1996. 11. 19 1/3 semiconductor technical data KTB1370 triple diffused pnp transistor revision no : 1 high current switching applications. power amplifier applications. features high collector current : i c =-7a. low collector-emitter saturation voltage. : v ce(sat) =-0.5v(max.) at i c =-4a. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) note : h fe (1) classification o:70 140 , y:120 240 characteristic symbol rating unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -7 a base current i b -1 a collector power dissipation (tc=25 1 ) p c 30 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-100v, i e =0 - - -5 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -5 a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -80 - - v dc current gain h fe (1) (note) v ce =-1v, i c =-1a 70 - 240 h fe (2) v ce =-1v, i c =-4a 30 - - collector-emitter saturation voltage v ce(sat) i c =-4a, i b =-0.4a - -0.3 -0.5 v base-emitter saturation voltage v be(sat) i c =-4a, i b =-0.4a - -0.9 -1.4 v transition frequency f t v ce =-4v, i c =-1a - 10 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 250 - pf switching time turn-on time t on - 0.4 - s storage time t stg - 2.5 - fall time t f - 0.5 - i b1 10 ? b1 -i cc v =-30v i b2 i b2 20 s -i =i =0.3a 1% b1 b2 output duty cycle < =
1996. 11. 19 2/3 KTB1370 revision no : 1 c collector current i (a) 0 0 collectpr-emitter voltage v (v) ce ce c i - v h - i c collector current i (a) -0.02 -1 -0.1 -10 fe dc current gain h collector-emitter voltage 0 v (v) ce 0 collector current i (a) c v - i ce c -2 -4 -6 -8 -10 -2 -4 -6 -8 -10 common emitter tc=25 c i =-20ma b -200 -180 -160 -140 -120 -100 -80 -60 -40 0 -1 -2 -3 -4 -5 -6 -7 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 common emitter tc=25 c i =-20ma b -40 -100 -200 -30 0 -400 -500 -600 -700 -2 0 0 common emitter c collector current i (a) collector-emitter voltage 0 0-1 -1.0 -1.2 -0.8 -0.4 -0.2 -0.6 v (v) ce -2 -3 -4 -5 i =-20ma b -40 -100 tc=100 c v - i ce c -6 -7 -600 -400 -500 -700 -300 -200 -30 0 collector-emitter voltage collector current i (a) -0.8 -0.4 -0.2 -0.6 ce v (v) 0 0 -1 -2 -3 -4 -5 -6 c -7 -700 -600 -500 -4 0 0 -1.0 -1.2 common emitter v - i ce i =-20ma b - 1 0 0 tc=-55 c c -150 fe c -0.3 -3 10 30 100 300 1k 50 500 common emitter v =-1v ce tc=100 c tc=25 c tc=-55 c collector current i (a) collector-emitter saturation -0.02 -0.01 -0.05 -0.03 -0.1 -0.5 -0.3 -1 tc=-55 c -0.3 -0.1 -1 -10 -3 c v =-1v common emitter tc=25 c tc=100 c v - i ce(sat) ce c v (v) ce(sat)
1996. 11. 19 3/3 KTB1370 revision no : 1 collector current i (a) 0 c 0 base-emitter voltage v (v) be be c i - v v - i c collector current i (a) -0.02 -0.1 -0.3 -0.1 be(sat) base-emitter saturation collector current i (a) -1 c -0.1 collector-emitter voltage v (v) -3 -10 -30 ce safe operating area be(sat) c voltage v (v) -1 -10 -3 -0.3 -0.5 -1 -3 -5 -10 common emitter i /i =10 c b tc=-55 c tc=25 c tc=100 c -0.8 -1.6 -2.4 -3.2 -2 -4 -6 common emitter v =-1v ce tc =1 0 0 c tc=25 c tc=-55 c -100 -200 -0.3 -0.5 -1 -3 -5 -10 -20 single nonrepetive pulsed tc=25 c curves must be derated linerly with increase in temperature. * i max.(pulsed) c i max. c (continuous) dc operatio n tc =25 c v max. ceo 1ms 10ms 100ms * * * *
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