5v v ds - drain-to-source voltage (v) - drain current (a) i d 0.00 0.03 0.06 0.09 0.12 0.15 0 3 6 9 12 15 v gs =1.8v v gs =1.5v v gs =2.5v v gs =4.5v - on-resistance ( ) r ds(on) i d - drain current (a) gate current vs. gate-source voltage transfer characteristics gate charge - gate current (a) i gss v gs - gate-to-source voltage (v) 10 -11 10 -9 10 -7 10 -5 10 -3 10 -1 0 3 6 9 12 15 t j = 150 c t j = 25 c 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 2 4 6 8 0123456 i d =1a v ds =5v v ds =16v v ds =10v - gate-to-source voltage (v) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 66700 s10-1046-rev. a, 03-may-10 vishay siliconix SI8800EDB new product typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =1.5v;i d =0.5a t j - junction temperature (c) (normalized) - on-resistance r ds(on) v gs =4.5v,v gs =2.5v,v gs =1.8v;i d =1a 0.04 0.06 0.08 0.10 0.12 0.14 012345 i d = 0.5 a; t j = 25 c i d = 1.5 a; t j = 125 c i d = 0.5 a; t j = 125 c i d = 1.5 a; t j = 25 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 10 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperature (c) single pulse power (junction-to-ambient) 0 2 4 6 8 10 12 14 power (w) time (s) 10 1000 0.1 0.01 0.001 100 1
document number: 66700 s10-1046-rev. a, 03-may-10 www.vishay.com 5 vishay siliconix SI8800EDB new product typical characteristics 25 c, unless otherwise noted note: when mounted on 1" x 1" fr4 with full copper. * the power dissipation p d is based on t j(max) = 150 c, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a =25 c single pulse limited by r ds(on) * bvdss limited 1ms 100 s 10 ms v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d 100 ms, 1 s 10 s, dc current derating* 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t a - ambient temperature (c) i d - drain current (a) power derating 0.0 0.2 0.4 0.6 0.8 25 50 75 100 125 150 t a - ambient temperature (c) power dissipation (w)
www.vishay.com 6 document number: 66700 s10-1046-rev. a, 03-may-10 vishay siliconix SI8800EDB new product typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction -to-ambient (on 1" x 1" fr4 board with maximum copper) 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja =185 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 normalized thermal transient impedance, junction-t o-ambient (on 1" x 1" fr4 board with minimum copper) 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja =330 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05
document number: 66700 s10-1046-rev. a, 03-may-10 www.vishay.com 7 vishay siliconix SI8800EDB new product package outline micro foot 0.8 mm x 0.8 mm: 4- bump (2 x 2, 0.4 mm pitch) notes (unless otherwise specified): 1. all dimensions are in millimeters. 2. four (4) solder bumps are lead (pb)-f ree 95.5sn/3.5ag/0.7cu with diameter ? 0.165 mm to ? 0.185 mm. 3. backside surface is coated with a ti/ni/ag layer. 4. non-solder mask defined copper landing pad. 5. is location of pin 1. notes: a. use millimeters as the primary measurement. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66700 . 4 x ? b d e s a a1 a2 s d e xxx mark on backside of die s g d s 800 3 4 1 2 e e 4 x ? 0.205 to 0.225 note 4 solder mask ~ ? 0.215 recommended land dim. millimeters a inches min. nom. max. min. nom. max. a 0.314 0.357 0.400 0.0124 0.0141 0.0157 a 1 0.127 0.157 0.187 0.0050 0.0062 0.0074 a 2 0.187 0.200 0.213 0.0074 0.0079 0.0084 b 0.165 0.175 0.185 0.0064 0.0068 0.0072 e 0.400 0.0157 s 0.180 0.200 0.220 0.0070 0.0078 0.0086 d 0.760 0.800 0.840 0.0299 0.0314 0.0330
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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