features trenchfet power mosfet 100% r g tested rohs compliant applications dc/dc conversion, low-side ? desktop pc sur50n025-06p vishay siliconix new product document number: 73364 s-50932?rev. a, 09-may-05 www.vishay.com 1 n-channel 25-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) a, e q g (typ) 25 0.0062 @ v gs = 10 v 78 20 5 nc 25 0.010 @ v gs = 4.5 v 62 20 . 5 n c to-252 reverse lead dpak top view drain connected to tab ordering information: sur50n025-06p?e3 (lead (pb)-free) sur50n025-06p-t4?e3 (lead (pb)-free, alternate tape orientation) s gd n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 25 v gate-source v oltage v gs 20 v t c = 25 c 78 a, e continuous drain current (t j = 175 c) t c = 70 c i d 65 a, e continuous drain current (t j = 175 c) t a = 25 c i d 32 b, c t a = 70 c 25 b, c a pulsed drain current i dm 100 a continuous source drain diode current t c = 25 c i s 43 continuous source-drain diode current t a = 25 c i s 7.1 b, c avalanche current pulse l = 0 1 mh i as 35 single pulse avalanche energy l = 0.1 mh e as 61.25 mj t c = 25 c 65 a maximum power dissipation t c = 70 c p d 45 a w maximum power dissipation t a = 25 c p d 10.7 b, c w t a = 70 c 7.5 b, c operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 sec r thja 11 14 c/w maximum junction-to-case steady state r thjc 1.9 2.3 c/w notes: a. based on t c = 25 c. b. surface mounted on 1? x 1? fr4 board. c. t = 10 sec d. maximum under steady state conditions is 90 c/w. e. calculated based on maximum junction temperature. package limitation current is 50 a.
sur50n025-06p vishay siliconix new product www.vishay.com 2 document number: 73364 s-50932?rev. a, 09-may-05 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 25 v v ds temperature coefficient v ds /t j i d = 250 a 20 mv/ c v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ? 5.5 m v/ c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.4 2.4 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 25 v, v gs = 0 v 1 a z ero g a t e v o lt age d ra i n c urren t i dss v ds = 25 v, v gs = 0 v, t j = 55 c 10 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 50 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0051 0.0062 drain - so u rce on - state resistance a r ds(on) v gs = 4.5 v, i d = 15 a 0.0081 0.010 forward t ransconductance a g fs v ds = 15 v, i d = 15 a 55 s dynamic b input capacitance c iss 2490 output capacitance c oss v ds = 12 v, v gs = 0 v, f = 1 mhz 530 pf reverse transfer capacitance c rss 280 total gate charge q g v ds = 12 v, v gs = 10 v, i d = 50 a 44 66 t o t a l g a t e ch arge q g 20.5 31 nc gate-source charge q gs v ds = 12 v, v gs = 4.5 v, i d = 50 a 7.5 n c gate-drain charge q gd 7.0 gate resistance r g f = 1 mhz 0.55 1.1 1.65 turn-on delay time t d(on) 19 28 rise time t r v dd = 12 v, r l = 0.24 12 18 turn-off delay time t d(off) v dd = 12 v , r l = 0 . 24 i d 50 a, v gen = 4.5 v, r g = 1 18 27 fall time t f 7 11 ns turn-on delay time t d(on) 9 14 ns rise time t r v dd = 12 v, r l = 0.24 11 16.5 turn-off delay time t d(off) v dd = 12 v , r l = 0 . 24 i d 50 a, v gen = 10 v, r g = 1 24 36 fall time t f 8 12 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 43 a pulse diode forward current a i sm 100 a body diode voltage v sd i s = 30 a 0.9 1.5 v body diode reverse recovery time t rr 30 45 ns body diode reverse recovery charge q rr i f = 20 a di/dt = 100 a/ s t j = 25 c 20 30 nc reverse recovery fall time t a i f = 20 a , di/dt = 100 a/ s, t j = 25 c 13.5 ns reverse recovery rise time t b 16.5 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
sur50n025-06p vishay siliconix new product document number: 73364 s-50932?rev. a, 09-may-05 www.vishay.com 3 typical characteristics (25 c unless noted) 0.000 0.004 0.008 0.012 0.016 0.020 0 20406080100 0 2 4 6 8 10 0 1020304050 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 175 0 400 800 1200 1600 2000 2400 2800 3200 0 5 10 15 20 25 c rss c oss c iss i d = 50 a v gs = 10 v v gs = 10 v gate charge on-resistance vs. drain current and gate voltage ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) v gs = 4.5 v r ds(on) ? on-resiistance (normalized) 0 4 8 12 16 20 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 0.0 0.4 0.8 1.2 1.6 2.0 v gs = 10 thru 5 v 25 c t c = 125 c ? 55 c 3 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d r ds(on) ? on-resistance (m ) v ds = 12 v v gs = 4.5 v i d = 20 a v ds = 18 v 4 v 2 v
sur50n025-06p vishay siliconix new product www.vishay.com 4 document number: 73364 s-50932?rev. a, 09-may-05 typical characteristics (25 c unless noted) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 2345678910 1.0 1.2 0.001 10 100 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s i d = 20 a on-resistance vs. gate-to-source voltage v gs ? gate-to-source voltage (v) ? 1.2 ? 0.9 ? 0.6 ? 0.3 0.0 0.3 0.6 ? 50 ? 25 0 25 50 75 100 125 150 175 i d = 250 a threshold voltage t j ? temperature ( c) 0 480 720 120 240 power (w) time (sec) 600 10 1000 0.1 0.01 0.001 single pulse power, junction-to-ambient r ds(on) ? drain-to-source on-resistance ( ) v gs(th) (v) t j = 25 c t j = 125 c 1 0.1 0.01 t a = 25 c 360 100 1 safe operating area, junction-to-case 1000 10 0.1 1 10 100 0.1 100 ? drain current (a) i d 1 1 ms t c = 25 c single pulse 10 ms 100 ms, dc *limited by r ds(on) v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 10 s 100 s
sur50n025-06p vishay siliconix new product document number: 73364 s-50932?rev. a, 09-may-05 www.vishay.com 5 typical characteristics (25 c unless noted) 1000 1 0.00001 0.001 0.1 1 0.1 0.0001 0 15 30 45 60 75 90 0 25 50 75 100 125 150 175 current de-rating* i d ? drain current (a) t c ? case temperature ( c) t a ? time in avalanche (sec) single pulse avalanche capability i c ? peak avalanche current (a) *the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the packa ge limit. t a l i d bv
v dd 0.01 package limited 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 power de-rating t c ? case temperature ( c) power (w) 100 10
sur50n025-06p vishay siliconix new product www.vishay.com 6 document number: 73364 s-50932?rev. a, 09-may-05 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effecti ve transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effectiv e transient thermal impedance 0.05 0.02 single pulse vishay siliconix maintains worldw ide manufacturing capability. pr oducts may be manufactured at on e of several q ualified locati ons. reliability data fo r silicon te chnology and package reliability represent a co mposite of all qualifie d locations. for relate d documents such as pa ckage/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73364 .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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