technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel mosfet qualified per mil-prf-19500/564 t4-lds-0009 rev. 2 (091456) page 1 of 4 devices levels 2n6849 2N6849U jan jantx jantxv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain ? source voltage v ds -100 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 -6.5 adc continuous drain current t c = +100c i d2 -4.1 adc max. power dissipation p tl 25 (1) w drain to source on state resistance r ds(on) 0.3 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 0.2 w/c for t c > +25c (2) v gs = -10vdc, i d = -4.1a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = -1madc v (br)dss -100 vdc gate-source voltage (threshold) v ds v gs , i d = -0.25ma v ds v gs , i d = -0.25ma, t j = +125c v ds v gs , i d = -0.25ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 -2.0 -1.0 -5.0 -4.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = -80v v gs = 0v, v ds = -80v, t j = +125c i dss1 i dss2 -25 -0.25 adc madc static drain-source on-state resistance v gs = -10v, i d = -4.1a pulsed v gs = -10v, i d = -6.5a pulsed t j = -125c v gs = -10v, i d = -4.1a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0.3 0.32 0.54 diode forward voltage v gs = 0v, i d = -6.5a pulsed v sd -4.3 vdc 2n6849 to-205af (formerly to-39) see figure 1 2n3849u 18 pin lcc see figure 2
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel mosfet qualified per mil-prf-19500/564 t4-lds-0009 rev. 2 (091456) page 2 of 4 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = -10v, i d = -6.5a v ds = -50v q g(on) q gs q gd 34.8 6.8 23.1 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = -6.5a, v gs = -10vdc, gate drive impedance = 7.5 , v dd = -40vdc t d(on) t r t d(off) t f 60 140 140 140 ns diode reverse recovery time di/dt -100a/s, v dd -50v, i f = -6.5a t rr 250 ns
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel mosfet qualified per mil-prf-19500/564 t4-lds-0009 rev. 2 (091456) page 3 of 4 figure 1 ? case outline and pin configuration for 2n6849
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel mosfet qualified per mil-prf-19500/564 t4-lds-0009 rev. 2 (091456) page 4 of 4 figure 2 ? case outline and pin configuration for 2N6849U
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