2SB030070MLJY hangzhou?silan?microelectronics?co.,ltd rev:1.0???????2007.10.15 http:?www.silan.com.cn???????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?1 2SB030070MLJY?schottky?barrier?diode?chips description ? ? 2SB030070MLJY?is?a?schottky?barrier?diode?chips fabricated?in?silicon?epitaxial?planar?technology; ? ? low?power?losses,?high?efficiency; ? ? guard?ring?construction?for?transient?protection; ? ? high?esd?capability; ? ? high?surge?capability; ? ? packaged?products?are?widely?used?in?switching power?suppliers,?polarity?protection?circuits?and other?electronic?circuits; ? ? chip?size:300 m m?x?300 m m; ? chip?thickness:?15520 m m chip?topography?and?dimensions la:?chip?size:300 m m; lb:?pad?size:?150 m m; ordering?specifications product?name specification 2SB030070MLJY for?au?and?alsi?wire?bonding ?package absolute?maximum?ratings parameters symbol ratings unit maximum?repetitive?peak?reverse?voltage v rrm 70 v average?forward?rectified?current i fav 70 ma peak?forward?surge?current@8.3ms i fsm 1 a maximum?operation?junction??temperature t j 125 c storage?temperature?range t stg -40~125 c electrical?characteristics (tamb=25 c ) parameters symbol test?conditions min. max. unit reverse?voltage v br i r =8 m a 70 -- v forward?voltage v f i f =1.0ma i f =10ma i f =15ma -- 0.40 0.71 0.95 v reverse?current i r v r =50v v r =70v -- 0.08 8 m a
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