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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD2406 description collector-emitter breakdown voltage- : v (br)ceo = 80v(min) collector power dissipation- : p c = 25w@ t c = 25 good linearity of h fe applications designed for power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 4 a i b base current-continuous 0.4 a p c collector power dissipation @t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD2406 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.5 v v be (on) base-emitter on voltage i c = 3a; v ce = 5v 1.5 v i cbo collector cutoff current v cb = 80v; i e = 0 30 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe-1 dc current gain i c = 0.5a; v ce = 5v 70 240 h fe-2 dc current gain i c = 3a; v ce = 5v 15 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 90 pf f t current-gain?bandwidth product i c = 0.5a; v ce = 5v 8 mhz ? h fe- 1 classifications o y 70-140 120-240 isc website www.iscsemi.cn 2 |
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