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  rev.2.00, jul. 07,.2005, page 1 of 4 ct40km-8h nch igbt for strobe flasher rej03g0286-0200 rev.2.00 jul. 07, 2005 features ? v ces : 400 v ? to-220fn package ? high speed switching outline renesas package code: prss0003ab-a (package name: to-220fn) 3 1 2 1 : gate 2 : collecto r 3 : emitter 1 3 2 applications strobe flashers maximum ratings (tc = 25c) parameter symbol ratings unit conditions collector-emitter voltage v ces 400 v v ge = 0 v gate-emitter voltage v ges 30 v v ce = 0 v, refer to item 4 under notes on the actual specifications peak gate-emitter voltage v gem 40 v v ce = 0 v, tw = 0.5 s collector current (pulse) i cm 200 a c m = 1500 f (see performance curve) maximum power dissipation p c 45 w junction temperature tj ? 40 to +150 c storage temperature tstg ? 40 to +150 c mass ? 2.0 g typical value
ct40km-8h rev.2.00, jul. 07,.2005, page 2 of 4 electrical characteristics (tj = 25c) parameter symbol min. typ. max. unit test conditions collector-emitter breakdown voltage v (br)ces 450 ? ? v i c = 1 ma, v ge = 0 v collector-emitter leakage current i ces ? ? 10 a v ce = 400 v, v ge = 0 v gate-emitter leakage current i ges ? ? 0.1 a v ge = 40 v, v ce = 0 v gate-emitter thre shold voltage v ge(th) ? ? 7.0 v v ce = 10 v, i c = 1 ma performance curves pulse collector current i cm (a) gate-emitter voltage v ge (v) maximum pulse collector current 0 40 80 160 120 200 05 0 10 20 30 40 c m = 1500 f tc = 70c r g = 30 ? single pulse
ct40km-8h rev.2.00, jul. 07,.2005, page 3 of 4 application example r g v ce v cm c m vtrig v g igbt ixe + ? v cm i cp c m v ge 330 v 180 a 1200 f 28 v recommended operation conditions 350 v 200 a 1500 f ? maximum operation conditions vtrig trigger signal v g igbt gate voltage ixe xe tube current precautions on usage 1. gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. and peak reverse gate current during turn-off must become less than 1 a. (in general, when r g(off) = 30 ? , it is satisfied.) 2. igbt has mos structure and its gate is insulated by thin silicon oxide. so please handle carefully to protect the device from electrostatic charge. 3. the operation life should be endured 5,000 shots under the charge current (i xe 200 a : full luminescence condition) of main capacitor (c m = 1500 f) which can endure repeated discharge of 5,000 times. repetition period under full luminescence condition is over 3 seconds. 4. total operation hours applied to the gate-e mitter voltage must be within 5,000 hours.
ct40km-8h rev.2.00, jul. 07,.2005, page 4 of 4 package dimensions ? 2.0g mass[typ.] to-220fn prss0003ab-a renesas code jeita package code package name unit: mm 3.2 0.2 2.8 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 10 0.3 1.1 0.2 6.5 0.3 3 0.3 3.6 0.3 15 0.3 14 0.5 1.1 0.2 4.5 0.2 2.6 0.2 order code lead form standard packing quantity standard order code standard order code example straight type plastic magazine (tube) 50 type name ct40km-8h note : please confirm the specificat ion about the shipping in detail.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> 2-796-3115, fax: <82> 2-796-2145 renesas technology malaysia sdn. bhd. unit 906, block b, menara amcorp, amcorp trade centre, no.18, jalan persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 200 5. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .3.0


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