1.2v drive pch mosfet RZB002P02 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) high speed switing. 2) ultra small package(vmn3). 3) ultra low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code t2l basic ordering unit (pieces) 8000 RZB002P02 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 20 v gate-source voltage v gss ? 10 v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s ? 100 ma pulsed i sp ? 800 ma power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a recommended land. parameter type source current (body diode) drain current parameter *2 *1 *1 * *2 *1 *1 vmn3 0.22 0.8 0.1 1.0 0.1 0.16 0.6 0.35 (1) (2) (3) 0.37 0.17 abbreviated symbol : yk (1) (2) (3) (1) gate (2) source (3) drain 1/5 2010.11 - rev.a www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RZB002P02 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? a drain-source breakdown voltage v (br)dss ? 20 - - v zero gate voltage drain current i dss -- ? 1 ? a gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v - 0.8 1.2 - 1.0 1.5 - 1.3 2.2 - 1.6 3.5 - 2.4 9.6 forward transfer admittance l y fs l 0.2 - - s input capacitance c iss - 115 - pf output capacitance c oss -10-pf reverse transfer capacitance c rss -6-pf turn-on delay time t d(on) -6-ns rise time t r -4-ns turn-off delay time t d(off) -17-ns fall time t f -17-ns total gate charge q g - 1.4 - nc gate-source charge q gs - 0.3 - nc gate-drain charge q gd - 0.3 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v *pulsed r l =100 ? r g =10 ? i d = ? 200ma, v dd ? 10v v gs = ? 4.5v v gs =0v f=1mhz i d = ? 100ma, v dd ? 10v v gs = ? 4.5v v ds = ? 10v v ds = ? 20v, v gs =0v v ds = ? 10v, i d = ? 100 ? a i d = ? 200ma, v gs = ? 4.5v i d = ? 100ma, v gs = ? 2.5v i d = ? 100ma, v gs = ? 1.8v i d = ? 40ma, v gs = ? 1.5v i d = ? 10ma, v gs = ? 1.2v i d = ? 200ma, v ds = ? 10v conditions i s = ? 200ma, v gs =0v parameter parameter static drain-source on-state resistance r ds (on) ? conditions v gs = ? 10v, v ds =0v i d = ? 1ma, v gs =0v * * * * * * * * * * * * * * * * * 2/5 2010.11 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RZB002P02 0 0.05 0.1 0.15 0.2 0246810 ta=25c pulsed v gs = -1.0v v gs = -1.2v v gs = -4.5v v gs = -2.5v v gs = -1.8v v gs = -1.5v 0 0.05 0.1 0.15 0.2 0 0.2 0.4 0.6 0.8 1 v gs = -2.5v v gs = -2.0v v gs = -1.8v v gs = -10.0v v gs = -4.5v v gs = -3.2v v gs = -1.2v v gs = -1.0v v gs = -1.5v ta=25c pulsed 0.0001 0.001 0.01 0.1 1 0 0.5 1 1.5 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -1.2v v gs = -1.5v v gs = -1.8v v gs = -2.5v v gs = -4.5v ta=25c pulsed 100 1000 10000 0.001 0.01 0.1 1 v gs = -2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -1.8v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 v gs = -1.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig.8 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 v gs = -1.2v pulsed ta=125c ta=75c ta=25c ta= -25c drain-current : -i d [a] fig.9 static drain-source on-state resistance vs. drain current( ) static drain - source on - state resistance : r ds (on)[m ? ] 3/5 2010.11 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RZB002P02 0 1 2 3 4 5 0246810 ta=25c pulsed i d = -0.01a i d = -0.2a 0.01 0.1 1 0 0.5 1 1.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 1 2 3 4 5 0 0.5 1 1.5 ta=25c v dd = -10v i d = -0.2a r g =10? pulsed 1 10 100 1000 0.01 0.1 1 10 100 coss crss ta=25c f=1mhz v gs =0v ciss 0.1 1.0 0.01 0.1 1 v ds = -10v pulsed ta=-25c ta=25c ta=75c ta=125 1 10 100 1000 0.01 0.1 1 t t t d (on t d (off ta=25c v dd = -10v v gs =-4.5v r g =10 ? pulsed fig.11 reverse drain current vs. sourse-drain voltage fig.12 static drain-source on-state resistance vs. gate source voltage fig.10 forward transfer admittance vs. drain current fig.14 dynamic input characteristics fig.15 typical capacitance vs. drain-source voltage fig.13 switching characteristics forward transfer admittance : |yfs| [s] drain-current : -i d [a] reverse drain current : -is [a] source-drain voltage : -v sd [v] static drain-source on-state resistance : r ds (on)[ ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] capacitance : c [pf] 4/5 2010.11 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
RZB002P02 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design es d protection circuit. fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd 5/5 2010.11 - rev.a data sheet www.rohm.com ?2010 rohm co., ltd. all rights reserved.
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
|
