inchange semiconductor isc product specification isc silicon pnp power transistor MJE171 description collector?emitter sustaining voltage : v ceo(sus) = -60v dc current gain : h fe = 30(min) @ i c = -0.5 a = 12(min) @ i c = -1.5 a complement to type mje181 applications low power audio amplifier applications. low current high speed sw itching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -7 v i c collector current-continuous -3 a i cm collector current-peak -6 a i b b base current -1 a collector power dissipation t a =25 1.5 p c collector power dissipation t c =25 12.5 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 10 /w r th j-a thermal resistance,junction to ambient 83.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor MJE171 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -10ma; i b = 0 -60 v v ce (sat)-1 collector-emitter saturation voltage i c = -0.5 a ;i b = -50ma -0.3 v v ce (sat)-2 collector-emitter saturation voltage i c =-1.5a ;i b = -0.15 a -0.9 v v ce (sat)-3 collector-emitter saturation voltage i c = -3a ;i b =-0.6 a -1.7 v v be (sat)-1 base-emitter saturation voltage i c = -1.5a; i b = -0.15a b -1.5 v v be (sat)-2 base-emitter saturation voltage i c = -3a; i b = -0.6a b -2.0 v v be (on) base-emitter on voltage i c = -0.5a; v ce = -1v -1.2 v i cbo collector cutoff current v cb = -80v ; i e = 0 v cb = -80v ; i e = 0;t c = 150 -0.1 -0.1 a ma i ebo emitter cutoff current v eb = -7v; i c = 0 -0.1 a h fe-1 dc current gain i c = -0.1 a ; v ce = -1v 50 250 h fe-2 dc current gain i c = -0.5a ; v ce = -1v 30 h fe-3 dc current gain i c = -1.5 a ; v ce = -1v 12 f t current-gain?bandwidth product i c = -0.1 a; v ce = -10v; 50 mhz c ob output capacitance i e = 0; v cb = -10v;f test = 0.1mhz 60 pf isc website www.iscsemi.cn
|
