npn power silicon switching transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limi semelab limi semelab limi semelab limited tedted ted coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8767 issue 2 page 1 of 3 2N5665N1 hermetic smd0.5 ceramic surface mount. ideally suited for power amplifier and switching app lications. screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 400v v ceo collector ? emitter voltage 300v v ebo emitter ? base voltage 6v i c continuous collector current 5a i b base current 1.0a p d total power dissipation at t c = 25c 76w derate above 25c 0.43w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case - t c = 25c 2.3 c/w
npn power silicon switching transistor 2N5665N1 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8767 issue 2 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)cer (1) collector-emitter breakdown voltage i c = 1.0ma r be = 100 w 400 v (br)ebo (1) emitter-base breakdown voltage i e = 10 m a i c = 0a 6 v v ce = 300v 0.2 i ces collector-emitter cut-off current t a = 150c 100 v cb = 300v 0.1 m a i cbo collector-base cut-off current v cb = 400v 1.0 ma i c = 0.5a v ce = 2v 25 v ce = 5v 25 75 i c = 1.0a t a = -55c 10 i c = 3a v ce = 5v 10 h fe (1) forward-current transfer ratio i c = 5a v ce = 5v 5 - i c = 3a i b = 0.6a 0.4 v ce(sat) (1) collector-emitter saturation voltage i c = 5a i b = 1.0a 1.0 i c = 3a i b = 0.6a 1.2 v be(sat) (1) base-emitter saturation voltage i c = 5a i b = 1.0a 1.5 v dynamic characteristics i c = 0.5a v ce = 5v | h fe | magnitude of common- emitter small-signal short- circuit forward current, transfer ratio f = 10mhz 2 7 - v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 120 pf t on turn-on time i c = 1.0a v cc = 100v 4 t off turn-off time i b1 = - i b2 = 50ma 2.5 s notes notes notes notes (1) pulse width 300us, 2%
npn power silicon switching transistor 2N5665N1 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8767 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) 2 1 3 2.41 (0.095) (0.030) min. 3.05 (0.120) 5.72 (.225) 0.127 (0.005) (0.296) 10.16 (0.400) 0.76 (0.030) min. 3.175 (0.125) max. 0.50 (0.020) max. 7.54 0.76 2.41 (0.095) 0.127 (0.005) (0.286) 7.26 16 plcs 0.50(0.020) 0.127 (0.005) smd0.5 (to - 276aa) underside view pad 1 ? emitter pad 2 ? collector pad 3 - base
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