silicon planar epitaxial pnp transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9226 issue 2 page 1 of 3 2n5415csm4 2n5416csm4 silicon planar pnp transistor hermetic ceramic surface mounted package. hi-rel screening options available absolute maximum ratings (t a = 25c unless otherwise stated) 2n5415 2n5416 v cbo collector ? base voltage -200v -350v v ceo collector ? emitter voltage -200v -300v v ebo emitter ? base voltage -4v -6v i c continuous collector current 1.0a i b base current 0.5a p d total power dissipation at t a = 25c 1.0w t j junction temperature range 175c t stg storage temperature range -65 to +200c thermal properties (each device) symbols parameters max. units r ja thermal resistance, junction to ambient 150 c/w
silicon planar epitaxial pnp transistor 2n5415csm4, 2n5416csm4 se sese semelab limited melab limited melab limited melab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9226 issue 2 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units i c = -10ma 2n5415 2n5415 2n5415 2n5415 -200 v (br)ceo (1) collector-emitter breakdown voltage i c = -10ma 2n5416 2n5416 2n5416 2n5416 -300 r be = 50 w v (br)cer (1) collector-emitter breakdown voltage i c = -50ma 2n5416 2n5416 2n5416 2n5416 -350 v i ceo (1) collector cut-off current i b = 0 v ce = -150v -50 v cb = -175v 2n5415 2n5415 2n5415 2n5415 -50 i cbo (1) collector-base cut-off current v cb = -280v 2n5416 2n5416 2n5416 2n5416 -50 v eb = -4v 2n5415 2n5415 2n5415 2n5415 -20 i ebo (1) emitter cut-off current v eb = -6v 2n5416 2n5416 2n5416 2n5416 -20 a v ce(sat) collector-emitter saturation voltage i c = -50ma i b = -5ma -0.5 v be (1) base-emitter voltage i c = -50ma v ce = -10v -1.5 v i c = -50ma v ce = -10v 2n5415 2n5415 2n5415 2n5415 30 150 i c = -50ma h fe (1) dc current gain v ce = -10v 2n5416 2n5416 2n5416 2n5416 30 120 - dynamic characteristics symbols parameters test conditions min. typ max. units f t transition frequency i c = -10ma v ce = -10v f =5mhz 15 mhz c obo output capacitance v cb = -10v i e = 0 f =1.0mhz 25 pf h fe small signal current gain i c = -5ma v ce = -10v f =1.0khz 25 - notes notes notes notes (1) pulse width 300us, 2%
silicon planar epitaxial pnp transistor 2n5415csm4, 2n5416csm4 se sese semelab limited melab limited melab limited melab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9226 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) 1 2 34 5.59 0.13 (0.22 0.005) 0.23 (0.009) rad. 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) 1.40 0.15 (0.055 0.006) 0.25 0.03 (0.01 0.001) 0.23 (0.009) min. 1 . 27 0 . 05 ( 0 . 05 0 . 002 ) 3 . 81 0 . 13 ( 0 . 15 0 . 005 ) 0 . 64 0 . 08 ( 0 . 025 0 . 003 ) lcc3 (mo-041ba) underside view pad 1 ? collector pad 3 ? emitter pad 2 ? n/c pad 4 ? base
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