3DD13005 4a , 700v npn plastic-encapsulated transistor elektronische bauelemente 2-nov-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features power switching applications absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 700 v collector to emitter voltage v ceo 400 v emitter to base voltage v ebo 9 v collector current - continuous i c 4 a collector power dissipation p c 2 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 700 - - v i c =1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 400 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 9 - - v i e =1ma, i c =0 collector cut C off current i cbo - - 1 ma v cb =700v, i e =0 i ceo - - 0.1 v ce =400v, i b =0 emitter cut C off current i ebo - - 0.05 ma v eb =7v, i c =0 dc current gain h fe 20 - 30 v ce =5v, i c =1a 5 - - v ce =5v, i c =10ma collector to emitter saturation voltage v ce(sat)1 - - 0.3 v i c =1a, i b =0.2a v ce(sat)2 - - 0.8 v i c =4a, i b =1a base to emitter saturation voltage v be(sat) - - 1.6 v i c =2a, i b =0.5a transition frequency f t 5 - - mhz v ce =10v, i c =500ma, f =1mhz fall time t f - - 0.6 s i b1 = -i b2 =0.4a, i c =2a, v cc =120v storage time t s 1.8 - 6.6 s i c =0.25a to-220j
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