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| inchange semiconductor product specification silicon npn darlington power transistors 2SD2557 description ? with to-3pn package ? darlington applications ? series regulator and general purpose pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i b base current 2 a p c collector power dissipation t c =25 ?? 70 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn darlington power transistors 2SD2557 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 200 v v cesat collector-emitter saturation voltage i c =1a ;i b =5ma 1.5 v i cbo collector cut-off current v cb =200v; i e =0 100 | a i ebo emitter cut-off current v eb =6v; i c =0 5 ma h fe dc current gain i c =1a ; v ce =5v 1500 6500 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 110 pf f t transition frequency i e =0.5a ; v ce =10v 15 mhz inchange semiconductor product specification 3 silicon npn darlington power transistors 2SD2557 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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