2005. 12. 2 1/3 semiconductor technical data ktc3209 epitaxial planar npn transistor revision no : 1 power amplifier applications. power switching applications. features low collector saturation voltage : v ce(sat) =0.5v(max.) (i c =1a) high speed switching time : t stg =1.0 s(typ.) complementary to kta1281. maximum rating (ta=25 ) electrical characteristics (ta=25 ) note : h fe classification 0:70 140, y:120 240 characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 2 a emitter current i e -2 a collector power dissipation p c 1 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 50 - - v emitter-base breakdown voltage v (br)ebo i e =100ma, i b =0 5 - - v dc current gain h fe (1) (note) v ce =2v, i c =0.5a (note) 70 - 240 h fe (2) (note) v ce =2v, i c =1.5a 40 - - collector-emitter saturation voltage v ce(sat) i c =1a, i b =0.05a - - 0.5 v base-emitter saturation voltage v be(sat) i c =1a, i b =0.05a - - 1.2 v transition frequency f t v ce =2v, i c =0.5a - 100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 30 - pf switching time turn-on time t on - 0.1 - s storage time t stg - 1.0 - fall time t f - 0.1 -
2005. 12. 2 2/3 ktc3209 revision no : 1
2005. 12. 2 3/3 ktc3209 revision no : 1
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