regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
feb.1999 FS50KMJ-06 outline drawing dimensions in mm to-220fn mitsubishi nch power mosfet FS50KMJ-06 high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. 15 0.314 0.5 10 0.3 2.8 0.2 f 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.252.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.33.6 0.3 6.5 0.3 123 q gate w drain e source e w q e v v a a a a a w c c v g 60 20 50 200 50 50 200 30 C55 ~ +150 C55 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 100 m h ac for 1minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v dss v gss i d i dm i da i s i sm p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 4v drive v dss ................................................................................. 60v r ds (on) (max) ............................................................. 20m w i d ........................................................................................ 50a integrated fast recovery diode (typ.) ............ 70ns v iso ............................................................................... 2000v
feb.1999 v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr mitsubishi nch power mosfet FS50KMJ-06 high-speed switching use v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 60 1.0 1.5 15 18 0.38 41 3000 580 300 22 65 250 160 1.0 70 0.1 0.1 2.0 20 24 0.50 1.5 4.17 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 60v, v gs = 0v i d = 1ma, v ds = 10v i d = 25a, v gs = 10v i d = 25a, v gs = 4v i d = 25a, v gs = 10v i d = 25a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 30v, i d = 25a, v gs = 10v, r gen = r gs = 50 w i s = 25a, v gs = 0v channel to case i s = 50a, dis/dt = C100a/ m s performance curves 0 10 20 30 40 50 0 20050 100 150 0 20 40 60 80 100 012345 v gs = 10v t c = 25? pulse test 4v 5v 3v p d = 30w 10 0 3 5 7 10 1 2 3 5 7 10 2 2 3 2 3 5 7 10 0 210 1 357357 2 10 2 357 23 t c = 25? single pulse tw = 10 m s 100 m s 1ms 10ms dc 100ms power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 5v v gs = 10v 4v t c = 25? pulse test 3.5v 2.5v p d = 30w 3v
feb.1999 mitsubishi nch power mosfet FS50KMJ-06 high-speed switching use 0 20 40 60 80 100 0246810 t c = 25 c v ds = 10v pulse test 10 0 10 1 23 57 10 2 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 t c = 25 c 75 c 125 c v ds = 10v pulse test 0 0.4 0.8 1.2 1.6 2.0 0246810 i d = 80a t c = 25 c pulse test 50a 20a 0 10 20 30 40 50 10 0 357 2 10 1 357 2 10 2 357 23 v gs = 4v t c = 25 c pulse test 10v 10 2 3 5 7 10 3 2 3 5 7 10 3 2 3 2 5 7 10 0 210 1 357357 2 10 2 357 23 2 ciss crss coss t ch = 25 c f = 1mh z v gs = 0v 10 0 10 1 23 57 10 2 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t d(off) t r t ch = 25 c v dd = 30v v gs = 10v r gen = r gs = 50 w t f t d(on) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
feb.1999 mitsubishi nch power mosfet FS50KMJ-06 high-speed switching use 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2.0 t c = 125 c 75 c 25 c v gs = 0v pulse test 0 2 4 6 8 10 0 20406080100 v ds = 10v 20v 40v t ch = 25 c i d = 50a 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?0 0 5 0 100 150 v gs = 10v i d = 1/2i d pulse test 0 0.8 1.6 2.4 3.2 4.0 ?0 0 5 0 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 5 0 100 150 v gs = 0v i d = 1ma 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? single pulse 0.5 0.2 0.1 0.05 0.02 0.01 d = 1.0 p dm tw d = t tw t gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c)
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