transistor (npn) features z complementary to s9015 marking: j6 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 45 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.1 a p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 45 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =50 v , i e =0 0.1 a collector cut-off current i ceo v ce =35v , i b =0 0.1 a emitter cut-off current i ebo v eb = 3v , i c =0 0.1 a dc current gain h fe v ce =5v, i c = 1ma 200 1000 collector-emitter saturation voltage v ce (sat) i c =100 ma, i b = 5ma 0.3 v base-emitter saturation voltage v be (sat) i c =100 ma, i b = 5ma 1 v transition frequency f t v ce =5v, i c = 10ma f= 30mhz 150 mhz classification of h fe rank l h range 200-450 450-1000 so t -23 1. base 2. emitter 3. collector s901 4 1 date:2011/05 www.htsemi.com semiconductor jinyu
2 date:2011/05 www.htsemi.com semiconductor jinyu s901 4
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