unisonic technologies co., ltd mpsa44h npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r201-083.c high voltage transistor ? features * collector-emitter voltage: * v ceo =400v * collector current up to 300ma ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 mpsa44hl-ab3-r mpsa44hg-ab3-r sot-89 b c e tape reel mpsa44hl-t92-b mpsa44hg-t92-b to-92 e b c tape box mpsa44hl-t92-k mpsa44hg-t92-k to-92 e b c bulk mpsa44hl-t92-r MPSA44HG-T92-R to-92 e b c tape reel
mpsa44h npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-083.c ? absolute maximum rating parameter symbol ratings unit collector-base voltage v cbo 800 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 6 v collector current i c 300 ma collector dissipation sot-89 p c 500 mw to-92 625 junction temperature t j 125 c operating temperature t opr -20 ~ +85 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 on characteristics dc current gain (note) h fe v ce =10v, i c =1ma 40 240 v ce =10v, i c =10ma 82 240 v ce =10v, i c =50ma 45 240 v ce =10v, i c =100ma 40 240 collector-emitter satu ration voltage v ce(sat) i c =1ma, i b =0.1ma 0.4 v i c =10ma, i b =1ma 0.5 i c =50ma, i b =5ma 0.75 base-emitter satura tion voltage v be(sat) i c =10ma, i b =1ma 0.75 v small-signal characteristics current gain bandwidth product f t v ce =20v,i c =10ma, f=100mhz 50 mhz output capacitance c ob v cb =20v, i e =0 f=1mhz 7 pf note: pulse test: p w <300 s, duty cycle<2%
mpsa44h npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-083.c ? typical characteristics on voltage collector current, i c (ma) 0 0.2 0.4 0.6 0.8 1.0 collector saturationregion base current, i b (a) 0 0.2 0.4 0.3 0.1 0.5 i c =1ma i c =10ma i c =50ma 10 -1 10 3 10 0 10 1 10 2 t a =25 v be(sat) ,i c /i b =10 v be(on) ,v ce =10v v ce(sat) ,i c /i b =10 t a =25 10 1 10 5 10 2 10 3 10 4
mpsa44h npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-083.c ? typical characteristics(cont.) collector current, i c (ma) collector voltage (v) small signal current gain, h fe high frequency current gain safe operating area collector current, i c (ma) 10 2 10 1 10 0 10 -1 v ce =10v f=10mhz t a =25 c 10 -1 10 3 10 0 10 1 10 2 valid duty cycle<10% 1ms 0.1ms 1s t c = 25 c t a =25 c 10 3 10 1 10 0 10 0 10 4 10 1 10 2 10 3 10 2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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