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vishay siliconix SIP32411 document number: 66710 s11-1694-rev. e, 22-aug-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 2 a, 1.2 v, slew rate controlled load switch description the SIP32411 is a slew rate controlled load switch that is designed for 1.1 v to 5.5 v operation. the device guarantees low switch on-resistance at 1.2 v input. it features a controll ed soft-on slew rate of typical 150 s that limits the inrush current for designs of capacitive load or noise sensitive loads. the device features a low voltage control logic interface (on/off interface) that can inte rface with low voltage digital control without extra level shifting circuit. it also integrates an output discharge switch that enables fast shutdown load discharge. when the switch is off, it provides the reverse blocking to prevent high current flowing into the power source. the SIP32411dn is in tdfn4 package of 1.2 mm by 1.6 mm. it supports over 2 a of continuous current. the SIP32411dr is in sc70-6 package. features ? halogen-free accord ing to iec 61249-2-21 definition ? 1.1 v to 5.5 v operation voltage range ?62 m ? typical from 2 v to 5 v for SIP32411dn ?101 m ? typical from 2 v to 5 v for SIP32411dr ?low r on down to 1.2 v ? slew rate controlled turn-on: 150 s at 3.6 v ? fast shutdown load discharge ? low quiescent current < 1 a when disabled 6.7 a at v in = 1.2 v ? switch off reversed blocking ? compliant to rohs directive 2002/95/ec applications ? cellular phones ? portable media players ? digital camera ?gps ? computers ? portable instrument s and healthcare devices typical application circuit figure 1 - SIP32411 typical application circuit SIP32411 i n v out out v i n g n d g n d g n d e n e n c 4.7 f i n c 0.1 f out
www.vishay.com 2 document number: 66710 s11-1694-rev. e, 22-aug-11 vishay siliconix SIP32411 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: x = lot code ge3 and ge4 denote halogen-free and rohs compliant notes: a. device mounted with all leads and power pad so ldered or welded to pc board, see pcb layout. b. derate 4.5 mw/c above t a = 70 c, see pcb layout. c. derate 5.9 mw/c above t a = 70 c, see pcb layout. stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating/conditions for extended periods may affect device reliability. ordering information temperature range package marking part number - 40 c c to 85 c sc70-6 mbxx SIP32411dr-t1-ge3 tdfn4 1.2 mm x 1.6 mm aex SIP32411dnp-t1-ge4 absolute maximum ratings parameter limit unit supply input voltage (v in ) - 0.3 to 6 v enable input voltage (v en ) - 0.3 to 6 output voltage (v out ) - 0.3 to v in + 0.3 maximum continuous switch current (i max. ) sc70-6 package 1.8 a tdfn4 1.2 mm x 1.6 mm 2.4 maximum pulsed current (i dm ) v in (pulsed at 1 ms, 10 % duty cycle) sc70-6 package 2.2 tdfn4 1.2 mm x 1.6 mm 3 esd rating (hbm) 4000 v junction temperature (t j ) - 40 to 125 c thermal resistance ( ? ja ) a 6 pin sc70-6 b 240 c/w 4 pin tdfn4 1.2 mm x 1.6 mm c 170 power dissipation (p d ) a 6 pin sc70-6 b 230 mw 4 pin tdfn4 1.2 mm x 1.6 mm c 324 recommended operating range parameter limit unit input voltage range (v in ) 1.1 to 5.5 v operating temperature range - 40 to 85 c
document number: 66710 s11-1694-rev. e, 22-aug-11 www.vishay.com 3 vishay siliconix SIP32411 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. the algebraic convention whereby the most negative value is a minimu m and the most positive a maximum. b. typical values are for design aid only, not guaranteed nor subject to production testing. c. for v in outside this range consult ty pical en threshold curve. d. not tested, guarantee by design. specifications parameter symbol test conditions unless specified v in = 5 v, t a = - 40 c to 85 c (typical values are at t a = 25 c) limits - 40 c to 85 c unit min. a typ. b max. a operating voltage c v in 1.1 - 5.5 v quiescent current i q v in = 1.2 v, en = active - 6.7 14 a v in = 1.8 v, en = active - 14 24 v in = 2.5 v, en = active - 25 40 v in = 3.6 v, en = active - 40 60 v in = 4.3 v, en = active - 52 75 v in = 5 v, en = active - 71 99 off supply current i q(off) en = inactive, out = open - - 1 off switch current i ds(off) en = inactive, out = gnd - - 1 reverse blocking current i rb v out = 5 v, v in = 1.2 v,v en = inactive --10 on-resistance r ds(on) sc70-6 v in = 1.2 v, i l = 100 ma, t a = 25 c - 105 125 m ? v in = 1.8 v, i l = 100 ma, t a = 25 c - 101 120 v in = 2.5 v, i l = 100 ma, t a = 25 c - 101 120 v in = 3.6 v, i l = 100 ma, t a = 25 c - 101 120 v in = 4.3 v, i l = 100 ma, t a = 25 c - 101 120 v in = 5 v, i l = 100 ma, t a = 25 c - 101 120 tdfn4 1.2 mm x 1.6 mm v in = 1.2 v, i l = 100 ma, t a = 25 c - 66 76 v in = 1.8 v, i l = 100 ma, t a = 25 c - 62 72 v in = 2.5 v, i l = 100 ma, t a = 25 c - 62 72 v in = 3.6 v, i l = 100 ma, t a = 25 c -6272 v in = 4.3 v, i l = 100 ma, t a = 25 c - 62 72 v in = 5 v, i l = 100 ma, t a = 25 c -6272 on-resistance temp.-coefficient tc rds sc70-6 package - 4300 - ppm/c tdfn4 1.2 mm x 1.6 mm package - 3400 - en input low voltage c v il v in = 1.2 v --0.3 v v in = 1.8 v --0.4 d v in = 2.5 v --0.5 d v in = 3.6 v --0.6 d v in = 4.3 v --0.7 d v in = 5 v --0.8 d en input high voltage c v ih v in = 1.2 v 0.9 d -- v in = 1.8 v 1.2 d -- v in = 2.5 v 1.4 d -- v in = 3.6 v 1.6 d -- v in = 4.3 v 1.7 d -- v in = 5 v 1.8 - - en input leakage i sink v en = 5.5 v - 1 - 1 a output pulldown resistance r pd en = inactive, t a = 25 c - 217 280 ? output turn-on delay time t d(on) v in = 3.6 v, r load = 10 ? , t a = 25 c - 140 210 s output turn-on rise time t (on) 80 150 220 output turn-off delay time t d(off) -0.271
www.vishay.com 4 document number: 66710 s11-1694-rev. e, 22-aug-11 vishay siliconix SIP32411 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 pin configuration typical characteristics (internally regulated, 25 c, unless otherwise noted) figure 2 - sc70-6 package out 1 top v ie w g n d 2 e n 3 n /c 6 g n d 5 i n 4 figure 3 - tdfn4 1.2 mm x 1.6 mm package 4 3 1 2 bottom v ie w e n i n out g n d g n d pin description pin number name function sc70-6 tdfn4 43 in this pin is the n-channel mosfet drain connecti on. bypass to ground through a 2.2 f capacitor. 2, 5 2 gnd ground connection 3 4 en enable input 1 1 out this pin is the n-channel mosfet source conne ction. bypass to ground through a 0.1 f capacitor. figure 4 - quiescent current vs. input voltage figure 6 - off supply current vs. input voltage v in (v) i q - quiescent current (a) 0 20 40 60 80 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v in (v) i q(off) - off supply current (na) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 figure 5 - quiescent current vs. temperature figure 7 - off supply current vs. temperature temperature (c) i q - quiescent current (a) 0 10 20 30 40 50 60 70 80 - 40 - 20 0 20 40 60 80 100 v in = 5 v v in = 3.6 v v in = 1.2 v temperature (c) i q(off) - off supply current (na) 0.0001 0.001 0.01 0.1 1 10 100 1000 - 40 - 20 0 20 40 60 80 100 v in = 5 v v in = 3.6 v v in = 1.2 v
document number: 66710 s11-1694-rev. e, 22-aug-11 www.vishay.com 5 vishay siliconix SIP32411 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (internally regulated, 25 c, unless otherwise noted) figure 8 - off switch current vs. input voltage figure 10 - r ds(on) vs. v in for tdfn4 package figure 12 - r ds(on) vs. v in for sc70-6 package v in (v) i ds(off) - off switch current (na) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 60 62 64 66 68 70 72 74 76 v in (v) r ds - on-resistance (m ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 tdfn4 1.2 mm x 1.6 mm package i o = 2 a i o = 1.5 a i o = 0.1 a i o = 1.0 a i o = 0.5 a 85 90 95 100 105 110 115 120 125 130 v in (v) r ds - on-resistance (m ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 sc70-6 package i o = 2 a i o = 1.5 a i o = 0.1 a i o = 0.5 a i o = 1.0 a figure 9 - off switch current vs. temperature figure 11 - r ds(on) vs. temperature for tdfn4 package figure 13 - r ds(on) vs. temperature for sc70-6 package temperature (c) i ds(off) - off switch current (na) 0.001 0.01 0.1 1 10 100 1000 - 40 - 20 0 20 40 60 80 100 v in = 5 v v in = 3.6 v v in = 1.2 v temperature (c) r ds - on-resistance (m ) 45 50 55 60 65 70 75 80 85 - 40 - 20 0 20 40 60 80 100 tdfn4 1.2 mm x 1.6 mm package i o = 0.1 a v in = 5 v temperature (c) r ds - on-resistance (m ) 70 80 90 100 110 120 130 - 40 - 20 0 20 40 60 80 100 sc70-6 package i o = 0.1 a v in = 5 v
www.vishay.com 6 document number: 66710 s11-1694-rev. e, 22-aug-11 vishay siliconix SIP32411 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (internally regulated, 25 c, unless otherwise noted) figure 14 - output pull down vs. input voltage figure 16 - reverse blocking current vs. output voltage figure 18 - turn-on delay time vs. temperature v in (v) r pd - output pulldown resistance ( ) 100 150 200 250 300 350 400 450 500 550 600 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v out = v in v out (v) i in - input current (na) 0.01 0.1 1 10 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v in = 1.2 v v en = 0 v 80 85 90 95 100 105 110 115 120 temperature (c) t d(on) - turn-on delay time (s) - 40 - 20 0 20 40 60 80 100 v in = 5 v c l = 0.1 f r l = 10 temperature (c) r pd - output pulldown resistance ( ) 160 180 200 220 240 260 280 300 - 40 - 20 0 20 40 60 80 100 v out = v in = 5 v v in (v) en threshold voltage (v) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ih v il temperature (c) t (on) - rise switching time (s) - 40 - 20 0 20 40 60 80 100 v in = 5 v c l = 0.1 f r l = 10 130 140 150 160 170 180 190 200
SIP32411 vishay siliconix document number: 66710 s11-1694-rev. e, 22-aug-11 www.vishay.com 7 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (internally regulated, 25 c, unless otherwise noted) typical waveforms figure 20 - turn-off delay time vs. temperature 0.10 0.12 0.14 0.16 0.18 0.20 0.22 temperature (c) t d(off) - turn-off delay time (s) - 40 - 20 0 20 40 60 80 100 v in = 5 v c l = 0.1 f r l = 10
www.vishay.com 8 document number: 66710 s11-1694-rev. e, 22-aug-11 vishay siliconix SIP32411 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 block diagram pcb layout figure 25 - functional block diagram control logic t u rn-on sle w rate control g n d e n out i n re v erse blocking + - charge p u mp top bottom figure 26 - pcb layout for tdfn4 1.2 mm x 1.6 mm (board size: 1 inch x 1 inch) top bottom figure 27 - pcb layout for sc70-6 (board size: 1 inch x 1 inch)
SIP32411 vishay siliconix document number: 66710 s11-1694-rev. e, 22-aug-11 www.vishay.com 9 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 detailed description SIP32411 is an n-channel power mosfet designed as high side load switch with slew rate control to prevent in-rush current. once enable the device charge pumps the gate of the power mosfet to 5 v gate to source voltage while controlling the slew rate of the turn on time. the mostly constant gate to source volt age keeps the on resistance low through out the input voltage range. when disable, the output discharge circuit turns on to help pull the output voltage to ground more quickly. also in disable mode, the reverse blocking circuit is activated to prevent current from going back to the input in case the output voltage is higher than the input voltage. input vo ltage is needed for the reverse blocking circuit to work properly, it can be as low as v in(min) . application information input capacitor while a bypass capacitor on the input is not required, a 2.2 f or larger capacitor for c in is recommended in almost all applications. the bypass capacitor should be placed as physically close as possible to the SIP32411 to be effective in minimizing transients on the input. ceramic capacitors are recommended over tantalum be cause of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. output capacitor a 0.1 f capacitor or larger across v out and gnd is recommended to insure proper slew operation. c out may be increased without limit to accommodate any load transient condition with only minimal affect on the SIP32411 turn on slew rate time. there are no esr or capacitor type requirement. enable the en pin is compatible with both ttl and cmos logic voltage levels. protection against reverse voltage condition the SIP32411 contains a reverse blocking circuitry to protect the current from going to the input from the output in case where the output voltage is higher than the input voltage when the main switch is off. a supply voltage as low as the minimum required input voltage is necessary for this circuitry to work properly. thermal considerations the SIP32411 is designed to maintain a constant output load current. due to physical limitations of the layout and assembly of the device the ma ximum switch current is 1.8 a for sc70-6 package and 2.4 a for tdfn4 package, as stated in the absolute maximum ratings table. however, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. to obtain the highest power dissipation (and a thermal resistance of 240 c/w for sc70-6 and 170 c/w for tdfn4) the power pad of the device should be connected to a heat sink on the printed circuit board. the maximum power dissipation in any application is dependant on the maximum junction temperature, t j(max) = 125 c, the junction-to-ambient thermal resistance for the tdfn4 1.2 mm x 1.6 mm package, ? j-a = 170 c/w, and the ambient temperature, t a , which may be formulaically expressed as: it then follows that, assuming an ambient temperature of 70 c, the maximum power dissipation will be limited to about 324 mw. so long as the load current is below the 2.4 a limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the r ds(on) at the ambient temperature. as an example let us calculate the worst case maximum load current at t a = 70 c. the worst case r ds(on) at 25 c occurs at an input voltage of 1.2 v and is equal to 75 m ? . the r ds(on ) at 70 c can be extrapolated from this data using the following formula: r ds(on) (at 70 c) = r ds(on) (at 25 c) x (1 + t c x ? t) where t c is 3400 ppm/c. continuing with the calculation we have r ds(on) (at 70 c) = 75 m ? x (1 + 0.0034 x (70 c - 25 c)) = 86.5 m ? the maximum current limit is then determined by which in case is 1.94 a. under the stated input voltage condition, if the 1.94 a current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66710 . 170 125 (max.) (max.) a a j a j t t t p - = - = - ) ( (max.) (max.) o n ds load r p i <
document number: 65734 www.vishay.com revision: 08-feb-10 1 package information vishay siliconix tdfn4 1.2 x 1.6 case outline dim. millimeters inches min. nom. max. min. nom. max. a 0.50 0.55 0.60 0.020 0.022 0.024 a1 0.00 - 0.05 0.00 - 0.002 a3 0.15 ref 0.006 b 0.20 0.25 0.30 0.008 0.010 0.012 d 1.15 1.20 1.25 0.045 0.047 0.049 d2 0.81 0.86 0.91 0.032 0.034 0.036 e 0.50 bsc 0.020 e 1.55 1.60 1.65 0.061 0.063 0.065 e2 0.45 0.50 0.55 0.018 0.020 0.022 k 0.20 - - 0.008 - - l 0.30 0.35 0.40 0.012 0.014 0.016 ecn: c10-0043-rev. a, 08-feb-10 dwg: 5995 top view bottom view s ide view pin #1 id (optional) index area (d/2 x e/2) 21 4 3 3 4 12 d e a a1 b e l a3 e2 d2 k
notes: 1. dimensioning and tolerancing per ansi y14.5m-1994. 2. controlling dimensions: millimeters converted to inch dimensions are not necessarily exact. 3. dimension ?d? does not include mold flash, protrusion or gate burr. mold flash, protrusion or gate burr shall not exceed 0.15 mm (0.006 inch) per side. 4. the package top shall be smaller than the package bottom. dimension ?d? and ?e1? are determined at the outer most extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. c 0.15 (0.006) d e b d e1 n5 n4 n3 n1 n2 e e/2 b pin 1 e/1 e1/2 c 0.15 (0.006) c 0.10 (0.004) m a b c c 0.10 (0.004) a c seating plane a1 a2 sectiion a-a base metal (b) b1 c1 c a a detail a see detail a gage plane 0.15 (0.0059) h l u u1 package information vishay siliconix document number: 73201 19-nov-04 www.vishay.com 1 sc-70: 3/4/5/6-leads (pic only) pin lead count pin code 3 4 5 6 n1 ? ? 2 2 n2 2 2 3 3 n3 ? 3 4 4 n4 3 ? ? 5 n5 ? 4 5 6
package information vishay siliconix www.vishay.com 2 document number: 73201 19-nov-04 millimeters inches dim min nom max min nom max a 0.80 ? 1.10 0.031 ? 0.043 a1 0.00 ? 0.10 0.000 ? 0.004 a2 0.80 0.90 1.00 0.031 0.035 0.040 b 0.15 ? 0.30 0.006 ? 0.012 b1 0.15 0.20 0.25 0.006 0.008 0.010 c 0.08 ? 0.25 0.003 ? 0.010 c1 0.08 0.13 0.20 0.003 0.005 0.008 d 1.90 2.10 2.15 0.074 0.082 0.084 e 2.00 2.10 2.20 0.078 0.082 0.086 e 1 1.15 1.25 1.35 0.045 0.050 0.055 e 0.65 bsc 0.0255 bsc e 1 1.30 bsc 0.0512 bsc l 0.26 0.36 0.46 0.010 0.014 0.018 u 0 ? 8 0 ? 8 u1 4 10 4 10 ecn: s-42145?rev. a, 22-nov-04 dwg: 5941
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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