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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1293 description high collector current:: i c = -5a low collector saturation voltage : v ce(sat) = -1.0v(max)@i c = -3a wide area of safe operation complement to type 2sd1896 applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -5 a i cm collector current-peak -10 a p c total power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1293 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -1ma; i b = 0 b -100 v v (br)cbo collector-base breakdown voltage i c = -50 a; i e = 0 -100 v v (br)ebo emitter-base breakdown voltage i e = -50 a; i c = 0 -5 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -1.0 v v be (sat) base-emitter saturation voltage i c = -3a; i b = -0.3a b -1.5 v i cbo collector cutoff current v cb = -100v; i e = 0 -10 a i ebo emitter cutoff current v eb = -4v; i c = 0 -10 a h fe dc current gain i c = -1a; v ce = -5v 60 320 c ob output capacitance i e =0; v cb = -10v; f= 1mhz 120 pf f t current-gain?bandwidth product i e = 0.5a; v ce = -5v 12 mhz ? h fe classifications d e f 60-120 100-200 160-320 isc website www.iscsemi.cn 2 |
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