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| inchange semiconductor product specification silicon pnp power transistors BD810 description ? ? with to-220c package ? complement to type bd809 ? dc current gain : h fe = 30 (min) @ i c = 2.0 adc applications ? designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i b base current -6 a p d total power dissipation t c =25 ?? 90 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.39 ??/w
inchange semiconductor product specification 2 silicon pnp power transistors BD810 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.1a; i b =0 -80 v v cesat collector-emitter saturation voltage i c =-3 a;i b =-0.3 a -1.1 v v be base-emitter voltage i c =-4a ; v ce =-2v -1.6 v i cbo collector cut-off current v cb =-80v; i e =0 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-2a ; v ce =-2v 30 h fe-2 dc current gain i c =-4a ; v ce =-2v 15 f t transition frequency i c =-1a ; v ce =-10v;f=1.0mhz 1.5 mhz inchange semiconductor product specification 3 silicon pnp power transistors BD810 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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